Al2O3 Dot and Antidot Array Synthesis in Hexagonally Packed Poly(styrene-block-methyl methacrylate) Nanometer-Thick Films for Nanostructure Fabrication.

Nanostructured organic templates originating from self-assembled block copolymers (BCPs) can be converted into inorganic nanostructures by sequential infiltration synthesis (SIS). This capability is particularly relevant within the framework of advanced lithographic applications because of the exploitation of the BCP-based nanostructures as hard masks. In this work, Al2O3 dot and antidot arrays were synthesized by sequential infiltration of trimethylaluminum and water precursors into perpendicularly oriented cylinder-forming poly(styrene-block-methyl methacrylate) (PS-b-PMMA) BCP thin films. The mechanism governing the effective incorporation of Al2O3 into the PMMA component of the BCP thin films was investigated evaluating the evolution of the lateral and vertical dimensions of Al2O3 dot and antidot arrays as a function of the SIS cycle number. The not-reactive PS component and the PS/PMMA interface in self-assembled PS-b-PMMA thin films result in additional paths for diffusion and supplementary surfaces for sorption of precursor molecules, respectively. Thus, the mass uptake of Al2O3 into the PMMA block of self-assembled PS-b-PMMA thin films is higher than that in pure PMMA thin films.

Improving HfO2-Based Resistive Switching Devices by Inserting a TaOx Thin Film via Engineered In Situ Oxidation.

Resistive switching (RS) devices with binary and analogue operation are expected to play a key role in the hardware implementation of artificial neural networks. However, state of the art RS devices based on binary oxides (e.g., HfO2) still do not exhibit enough competitive performance. In particular, variability and yield still need to be improved to fit industrial requirements. In this study, we fabricate RS devices based on a TaOx/HfO2 bilayer stack, using a novel methodology that consists of the in situ oxidation of a Ta film inside the atomic layer deposition (ALD) chamber in which the HfO2 film is deposited. By means of X-ray reflectivity (XRR) and time-of-flight secondary ion mass spectrometry (ToF-SIMS), we realized that the TaOx film shows a substoichiometric structure, and that the TaOx/HfO2 bilayer stack holds a well-layered structure. An exhaustive electrical characterization of the TaOx/HfO2-based RS devices shows improved switching performance compared to the single-layer HfO2 counterparts. The main advantages are higher forming yield, self-compliant switching, lower switching variability, enhanced reliability, and better synaptic plasticity.

Ozone-Based Sequential Infiltration Synthesis of Al2O3 Nanostructures in Symmetric Block Copolymer.

Sequential infiltration synthesis (SIS) provides an original strategy to grow inorganic materials by infiltrating gaseous precursors in polymeric films. Combined with microphase-separated nanostructures resulting from block copolymer (BCP) self-assembly, SIS selectively binds the precursors to only one domain, mimicking the morphology of the original BCP template. This methodology represents a smart solution for the fabrication of inorganic nanostructures starting from self-assembled BCP thin films, in view of advanced lithographic application and of functional nanostructure synthesis. The SIS process using trimethylaluminum (TMA) and H2O precursors in self-assembled PS-b-PMMA BCP thin films was established as a model system, where the PMMA phase is selectively infiltrated. However, the temperature range allowed by polymeric material restricts the available precursors to highly reactive reagents, such as TMA. In order to extend the SIS methodology and access a wide library of materials, a crucial step is the implementation of processes using reactive reagents that are fully compatible with the initial polymeric template. This work reports a comprehensive morphological (SEM, SE, AFM) and physicochemical (XPS) investigation of alumina nanostructures synthesized by means of a SIS process using O3 as oxygen precursor in self-assembled PS-b-PMMA thin films with lamellar morphology. The comparison with the H2O-based SIS process validates the possibility to use O3 as oxygen precursor, expanding the possible range of precursors for the fabrication of inorganic nanostructures.

Phase stabilization of Al:HfO2 grown on In(x)Ga(1-x)As substrates (x = 0, 0.15, 0.53) via trimethylaluminum-based atomic layer deposition.

Al:HfO2 is grown on III-V compound substrates by atomic layer deposition after an in situ trimethylaluminum-based preconditioning treatment of the III-V surface. After post-deposition rapid thermal annealing at 700 °C, the cubic/tetragonal crystalline phase is stabilized and the chemical composition of the stack is preserved. The observed structural evolution of Al:HfO2 on preconditioned III-V substrates shows that the in-diffusion of semiconductor species from the substrate through the oxide is inhibited. Al-induced stabilization of the Al:HfO2 crystal polymorphs up to 700 °C can be used as a permittivity booster methodology with possibly important implications in the stack scaling issues of high-mobility III-V based logic applications.

Design, fabrication and characterization of a capacitive micromachined ultrasonic probe for medical imaging.

In this paper we report the design, fabrication process, and characterization of a 64-elements capacitive micromachined ultrasonic transducer (cMUT), 3 MHz center frequency, 100% fractional bandwidth. Using this transducer, we developed a linear probe for application in medical echographic imaging. The probe was fully characterized and tested with a commercial echographic scanner to obtain first images from phantoms and in vivo human body. The results, which quickly follow similar results obtained by other researchers, clearly show the great potentiality of this new emerging technology. The cMUT probe works better than the standard piezoelectric probe as far as the axial resolution is concerned, but it suffers from low sensitivity. At present this can be a limit, especially for in depth operation. But we are strongly confident that significant improvements can be obtained in the very near future to overcome this limitation, with a better transducer design, the use of an acoustic lens, and using well matched, front-end electronics between the transducer and the echographic system.