Commercially available jeffamine additives for p-i-n perovskite solar cells.

Commercially available Jeffamines (polyetheramine) with average molecular weights of 2000 and 3000 g mol-1; one (M2005), two (D2000), and three (T3000) primary amino groups end-capping on the polyether backbone; and propylene oxide (PO) and ethylene oxide (EO) functionality were explored as additives for application in MAPbI3 perovskite solar cells (PSCs). The results indicated that the embedding of Jeffamine additives effectively passivates the defects in the grain boundaries of perovskite through the coordination bonding between the nitrogen atom and the uncoordinated lead ion of perovskite. We fabricated p-i-n PSC devices with the structure of glass/indium tin oxide (ITO)/NiOx/CH3NH3PbI3 (with and without Jeffamine)/PC61BM/BCP/Ag. We observed the interaction between the Jeffamine and perovskites. This interaction led to increased lifetimes of the carriers of perovskite, which enabled the construction of high-performance p-i-n PSCs. For the Jeffamine-D2000-derived device, we observed an increase in the power conversion efficiency from 14.5% to 16.8% relative to the control device. Furthermore, the mechanical properties of the perovskite films were studied. The interaction between the additive and perovskite reinforced the flexibility of the thin film, which may pave the way for stretchable optoelectronics.

Defect Passivation by Amide-Based Hole-Transporting Interfacial Layer Enhanced Perovskite Grain Growth for Efficient p-i-n Perovskite Solar Cells.

In this study, we synthesized four acceptor-donor-acceptor type hole-transporting materials (HTMs) of SY1-SY4 for an HTMs/interfacial layer with carbazole as the core moiety and ester/amide as the acceptor unit. These HTMs contain 4-hexyloxyphenyl substituents on the carbazole N atom, with extended π-conjugation achieved through phenylene and thiophene units at the 3,6-positions of the carbazole. When using amide-based HTMs SY2 as a dopant-free HTM in a p-i-n perovskite solar cell (PSC), we achieved a power conversion efficiency (PCE) of 13.59% under AM 1.5G conditions (100 mW cm-2); this PCE was comparable with that obtained when using PEDOT:PSS as the HTM (12.33%). Amide-based SY2 and SY4 HTMs showed a larger perovskite grain than SY1 and SY3 because of the passivation of traps/defects at the grain boundaries and stronger interaction with the perovskite layer. In further investigation, we demonstrated highly efficient and stable PSCs when using the dopant-free p-i-n device structure indium tin oxide/NiOx/interfacial layer (SY-HTMs)/perovskite/PC61BM/BCP/Ag. The interfacial layer improved the PCEs and large grain size (micrometer scale) of the perovskite layer because of defect passivation and interface modification; the amide group exhibited a Lewis base adduct property coordinated to Ni and Pb ions in NiOx and perovskite, bifacial defect passivation and reduced the grain boundaries to improve the crystallinity of the perovskite. The amide-based SY2 exhibited the stronger interaction with the perovskite layer than that of ester-based SY1, which is related to the observations in X-ray absorption near edge structure (XANES). The best performance of the NiOx/SY2 device was characterized by a short-circuit current density (Jsc) of 21.76 mA cm-2, an open-circuit voltage (Voc) of 1.102 V, and a fill factor of 79.1%, corresponding to an overall PCE of 18.96%. The stability test of the PCE of the NiOx/SY2 PSC device PCE showed a decay of only 5.01% after 168 h; it retained 92.01% of its original PCE after 1000 h in Ar atmosphere. Time-resolved photoluminescence spectra of the perovskite films suggested that the hole extraction capabilities of the NiOx/SY-HTMs were better than that of the bare NiOx. The superior film morphologies of the NiOx/SY-HTMs were responsible for the performances of their devices being comparable with those of bare NiOx-based PSCs. The photophysical properties of the HTMs were analyzed through time-dependent density functional theory with the B3LYP functional.

Embedding a Diketopyrrolopyrrole-Based Cross-linking Interfacial Layer Enhances the Performance of Organic Photovoltaics.

In this study, we prepared DPPBTDA, a diketopyrrolopyrrole-based small molecule presenting a terminal cross-linkable azido group, as a cathode modifying layer for organic photovoltaics (OPVs) having the inverted device structure glass/indium tin oxide/zinc oxide (ZnO) with or without the interfacial layer (IFL)/active layer/MoO3/Ag. The active layer comprising a blend of poly[4,8-bis(5-(2-ethylhexyl)thien-2-yl)benzo[1,2- b;4,5- b']dithiophene-2,6-diyl- alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4- b]thiophene)-2-carboxylate-2,6-diyl] (PTB7-Th) as the electron donor and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the electron acceptor. Atomic force microscopy, space-charge-limited current mobility, surface energy, electron spectroscopy for chemical analysis depth profile, ultraviolet photoelectron spectroscopy analysis, and OPV performance data revealed that the surface status of ZnO changed after inserting the DPPBTDA/PCBM hybrid IFL and induced an optimized blend morphology, having a preferred gradient distribution of the conjugated polymer and PC71BM, for efficient carrier transport. The power conversion efficiency (AM 1.5 G, 1000 W m-2) of the device incorporating the hybrid IFL increased to 9.4 ± 0.11% from 8.5 ± 0.15% for the preoptimized PTB7-Th/PCBM device (primarily because of an enhancement in the fill factor from 68.7 ± 1.1 to 72.1 ± 0.8%).

Comprehensive Study on Chemical and Hot Press-Treated Silver Nanowires for Efficient Polymer Solar Cell Application.

In this study, chemical treatment (CT; oxidation⁻reduction method) and physical treatment (HP; hot-pressing methods) were applied to improve the performance of silver nanowire (AgNW)-derived electrodes on a glass or flexible polyethylene terephthalate (PET) substrate. The four-point probe method, UV-Vis spectroscopy and scanning electron microscopy (SEM) were used to measure the properties of AgNW electrodes and compare them with those of indium tin oxide (ITO) electrodes for exploring the possibility of using CT- and HP-based AgNW electrodes for polymer solar cell (PSC) applications. Using the CT or HP method, the sheet resistance of electrodes decreased to lower than 40 Ω sq-1 with an average high transmittance of more than 80%. Furthermore, HP reduced the surface roughness of AgNWs, which solved the inter-electrode short circuiting problem for devices. We studied the performance of poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) and zinc oxide-based PSC devices. The power conversion efficiency of HP-AgNW-derived poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl] (PTB7-Th):[6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) devices was 7.83%, which was slightly lower than the performance of the device using ITO (8.03%) as a substrate. After a bend test (100 times) at a 2-cm curvature radius, the efficiency of AgNW/PET-derived PSCs was more than 70%. The performance of PSCs made with AgNWs and ITO electrodes is comparable, but the cost of using AgNWs for electrodes is much lower; therefore, HP-derived AgNWs demonstrate great potential for optoelectronic applications.