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1.
Opt Express ; 24(19): 21454-62, 2016 Sep 19.
Artículo en Inglés | MEDLINE | ID: mdl-27661885

RESUMEN

We demonstrate a surface-normal coupled tunable hybrid silicon laser array for the first time using passively-aligned, high-accuracy flip chip bonding. A 2x6 III-V reflective semiconductor optical amplifier (RSOA) array with integrated total internal reflection mirrors is bonded to a CMOS SOI chip with grating couplers and silicon ring reflectors to form a tunable hybrid external-cavity laser array. Waveguide-coupled wall plug efficiency (wcWPE) of 2% and output power of 3 mW has been achieved for all 12 lasers. We further improved the performance by reducing the thickness of metal/dielectric stacks and achieved 10mW output power and 5% wcWPE with the same integration techniques. This non-invasive, one-step back end of the line (BEOL) integration approach provides a promising solution to high density laser sources for future large-scale photonic integrated circuits.

2.
Opt Express ; 24(12): 13204-9, 2016 Jun 13.
Artículo en Inglés | MEDLINE | ID: mdl-27410337

RESUMEN

We report the first closed-loop operation of a 100 Gbps polarization-insensitive, 4-channel wavelength-tracking WDM receiver in silicon photonics platform. Error-free operation is achieved with input polarization scrambling over input wavelength change of 4.5 nm using efficient thermal tuning of Si microring demux, corresponding to greater than 60°C fluctuation in temperature.

3.
Opt Express ; 23(10): 13172-84, 2015 May 18.
Artículo en Inglés | MEDLINE | ID: mdl-26074570

RESUMEN

We report on a packaged prototype of a WDM photonic transceiver. It is an all-solid state hybrid assembly based on 130nm SOI photonic circuitry integrated with a 40nm CMOS VLSI driver. Our prototype supports eight tunable WDM channels operating at 10Gb/s, each capable of both transmitting and receiving data on the same chip. We discuss two options to close the link using the optical fiber or a waveguide bridge chip. We provide integration details and supporting link measurement data to describe packaged photonic module and its power efficient functionality with its on-chip power per channel averaging 1.3pJ/bit, excluding off-chip laser electrical power.

4.
Opt Express ; 22(10): 12628-33, 2014 May 19.
Artículo en Inglés | MEDLINE | ID: mdl-24921379

RESUMEN

We report the first complete 10G silicon photonic ring modulator with integrated ultra-efficient CMOS driver and closed-loop wavelength control. A selective substrate removal technique was used to improve the ring tuning efficiency. Limited by the thermal tuner driver output power, a maximum open-loop tuning range of about 4.5nm was measured with about 14mW of total tuning power including the heater driver circuit power consumption. Stable wavelength locking was achieved with a low-power mixed-signal closed-loop wavelength controller. An active wavelength tracking range of > 500GHz was demonstrated with controller energy cost of only 20fJ/bit.

5.
Opt Express ; 22(7): 7678-85, 2014 Apr 07.
Artículo en Inglés | MEDLINE | ID: mdl-24718143

RESUMEN

A highly efficient silicon (Si) hybrid external cavity laser with a wavelength tunable ring reflector is fabricated on a complementary metal-oxide semiconductor (CMOS)-compatible Si-on-insulator (SOI) platform and experimental results with high output power are demonstrated. A III-V semiconductor gain chip is edge-coupled into a SOI cavity chip through a SiN(x) spot size converter and Si grating couplers are incorporated to enable wafer-scale characterization. The laser output power reaches 20 mW and the highest wall-plug efficiency of 7.8% is measured at 17.3 mW in un-cooled condition. The laser wavelength tuning ranges are 8 nm for the single ring reflector cavity and 35 nm for the vernier ring reflector cavity, respectively. The Si hybrid laser is a promising light source for energy-efficient Si CMOS photonic links.

6.
Opt Express ; 21(12): 13958-68, 2013 Jun 17.
Artículo en Inglés | MEDLINE | ID: mdl-23787585

RESUMEN

We present the design, fabrication and characterization of athermal nano-photonic silicon ring modulators. The athermalization method employs compensation of the silicon core thermo-optic contribution with that from the amorphous titanium dioxide (a-TiO(2)) overcladding with a negative thermo-optic coefficient. We developed a new CMOS-compatible fabrication process involving low temperature RF magnetron sputtering of high-density and low-loss a-TiO(2) that can withstand subsequent elevated-temperature CMOS processes. Silicon ring resonators with 275 nm wide rib waveguide clad with a-TiO(2) showed near complete athermalization and moderate optical losses. Small-signal testing of the micro-resonator modulators showed high extinction ratio and gigahertz bandwidth.


Asunto(s)
Semiconductores , Silicio/química , Resonancia por Plasmón de Superficie/instrumentación , Telecomunicaciones/instrumentación , Titanio/química , Diseño de Equipo , Análisis de Falla de Equipo
7.
Opt Express ; 21(26): 32425-31, 2013 Dec 30.
Artículo en Inglés | MEDLINE | ID: mdl-24514836

RESUMEN

We demonstrate a hybrid III-V/SOI laser by vertically coupling a III-V RSOA chip with a SOI-CMOS chip containing a tunable wavelength selective reflector. We report a waveguide-coupled wall-plug-efficiency of 5.5% and output power of 10 mW. A silicon resistor-based microheater was integrated to thermally tune a ring resonator for precise lasing wavelength control. A high tuning efficiency of 2.2 nm/mW over a range of 18 nm was achieved by locally removing the SOI handler substrate. C-band single mode lasing was confirmed with a side mode suppression ratio of 35 dB. This grating coupler based vertical integration approach can be scaled up in two dimensions for efficient multi-wavelength sources in silicon photonics.

8.
Opt Express ; 20(9): 9396-402, 2012 Apr 23.
Artículo en Inglés | MEDLINE | ID: mdl-22535028

RESUMEN

We propose and demonstrate silicon photonic integrated circuits (PICs) for free-space spatial-division-multiplexing (SDM) optical transmission with multiplexed orbital angular momentum (OAM) states over a topological charge range of -2 to +2. The silicon PIC fabricated using a CMOS-compatible process exploits tunable-phase arrayed waveguides with vertical grating couplers to achieve space division multiplexing and demultiplexing. The experimental results utilizing two silicon PICs achieve SDM mux/demux bit-error-rate performance for 1­b/s/Hz, 10-Gb/s binary phase shifted keying (BPSK) data and 2-b/s/Hz, 20-Gb/s quadrature phase shifted keying (QPSK) data for individual and two simultaneous OAM states.


Asunto(s)
Semiconductores , Procesamiento de Señales Asistido por Computador/instrumentación , Silicio/química , Resonancia por Plasmón de Superficie/instrumentación , Telecomunicaciones/instrumentación , Diseño de Equipo , Análisis de Falla de Equipo , Integración de Sistemas
9.
Opt Lett ; 37(3): 341-3, 2012 Feb 01.
Artículo en Inglés | MEDLINE | ID: mdl-22297346

RESUMEN

This Letter demonstrates a measurement technique based on frequency-to-time mapping and coherent detection, which enables the complete (i.e., amplitude and phase) characterization of dynamically reconfigurable photonic filters. We apply this technique to a unit cell from a silicon CMOS-compatible photonic lattice filter that has a rapidly changing transfer function with an 8.33 ns update time, 120 MHz spectral resolution, and 12 GHz bandwidth. These dynamic measurements allow characterization of transients, thermal effects, filter fidelity, and other time-dependent phenomena during switching.

10.
Opt Express ; 19(14): 13245-56, 2011 Jul 04.
Artículo en Inglés | MEDLINE | ID: mdl-21747479

RESUMEN

We demonstrate a fully-reconfigurable fourth-order optical lattice filter built by cascading identical unit cells consisting of a Mach-Zehnder interferometer (MZI) and a ring resonator. The filter is fabricated using a commercial silicon complementary metal oxide semiconductor (CMOS) process and reconfigured by current injection into p-i-n diodes with a reconfiguration time of less than 10 ns. The experimental results show full control over the single unit cell pole and zero, switching the unit cell transfer function between a notch filter and a bandpass filter, narrowing the notch width down to 400 MHz, and tuning the center wavelength over the full free spectral range (FSR) of 10 GHz. Theoretical and experimental results show tuning dynamics and associated optical losses in the reconfigurable filters. The full-control of each of the four cascaded single unit cells resulted in demonstrations of a number of fourth-order transfer functions. The multimedia experimental data show live tuning and reconfiguration of optical lattice filters.


Asunto(s)
Filtración/instrumentación , Interferometría/instrumentación , Refractometría/instrumentación , Silicio/química , Transistores Electrónicos , Diseño Asistido por Computadora , Diseño de Equipo , Análisis de Falla de Equipo
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