RESUMEN
Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of nonvolatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their applications. Hexagonal boron nitride (hBN) is a wide-energy-bandgap semiconductor, showing immense potential as a platform for low-dimensional device heterostructures. It is an inert dielectric used for gated devices, having a negligible orbital hybridization when placed in contact with other systems. Despite its inertness, we discover a large electron mass enhancement in few-layer hBN affecting the lifetime of the π-band states. We show that the renormalization is phonon-mediated and consistent with both single- and multiple-phonon scattering events. Our findings thus unveil a so-far unknown many-body state in a wide-bandgap insulator, having important implications for devices using hBN as one of their building blocks.
RESUMEN
The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report µm scale, few-layer graphene structures formed at moderate temperatures (600-700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.
RESUMEN
An optical, electronic and structural characterisation of three natural dyes potentially interesting for application in organic solar cells, curcumin (C21H20O6), bixin (C25H30O4) and indigo (C16H10N2O2), was performed. X-Ray Diffraction (XRD) measurements, showed that curcumin has a higher degree of crystallinity compared to bixin and indigo. The results from the Pawley unit cell refinements for all dyes are reported. Optical absorption spectra measured by UV-Visible Spectroscopy (UV-Vis) on thermally evaporated films revealed that bixin undergoes chemical degradation upon evaporation, while curcumin and indigo appear to remain unaffected by this process. Combined Ultraviolet Photoemission Spectroscopy (UPS) and Inverse Photoemission Spectroscopy (IPES) spectra measured on the dyes revealed that all of them are hole-conducting materials and allowed for the determination of their electronic bandgaps, and Fermi level position within the gap. UV Photo-Emission Electron Microscopy (PEEM) revealed the workfunction of the dye materials and indicated that indigo has a negative electron affinity. PEEM was also used to study degradation by UV irradiation and showed that they are quite robust to UV exposure.
RESUMEN
4-probe electrical measurements have been in existence for many decades. One of the most useful aspects of the 4-probe method is that it is not only possible to find the resistivity of a sample (independently of the contact resistances), but that it is also possible to probe the dimensionality of the sample. In theory, this is straightforward to achieve by measuring the 4-probe resistance as a function of probe separation. In practice, it is challenging to move all four probes with sufficient precision over the necessary range. Here, we present an alternative approach. We demonstrate that the dimensionality of the conductive path within a sample can be directly probed using a modified 4-probe method in which an unconventional geometry is exploited; three of the probes are rigidly fixed, and the position of only one probe is changed. This allows 2D and 3D (and other) contributions the to resistivity to be readily disentangled. The required experimental instrumentation can be vastly simplified relative to traditional variable spacing 4-probe instruments.
RESUMEN
We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.
RESUMEN
Nanoscale topographies and chemical patterns can be used as synthetic cell interfaces with a range of applications including the study and control of cellular processes. Herein, we describe the fabrication of high aspect ratio nanostructures using electron beam lithography in the epoxy-based polymer SU-8. We show how nanostructure geometry, position and fluorescence properties can be tuned, allowing flexible device design. Further, thiol-epoxide reactions were developed to give effective and specific modification of SU-8 surface chemistry. SU-8 nanostructures were made directly on glass cover slips, enabling the use of high resolution optical techniques such as live-cell confocal, total internal reflection and 3D structured illumination microscopy to investigate cell interactions with the nanostructures. Details of cell adherence and spreading, plasma membrane conformation and actin organization in response to high aspect ratio nanopillars and nanolines were investigated. The versatile structural and chemical properties combined with the high resolution cell imaging capabilities of this system are an important step towards the better understanding and control of cell interactions with nanomaterials.
