Local Polarization Reversal by Ion Beam Irradiation in SBN Single Crystals Covered by Dielectric Layer.

Formation of the domain structure by ion beam irradiation was studied in thermally depolarized Ce-doped strontium barium niobate single crystals covered by a dielectric layer. Three types of irradiation regimes were used: dot exposure, stripe exposure, and line exposure. The dependences of the domain size and depth on the irradiated dose were measured. The circular shape of the isolated domains with partially switched broad domain boundary was obtained. Isotropic domain growth was attributed to the step generation at the wall by merging with the residual nanodomains that appeared after thermal depolarization. The obtained linear dose dependence of the switched area was attributed to the screening of the depolarization field by the injected charge. The shape distortion of the domains growing in the neighborhood with already created ones was attributed to the electrostatic interaction of the approaching charged domain walls. The obtained results can be applied for the creation of precise domain patterns with arbitrary orientation and shape to produce nonlinear optical devices with improved characteristics, including electrically tunable diffractive optical elements.

Domain Switching by Electron Beam Irradiation in SBN61:Ce Single Crystals Covered by Dielectric Layer.

The formation of the domain structure by electron beam irradiation in thermally depolarized Ce-doped strontium barium niobate single crystals with free surface and surface covered by a dielectric layer has been studied. The dependences of the domain sizes and domain depth on the irradiated dose have been measured. The circular shape of the isolated domains was obtained. The isotropic domain growth was attributed to step generation at the wall as a result of merging with the residual nanodomains which existed after thermal depolarization. The linear dose dependence of the switched area was attributed to the screening of the depolarization field by the injected charge. The electrostatic interaction of the approaching charged domain walls was revealed. The better quality of the domain patterns was achieved in the samples with electron localization in the dielectric layer. The obtained results can be applied for the creation of precise domain patterns with arbitrary orientation and shape to produce nonlinear optical devices with improved characteristics.