RESUMEN
Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding process and characterizing the bond quality for vertical device architectures. Here, integration of these two materials is achieved by room-temperature compression bonding centimeter-scale GaN and a diamond die via an intermetallic bonding layer of Ti/Au. Recent attempts at GaN/diamond bonding have utilized a modified surface activation bonding (SAB) method, which requires Ar fast atom bombardment immediately followed by bonding within the same tool under ultrahigh vacuum (UHV) conditions. The method presented here does not require a dedicated SAB tool yet still achieves bonding via a room-temperature metal-metal compression process. Imaging of the buried interface and the total bonding area is achieved via transmission electron microscopy (TEM) and confocal acoustic scanning microscopy (C-SAM), respectively. The thermal transport quality of the bond is extracted from spatially resolved frequency-domain thermoreflectance (FDTR) with the bonded areas boasting a thermal boundary conductance of >100 MW/m2·K. Additionally, Raman maps of GaN near the GaN-diamond interface reveal a low level of compressive stress, <80 MPa, in well-bonded regions. FDTR and Raman were coutilized to map these buried interfaces and revealed some poor thermally bonded areas bordered by high-stress regions, highlighting the importance of spatial sampling for a complete picture of bond quality. Overall, this work demonstrates a novel method for thermal management in vertical GaN devices that maintains low intrinsic stresses while boasting high thermal boundary conductances.
RESUMEN
We investigate the mechanisms of energy transfer in Mn2+-doped ethylammonium lead bromide (EA2PbBr4:Mn2+), a two-dimensional layered perovskite (2DLP), using cryogenic optical spectroscopy. At temperature T > 120 K, photoluminescence (PL) is dominated by emission from Mn2+, with complete suppression of band edge (BE) emission and self-trapped exciton (STE) emission. However, for T < 120 K, in addition to Mn2+ emission, PL is observed from BE and STEs. Data further reveal that for 20 K < T < 120 K, STEs form the most dominant routes in assisting energy transfer (ET) from 2DLP to Mn2+ dopants. However, at higher Mn2+ concentration, higher activation energies indicate defect states come into play, successfully competing with STEs for ET both from BE to STE states and from STE to Mn2+. Finally, using polarization-resolved spectroscopy, we demonstrate optical spin orientation of the Mn2+ ions via ET from 2DLP excitons at zero magnetic field. Our results reveal fundamental insights on the interactions between quantum confined charge carriers and dopants in organometal halide perovskites.
RESUMEN
We investigate the effect of functionalization by acid/amine combinations of four aromatic capping ligands on the optoelectronic properties of CH3NH3PbBr3 perovskite quantum dots (PQDs). These include benzoic acid (BA), phenylacetic acid (PAA), benzylamine, and isopropyl benzylamine. We observe that charge transfer efficiency in PQD films comprising BA-ligated samples varies between 12% and 95% as the dot density is tuned from 102 to 105 dots/µm2 but is consistently â¼92% over that entire range for PAA-ligated PQDs. As temperature T decreases, initially, recombination is dominated by bound or trapped excitons, but below 80 K, spectral broadening, accompanied by free excitonic behavior, is observed. Our results indicate enhanced charge delocalization at lower values of T, which reduces the level of exciton confinement and recombination decay rates and underlines the importance of investigating PQD-ligand interactions at a fundamental level given the significant effect minute changes in ligand structures have on the optoelectronic properties of quantum dots.
