RESUMEN
We use circular dichroism (CD) in time- and angle-resolved photoemission spectroscopy (trARPES) to measure the femtosecond charge dynamics in the topological insulator (TI) [Formula: see text]. We detect clear CD signatures from topological surface states (TSS) and surface resonance (SR) states. In time-resolved measurements, independently from the pump polarization or intensity, the CD shows a dynamics which provides access to the unexplored electronic evolution in unoccupied states of [Formula: see text]. In particular, we are able to disentangle the unpolarized electron dynamics in the bulk states from the spin-textured TSS and SR states on the femtosecond timescale. Our study demonstrates that photoexcitation mainly involves the bulk states and is followed by sub-picosecond transport to the surface. This provides essential details on intra- and interband scattering in the relaxation process of TSS and SR states. Our results reveal the significant role of SRs in the subtle ultrafast interaction between bulk and surface states of TIs.
RESUMEN
Epitaxial films of high critical temperature ( T c ) cuprate superconductors preserve their transport properties even when their thickness is reduced to a few nanometers. However, when approaching the single crystalline unit cell (u.c.) of thickness, T c decreases and eventually, superconductivity is lost. Strain originating from the mismatch with the substrate, electronic reconstruction at the interface and alteration of the chemical composition and of doping can be the cause of such changes. Here, we use resonant inelastic x-ray scattering at the Cu L 3 edge to study the crystal field and spin excitations of NdBa 2 Cu 3 O 7 - x ultrathin films grown on SrTiO 3 , comparing 1, 2 and 80 u.c.-thick samples. We find that even at extremely low thicknesses, the strength of the in-plane superexchange interaction is mostly preserved, with just a slight decrease in the 1 u.c. with respect to the 80 u.c.-thick sample. We also observe spectroscopic signatures for a decrease of the hole-doping at low thickness, consistent with the expansion of the c-axis lattice parameter and oxygen deficiency in the chains of the first unit cell, determined by high-resolution transmission microscopy and x-ray diffraction.
RESUMEN
Intermediate valence is one of the typical phenomena of systems with strong electronic correlation. The Anderson impurity model predicts a scaling of the valence with the reduced temperature T/T(K), which is difficult to observe by traditional surface-sensitive electronic spectroscopies. This paper presents results obtained by resonant inelastic X-ray scattering (RIXS), a bulk-sensitive configuration- and chemical-specific technique. The temperature dependence of the valence of YbInCu(4) and YbAgCu(4) was measured by tuning the incident energy to the resonance of the Yb(2+) spectral component. In the case of YbInCu(4) a sharp valence transition, as known from thermodynamical measurements, has been found. The valence of YbAgCu(4) reveals a smooth dependence consistent with a Kondo temperature T(K) = 70 K. These findings establish RIXS as a powerful tool for measuring bulk electronic properties of solids.