RESUMEN
In this research study, the effects of different parameters on the electron transfer rate from three quantum dots (QDs), CdSe, CdS, and CdTe, on three metal oxides (MOs), TiO2, SnO2, and SnO2, in quantum-dot-sensitized solar cells (QDSSCs) with porous structures in the presence of four types of blocking layers, ZnS, ZnO, TiO2, and Al2O3, are modeled and simulated using the Marcus theory and tunneling between two spheres for the first time. Here, the studied parameters include the change in the type and thickness of the blocking layer, the diameter of the QD, and the temperature effect. To model the effect of the blocking layer on the QD, the effective sphere method is used, and by applying it into the Marcus theory equation and the tunneling method, the electron transfer rate is calculated and analyzed. The obtained results in a wide range of temperatures of 250-400 °K demonstrate that, based on the composition of the MO-QD, the increase in the temperature could reduce or increase the electron transfer rate, and the change in the QD diameter could exacerbate the effects of the temperature. In addition, the results show which type and thickness of the blocking layer can achieve the highest electron transfer rate. In order to test the accuracy of the simulation method, we calculate the electron transfer rate in the presence of a blocking layer for a reported sample of a QDSSC manufacturing work, which was obtained with an error of ~3%. The results can be used to better interpret the experimental observations and to assist with the design and selection of the appropriate combination of MO-QD in the presence of a blocking layer effect.
RESUMEN
In this paper, we numerically analyze nonlinear asymmetric switching using a semiconductor optical amplifier (SOA) phase-shifter-based Mach-Zehnder interferometer (MZI), for the first time, to the best of our knowledge. The self-phase modulation (SPM) effect and nonlinear phase shift in each MZI arm are investigated for different input pulse intensities and linear gains in both picosecond and femtosecond regimes. The input light signal is split unequally over the two arms, where SOAs are placed and act as nonlinear phase shifters in each arm. The finite difference beam propagation method is used to solve the modified nonlinear Schrodinger equation to analyze the wave propagation. In this work, the main nonlinear effects in SOA, such as group velocity dispersion, Kerr effect, two-photon absorption, carrier heating, and spectral hole burning, are considered. Furthermore, the effect of SPM on distortion of the pulse shape and its spectrum, which can be used for pulse shaping in a picosecond-switching scheme, is studied. We depicted red and blue shifts that each pulse experiences in the process of switching in picosecond and femtosecond regimes, respectively. Based on the results for sub-picosecond input pulses, by controlling the bias current level in the MZI arms, the pulse distortion due to nonlinear effects of SOAs can be decreased at the switch output port, and symmetric pulse can be obtained. Switching with higher speed is possible in bulk SOAs in the femtosecond regime using asymmetric MZI-switching structure.