Critical current fluctuations in graphene Josephson junctions.

We have studied 1/f noise in critical current [Formula: see text] in h-BN encapsulated monolayer graphene contacted by NbTiN electrodes. The sample is close to diffusive limit and the switching supercurrent with hysteresis at Dirac point amounts to [Formula: see text] nA. The low frequency noise in the superconducting state is measured by tracking the variation in magnitude and phase of a reflection carrier signal [Formula: see text] at 600-650 MHz. We find 1/f critical current fluctuations on the order of [Formula: see text] per unit band at 1 Hz. The noise power spectrum of critical current fluctuations [Formula: see text] measured near the Dirac point at large, sub-critical rf-carrier amplitudes obeys the law [Formula: see text] where [Formula: see text] and [Formula: see text] at [Formula: see text] Hz. Our results point towards significant fluctuations in [Formula: see text] originating from variation of the proximity induced gap in the graphene junction.

Anomalous Cyclotron Motion in Graphene Superlattice Cavities.

We consider graphene superlattice miniband fermions probed by electronic interferometry in magnetotransport experiments. By decoding the observed Fabry-Pérot interference patterns together with our corresponding quantum transport simulations, we find that the Dirac quasiparticles originating from the superlattice minibands do not undergo conventional cyclotron motion but follow more subtle trajectories. In particular, dynamics at low magnetic fields is characterized by peculiar, straight trajectory segments. Our results provide new insights into superlattice miniband fermions and open up novel possibilities to use periodic potentials in electron optics experiments.

Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study.

In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al2O3), titanium oxide (TiO2), and hafnium oxide (HfO2) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging to a specific group (i.e., with the same oxide) have a well-defined performance curve and that the choice of hafnium oxide represents the best trade-off in terms of dielectric properties. Graphene transistors employing HfO2 as the dielectric layer, in fact, exhibit the best performance in terms of both the cutoff frequency and the maximum frequency of oscillation.

Tuning Anti-Klein to Klein Tunneling in Bilayer Graphene.

We show that in gapped bilayer graphene, quasiparticle tunneling and the corresponding Berry phase can be controlled such that they exhibit features of single-layer graphene such as Klein tunneling. The Berry phase is detected by a high-quality Fabry-Pérot interferometer based on bilayer graphene. By raising the Fermi energy of the charge carriers, we find that the Berry phase can be continuously tuned from 2π down to 0.68π in gapped bilayer graphene, in contrast to the constant Berry phase of 2π in pristine bilayer graphene. Particularly, we observe a Berry phase of π, the standard value for single-layer graphene. As the Berry phase decreases, the corresponding transmission probability of charge carriers at normal incidence clearly demonstrates a transition from anti-Klein tunneling to nearly perfect Klein tunneling.

Tailoring supercurrent confinement in graphene bilayer weak links.

The Josephson effect is one of the most studied macroscopic quantum phenomena in condensed matter physics and has been an essential part of the quantum technologies development over the last decades. It is already used in many applications such as magnetometry, metrology, quantum computing, detectors or electronic refrigeration. However, developing devices in which the induced superconductivity can be monitored, both spatially and in its magnitude, remains a serious challenge. In this work, we have used local gates to control confinement, amplitude and density profile of the supercurrent induced in one-dimensional nanoscale constrictions, defined in bilayer graphene-hexagonal boron nitride van der Waals heterostructures. The combination of resistance gate maps, out-of-equilibrium transport, magnetic interferometry measurements, analytical and numerical modelling enables us to explore highly tunable superconducting weak links. Our study opens the path way to design more complex superconducting circuits based on this principle, such as electronic interferometers or transition-edge sensors.

Persistent hysteresis in graphene-mica van der Waals heterostructures.

We report the study of electronic transport in graphene-mica van der Waals heterostructures. We have designed various graphene field-effect devices in which mica is utilized as a substrate and/or gate dielectric. When mica is used as a gate dielectric we observe a very strong positive gate voltage hysteresis of the resistance, which persists in samples that were prepared in a controlled atmosphere down to even millikelvin temperatures. In a double-gated mica-graphene-hBN van der Waals heterostructure, we found that while a strong hysteresis occurred when mica was used as a substrate/gate dielectric, the same graphene sheet on mica substrate no longer showed hysteresis when the charge carrier density was tuned through a second gate with the hBN dielectric. While this hysteretic behavior could be useful for memory devices, our findings confirm that the environment during sample preparation has to be controlled strictly.