RESUMEN
The properties of Pb1-xMnxTe/CdTe multilayer composite grown by molecular beam epitaxy on a GaAs substrate were studied. The study included morphological characterization by X-ray diffraction, scanning electron microscopy, secondary ion mass spectroscopy, as well as electron transport and optical spectroscopy measurements. The main focus of the study was on the sensing properties of photoresistors made of Pb1-xMnxTe/CdTe in the infrared spectral region. It was shown that the presence of Mn in the Pb1-xMnxTe conductive layers shifted the cut-off wavelength toward blue and weakened the spectral sensitivity of the photoresistors. The first effect was due to an increase in the energy gap of Pb1-xMnxTe with an increase in Mn concentration, and the second was due to a pronounced deterioration in the crystal quality of the multilayers owing to the presence of Mn atoms, as shown by the morphological analysis.
RESUMEN
Quantum dots consisting of an axial Zn0.97Mg0.03Te insertion inside a large-bandgap Zn0.9Mg0.1Te nanowire core are fabricated in a molecular-beam epitaxy system by employing the vapor-liquid-solid growth mechanism. In addition, this structure is coated with a thin ZnSe radial shell that forms a type-II interface with the dot semiconductor. The resulting radial electron-hole separation is evidenced by several distinct effects that occur in the presence of the ZnSe shell, including the optical emission redshift of about 250 meV, a significant decrease in emission intensity, an increase in the excitonic lifetime by one order of magnitude, and an increase in the biexciton binding energy. The type-II nanowire quantum dots where electrons and holes are radially separated constitute a promising platform for potential applications in the field of quantum information technology.
RESUMEN
In a Fe/(Cd,Mg)Te/CdTe quantum well hybrid structure, short-range and long-range ferromagnetic proximity effects are found to coexist. The former is observed for conduction band electrons, while the latter is observed for holes bound to shallow acceptors in the CdTe quantum well. These effects arise from the interaction of charge carriers confined in the quantum well with different ferromagnets, where electrons interact with the Fe film and holes with an interfacial ferromagnet at the Fe/(Cd,Mg)Te interface. The two proximity effects originate from fundamentally different physical mechanisms. The short-range proximity effect for electrons is determined by the overlap of their wave functions with d-electrons of the Fe film. On the contrary, the long-range effect for holes bound to acceptors is not associated with overlapping wave functions and can be mediated by elliptically polarized phonons. The coexistence of the two ferromagnetic proximity effects reveals the presence of a nontrivial spin texture within the same heterostructure.
RESUMEN
We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance limitations of the organic active layer. The dependence of photovoltaic performance enhancement on the morphology of the nanostructure with nanowire diameters 30, 50, 60, 100 and 150 nm was studied in detail. The short circuit current was enhanced by a factor of 4.25, while an open circuit voltage increase by 0.32 volts was achieved compared to similar planar layers.
