Robust and High-Performance Machine Vision System for Automatic Quality Inspection in Assembly Processes.

This paper addresses the problem of automatic quality inspection in assembly processes by discussing the design of a computer vision system realized by means of a heterogeneous multiprocessor system-on-chip. Such an approach was applied to a real catalytic converter assembly process, to detect planar, translational, and rotational shifts of the flanges welded on the central body. The manufacturing line imposed tight time and room constraints. The image processing method and the features extraction algorithm, based on a specific geometrical model, are described and validated. The algorithm was developed to be highly modular, thus suitable to be implemented by adopting a hardware-software co-design strategy. The most timing consuming computational steps were identified and then implemented by dedicated hardware accelerators. The entire system was implemented on a Xilinx Zynq heterogeneous system-on-chip by using a hardware-software (HW-SW) co-design approach. The system is able to detect planar and rotational shifts of welded flanges, with respect to the ideal positions, with a maximum error lower than one millimeter and one sexagesimal degree, respectively. Remarkably, the proposed HW-SW approach achieves a 23× speed-up compared to the pure software solution running on the Zynq embedded processing system. Therefore, it allows an in-line automatic quality inspection to be performed without affecting the production time of the existing manufacturing process.

Temperature dependence of the thermo-optic coefficient in 4H-SiC and GaN slabs at the wavelength of 1550 nm.

The refractive index and its variation with temperature, i.e. the thermo-optic coefficient, are basic optical parameters for all those semiconductors that are used in the fabrication of linear and non-linear opto-electronic devices and systems. Recently, 4H single-crystal silicon carbide (4H-SiC) and gallium nitride (GaN) have emerged as excellent building materials for high power and high-temperature electronics, and wide parallel applications in photonics can be consequently forecasted in the near future, in particular in the infrared telecommunication band of λ = 1500-1600 nm. In this paper, the thermo-optic coefficient (dn/dT) is experimentally measured in 4H-SiC and GaN substrates, from room temperature to 480 K, at the wavelength of 1550 nm. Specifically, the substrates, forming natural Fabry-Perot etalons, are exploited within a simple hybrid fiber free-space optical interferometric system to take accurate measurements of the transmitted optical power in the said temperature range. It is found that, for both semiconductors, dn/dT is itself remarkably temperature-dependent, in particular quadratically for GaN and almost linearly for 4H-SiC.

Thermo-optic design for microwave and millimeter-wave electromagnetic power microsensors.

Rendina et al. recently proposed the original configuration of an electromagnetic power sensor for microwaves and millimeter waves that is based on an optically interrogated all-silicon chip [Electron. Lett. 35, 1748 (1999)]. Here we theoretically analyze and discuss in detail the performances of such a new class of nonperturbing and wideband probe in terms of sensitivity, resolution, intrinsic detectivity, linearity, and response time. Good agreement between theory and experiments is demonstrated. In particular, minimum resolutions of approximately 1 mW/cm2 are obtained at frequencies beyond 10 GHz. The dependence of response on the geometrical and electromagnetic parameters of the sensing element is analyzed, and on this basis the possibility of achieving optimized configurations is discussed.