RESUMEN
The Ag x O thin film with various oxygen flow ratios (R[O2]%) deposited by radio frequency magnetron sputtering (RFM-SPT) has been studied. While adjusting R[O2]% from 0% to 30%, the Ag x O thin film transitioned from metal to semiconductor and/or insulator with different transparent appearances on the surface observed using X-ray diffraction (XRD) and transmittance measurement. At high oxygen flow ratios, the Ag x O film is multi-phased as a mixture of Ag(II)O and Ag2 (III)O3. In addition, the work function (Ï) of those samples changes from 4.7 eV to 5.6 eV as measured by photoelectron yield spectroscopy (PYS). The compositional and chemical state changes that occur at the Ag x O surface during the increments of R[O2]% are evaluated by the relative peak intensities and binding energy shifts in X-ray photoelectron spectroscopy (XPS). With the incorporation of more electrons in chemical bonding, the oxygen-induced band forms. And combining all the results from transmittance (band gap confirmation), PYS (work function confirmation), and XPS (valence band position confirmation), the estimated band diagrams are given for the oxidation state of Ag x O with various oxygen flow ratios.
RESUMEN
α-Ga2O3 films were grown on a c-plane sapphire substrate by HCl-supported mist chemical vapor deposition with multiple solution chambers, and the effect of HCl support on α-Ga2O3 film quality was investigated. The growth rate monotonically increased with increasing Ga supply rate. However, as the Ga supply rate was higher than 0.1 mmol/min, the growth rate further increased with increasing HCl supply rate. The surface roughness was improved by HCl support when the Ga supply rate was smaller than 0.07 mmol/min. The crystallinity of the α-Ga2O3 films exhibited an improvement with an increase in the film thickness, regardless of the solution preparation conditions, Ga supply rate, and HCl supply rate. These results indicate that there is a low correlation between the improvement of surface roughness and crystallinity in the α-Ga2O3 films grown under the conditions described in this paper.
RESUMEN
BACKGROUND: Sporadic emergence of the highly pathogenic avian influenza (HPAI) H5N1 virus infection in humans is a serious concern because of the potential for a pandemic. Conventional or quantitative RT-PCR is the standard laboratory test to detect viral influenza infections. However, this technology requires well-equipped laboratories and highly trained personnel. A rapid, sensitive, and specific alternative screening method is needed. METHODS: By a luminescence-linked enzyme immunoassay, we have developed a H5N1 HPAI virus detection kit using anti-H5 hemagglutinin monoclonal antibodies in combination with the detection of a universal NP antigen of the type A influenza virus. The process takes 15 minutes by use of the fully automated luminescence analyzer, POCube. RESUTLS: We tested this H5/A kit using 19 clinical specimens from 13 patients stored in Vietnam who were infected with clade 1.1 or clade 2.3.4 H5N1 HPAI virus. Approximately 80% of clinical specimens were H5-positive using the POCube system, whereas only 10% of the H5-positive samples were detected as influenza A-positive by an immunochromatography-based rapid diagnostic kit. CONCLUSIONS: This novel H5/A kit using POCube is served as a rapid and sensitive screening test for H5N1 HPAI virus infection in humans.