RESUMEN
High resolution electron backscatter diffraction (HREBSD), an SEM-based diffraction technique, may be used to measure the lattice distortion of a crystalline material and to infer the geometrically necessary dislocation content. Uncertainty in the image correlation process used to compare diffraction patterns leads to an uneven distribution of measurement noise in terms of the lattice distortion, which results in erroneous identification of dislocation type and density. This work presents a method of reducing noise in HREBSD dislocation measurements by removing the effect of the most problematic components of the measured distortion. The method is then validated by comparing with TEM analysis of dislocation pile-ups near a twin boundary in austenitic stainless steel and with ECCI analysis near a nano-indentation on a tantalum oligocrystal. The HREBSD dislocation microscopy technique is able to resolve individual dislocations visible in TEM and ECCI and correctly identify their Burgers vectors.
RESUMEN
An approach for producing ultrahigh spatial resolution selected area electron channeling patterns (UHR-SACPs) using the FEI/Thermo Elstar electron column is presented. The approach uses free lens control to directly assign lens and deflector values to rock the beam about precise points on the sample surface and generate the UHR-SACPs. Modification of the lens parameters is done using a service application that is preinstalled on the microscope or using the iFast scripting interface to run a short program to assign lens and deflector currents. Using the approach outlined here, the UHR-SACPs are collected at normal instrument scanning rates and pixel densities, resulting in rapid collection times and sharp patterns with simple push button changes in instrument mode. UHR-SACPs with spatial resolutions of 300 nm with angular ranges of 20° are demonstrated, as are patterns approaching 125 nm spatial resolution with angular ranges of 4°. Such spatial resolution/angular range combinations are significantly better than any reported previously. This approach for rapidly collecting high accuracy crystallographic information greatly enhances the ability to carry out electron channeling contrast imaging (ECCI) for a broad range of materials applications.
RESUMEN
Collection of selected area channeling patterns (SACPs) on a high resolution FEG-SEM is essential to carry out quantitative electron channeling contrast imaging (ECCI) studies, as it facilitates accurate determination of the crystal plane normal with respect to the incident beam direction and thus allows control the electron channeling conditions. Unfortunately commercial SACP modes developed in the past were limited in spatial resolution and are often no longer offered. In this contribution we present a novel approach for collecting high resolution SACPs (HR-SACPs) developed on a Gemini column. This HR-SACP technique combines the first demonstrated sub-micron spatial resolution with high angular accuracy of about 0.1°, at a convenient working distance of 10mm. This innovative approach integrates the use of aperture alignment coils to rock the beam with a digitally calibrated beam shift procedure to ensure the rocking beam is maintained on a point of interest. Moreover a new methodology to accurately measure SACP spatial resolution is proposed. While column considerations limit the rocking angle to 4°, this range is adequate to index the HR-SACP in conjunction with the pattern simulated from the approximate orientation deduced by EBSD. This new technique facilitates Accurate ECCI (A-ECCI) studies from very fine grained and/or highly strained materials. It offers also new insights for developing HR-SACP modes on new generation high-resolution electron columns.
RESUMEN
In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a focused ion beam system. A coherent interface between the zinc-blende and wurtzite phases is identified. A mechanism for catalyst-free vapor-solid multiphase nanowire nucleation and growth is proposed.
RESUMEN
We report the formation of silicon and carbon hetero-nanostructures in an inductively coupled plasma system by a simultaneous growth/etching mechanism. Multi-walled carbon nanotubes were grown during one, three and five hour depositions, while tapered silicon nanowires were progressively etched. The carbon and silicon nanostructures and the interfaces between them were studied by electron microscopies and micro Raman spectroscopies. The potential of this method for large-scale controlled production of nano heterostructures without the requirement of a common catalyst is explored.