Exceptional Hydrogen Uptake in Crystalline InxGa1-xN Semiconductors.

The irradiation of InN and InxGa1-xN samples with low-energy H ions results in exceptionally high hydrogen uptake in a crystalline semiconductor. This phenomenon is attributed to specific In-H complex formation. By exploiting spectral fingerprints of the In-H complexes observable in In L3-edge X-ray absorption spectroscopy, we provide direct evidence of complex formation. Density functional theory calculations assist in interpreting the X-ray absorption spectra and offer insights into the energetics of complex formation. We quantify the total amount of reversibly incorporated hydrogen in these semiconductors and discuss their strengths and weaknesses as innovative materials for hydrogen storage.

Quantitative in situ synchrotron X-ray analysis of the ALD/MLD growth of transition metal dichalcogenide TiS2 ultrathin films.

We present the results of a full quantitative analysis of X-ray absorption spectroscopy (XAS) performed in situ during the growth of ultrathin titanium disulfide (TiS2) films via an innovative two-step process, i.e. atomic layer deposition/molecular layer deposition (ALD/MLD) followed by annealing. This growth strategy aims at separating the growth process from the crystallization process by first creating an amorphous Ti-thiolate that is converted later to crystalline TiS2via thermal annealing. The simultaneous analysis of Ti and S K-edge XAS spectra, exploiting the insights from density functional theory calculations, allows us to shed light on the chemical and structural mechanisms underlying the main steps of growth. The nature of the bonding at the base of the interface creation with the SiO2 substrate is disclosed in this study. Evidence of a progressive incorporation of S in the amorphous Ti-thiolate is given. Finally, it is shown that the annealing step plays a critical role since the transformation of the Ti-thiolate into nanocrystalline TiS2 and the loss of S are simultaneously induced, validating the two-step synthesis approach, which entails distinct growth and crystallization steps. These observations contribute to a deeper understanding of the bonding mechanism at the interface and provide insights for future research in this field and the generation of ultra-thin layered materials.

Opportunities and new developments for the study of surfaces and interfaces in soft condensed matter at the SIRIUS beamline of Synchrotron SOLEIL.

The SIRIUS beamline of Synchrotron SOLEIL is dedicated to X-ray scattering and spectroscopy of surfaces and interfaces, covering the tender to mid-hard X-ray range (1.1-13 keV). The beamline has hosted a wide range of experiments in the field of soft interfaces and beyond, providing various grazing-incidence techniques such as diffraction and wide-angle scattering (GIXD/GIWAXS), small-angle scattering (GISAXS) and X-ray fluorescence in total reflection (TXRF). SIRIUS also offers specific sample environments tailored for in situ complementary experiments on solid and liquid surfaces. Recently, the beamline has added compound refractive lenses associated with a transfocator, allowing for the X-ray beam to be focused down to 10 µm × 10 µm while maintaining a reasonable flux on the sample. This new feature opens up new possibilities for faster GIXD measurements at the liquid-air interface and for measurements on samples with narrow geometries.

Retention of surface structure causes lower density in atomic layer deposition of amorphous titanium oxide thin films.

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film's structure and properties are strongly dependent on its thickness, but here, besides the significant change in the density of the films there is also a change in their chemical state. The thin near-surface layer contained a significantly larger amount of Ti+3 species and oxygen vacancies relative to the sample's bulk. We attribute this change in chemistry to the ALD specific deposition process wherein each different atomic species is deposited in turn, thereby forming a "corundum-like" structure of the near-surface layer resembling that found in the Al2O3 system. This, combined with the fact that each deposited layer starts out as a surface layer and maintains the surface structure over the next several following deposition cycles, is responsible for the overall decrease in the film density. This is the first time this effect has been shown in detail for TiO2, expending the previously discovered phenomenon to a new system and demonstrating that while similar effects occur, they can present in different ways for oxide systems with different structures and symmetries.

Unravelling the local crystallographic structure of ferromagnetic [Formula: see text]-[Formula: see text]N nanocrystals embedded in GaN.

In the Fe-doped GaN phase-separated magnetic semiconductor Ga[Formula: see text]FeN, the presence of embedded [Formula: see text]-[Formula: see text]N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous X-ray diffraction and diffraction anomalous fine structure, the local structure of Ga in self-assembled face-centered cubic (fcc) [Formula: see text]-[Formula: see text]N nanocrystals embedded in wurtzite GaN thin layers is investigated in order to shed light onto the correlation between fabrication parameters, local structural arrangement and overall magnetic properties of the material system. It is found, that by adjusting the growth parameters and thus, the crystallographic surroundings, the Ga atoms can be induced to incorporate into 3c positions at the faces of the fcc crystal lattice, reaching a maximum occupancy of 30%. The magnetic response of the embedded nanocrystals is ferromagnetic with Curie temperature increasing from 450 to 500 K with the Ga occupation. These results demonstrate the outstanding potential of the employed experimental protocol for unravelling the local structure of magnetic multi-phase systems, even when embedded in a matrix containing the same element under investigation.

Surface reconstruction causes structural variations in nanometric amorphous Al2O3.

The physical properties of nanocrystalline materials are known to be size dependent, owing to surface effects. Theoretically, a similar effect should also exist in amorphous materials. To examine this possibility, we carried out a study in which amorphous thin films of aluminum oxide were produced by atomic layer deposition (ALD) and studied by X-ray Absorption Near Edge Structure Spectroscopy (XANES) in grazing incidence geometry, as a function of the grazing angle. This allowed us to probe the Al local environment as a function of depth from the surface. The fraction of Al6 sites was found to be substantially lower at the surface than deeper in the film, meaning that the surface is relatively rich in Al4 sites. These results are in line with previous theoretical and experimental findings, shed further light on the structure and properties of amorphous nanometric materials and indeed indicate that size effects exist in amorphous nanometric materials.

The initial stages of ZnO atomic layer deposition on atomically flat In0.53Ga0.47As substrates.

InGaAs is one of the III-V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal-semiconductor junction. A key consideration in many modern devices is the atomic structure of the hetero-interface, which often ultimately governs the electronic or chemical process of interest. Here, a complementary suite of in situ synchrotron X-ray techniques (fluorescence, reflectivity and absorption) as well as modeling is used to investigate both structural and chemical evolution during the initial growth of ZnO by atomic layer deposition (ALD) on In0.53Ga0.47As substrates. Prior to steady-state growth behavior, we discover a transient regime characterized by two stages. First, substrate-inhibited ZnO growth takes place on InGaAs terraces. This leads eventually to the formation of a 1 nm-thick, two-dimensional (2D) amorphous layer. Second, the growth behavior and its modeling suggest the occurrence of dense island formation, with an aspect ratio and surface roughness that depends sensitively on the growth condition. Finally, ZnO ALD on In0.53Ga0.47As is characterized by 2D steady-state growth with a linear growth rate of 0.21 nm cy-1, as expected for layer-by-layer ZnO ALD.

Rotating sample holder at low temperature.

A low temperature rotary device (cryoturbine) for use in extended x-ray-absorption fine structure measurements in fluorescence mode has been designed and manufactured. The instrument works at a temperature close to liquid Nitrogen and can reach frequencies up to 100 Hz with good stability. The rotation speed is measured with a light-emitting diode driven in stroboscopic mode by a simple electronic circuit.

Treatment of EXAFS data taken in the fluorescence mode in non-linear conditions.

The aim of this work is to investigate the possibility of extracting correct structural parameters from fluorescence EXAFS data taken at high count rates with an energy-resolving detector. This situation is often encountered on third-generation synchrotron radiation sources which provide a high flux on the sample. Errors caused by pulse pile-up in the extraction of structural information have been quantified in a real experiment, and different approaches to the problem of data correction have been elaborated. The different approaches are discussed in a comparison of the ability of each kind of correction to recover the correct structural parameters. The result of our analysis is that it is possible to work in non-linear conditions and correct the data, if the response of the acquisition system is known. Reliable structural information can be obtained with data acquired up to a count rate equal to approximately 60% of the inverse of the dead time.