RESUMEN
To achieve the full potential of monolithic perovskite/silicon tandem solar cells, crystal defects and film inhomogeneities in the perovskite top cell must be minimized. We discuss the use of methylenediammonium dichloride as an additive to the perovskite precursor solution, resulting in the incorporation of in situ-formed tetrahydrotriazinium (THTZ-H+) into the perovskite lattice upon film crystallization. The cyclic nature of the THTZ-H+ cation enables a strong interaction with the lead octahedra of the perovskite lattice through the formation of hydrogen bonds with iodide in multiple directions. This structure improves the device power conversion efficiency (PCE) and phase stability of 1.68 electron volts perovskites under prolonged light and heat exposure under 1-sun illumination at 85°C. Monolithic perovskite/silicon tandems incorporating THTZ-H+ in the perovskite photo absorber reached a 33.7% independently certified PCE for a device area of 1 square centimeter.
RESUMEN
Defects at the top and bottom interfaces of three-dimensional (3D) perovskite photoabsorbers diminish the performance and operational stability of perovskite solar cells owing to charge recombination, ion migration and electric-field inhomogeneities1-5. Here we demonstrate that long alkyl amine ligands can generate near-phase-pure 2D perovskites at the top and bottom 3D perovskite interfaces and effectively resolve these issues. At the rear-contact side, we find that the alkyl amine ligand strengthens the interactions with the substrate through acid-base reactions with the phosphonic acid group from the organic hole-transporting self-assembled monolayer molecule, thus regulating the 2D perovskite formation. With this, inverted perovskite solar cells with double-side 2D/3D heterojunctions achieved a power conversion efficiency of 25.6% (certified 25.0%), retaining 95% of their initial power conversion efficiency after 1,000 h of 1-sun illumination at 85 °C in air.
RESUMEN
Carbazole-based self-assembled monolayers (PACz-SAMs), anchored via their phosphonic acid group on a transparent conductive oxide (TCO), have demonstrated excellent performance as hole-selective layers in perovskite/silicon tandem solar cells. Yet, whereas different PACz-SAMs have been explored, the role of the TCO, and specifically its microstructure, on the hole transport properties of the TCO/PACz-SAMs stack has been largely overlooked. Here, we demonstrate that the TCO microstructure directly impacts the work function (WF) shift after SAM anchoring and is responsible for WF variations at the micro/nanoscale. Specifically, we studied Sn-doped In2O3 (ITO) substrates with amorphous and polycrystalline (featuring either nanoscale- or microscale-sized grains) microstructures before and after 2PACz-SAMs and NiOx/2PACz-SAMs anchoring. With this, we established a direct correlation between the ITO crystal grain orientation and 2PACz-SAMs local potential distribution, i.e., the WF. Importantly, these variations vanish for amorphous oxides (either in the form of amorphous ITO or when adding an amorphous NiOx buffer layer), where a homogeneous surface potential distribution is found. These findings highlight the importance of TCO microstructure tuning, to enable both high mobility and broadband transparent electrodes while ensuring uniform WF distribution upon application of hole transport SAMs, both critical for enhanced device performance.
RESUMEN
Thermally evaporated C60 is a near-ubiquitous electron transport layer in state-of-the-art p-i-n perovskite-based solar cells. As perovskite photovoltaic technologies are moving toward industrialization, batch-to-batch reproducibility of device performances becomes crucial. Here, we show that commercial as-received (99.75% pure) C60 source materials may coalesce during repeated thermal evaporation processes, jeopardizing such reproducibility. We find that the coalescence is due to oxygen present in the initial source powder and leads to the formation of deep states within the perovskite bandgap, resulting in a systematic decrease in solar cell performance. However, further purification (through sublimation) of the C60 to 99.95% before evaporation is found to hinder coalescence, with the associated solar cell performances being fully reproducible after repeated processing. We verify the universality of this behavior on perovskite/silicon tandem solar cells by demonstrating their open-circuit voltages and fill factors to remain at 1950 mV and 81% respectively, over eight repeated processes using the same sublimed C60 source material. Notably, one of these cells achieved a certified power conversion efficiency of 30.9%. These findings provide insights crucial for the advancement of perovskite photovoltaic technologies towards scaled production with high process yield.