Kondo scattering in underdoped Nd1-xSrxNiO2 infinite-layer superconducting thin films.

The recent discovery of superconductivity in infinite-layer nickelates generates tremendous research endeavors, but the ground state of their parent compounds is still under debate. Here, we report experimental evidence for the dominant role of Kondo scattering in the underdoped Nd1-xSrxNiO2 thin films. A resistivity minimum associated with logarithmic temperature dependence in both longitudinal and Hall resistivities are observed in the underdoped Nd1-xSrxNiO2 samples before the superconducting transition. At lower temperatures down to 0.04 K, the resistivities become saturated, following the prediction of the Kondo model. A linear scaling behavior [Formula: see text] between anomalous Hall conductivity [Formula: see text] and conductivity [Formula: see text]is revealed, verifying the dominant Kondo scattering at low temperature. The effect of weak (anti-)localization is found to be secondary. Our experiments can help in clarifying the basic physics in the underdoped Nd1-xSrxNiO2 infinite-layer thin films.

A natural indirect-to-direct band gap transition in artificially fabricated MoS2 and MoSe2 flowers.

Twisted bilayer (tB) transition metal dichalcogenide (TMD) structures formed from two pieces of a periodic pattern overlaid with a relative twist manifest novel electronic and optical properties and correlated electronic phenomena. Here, twisted flower-like MoS2 and MoSe2 bilayers were artificially fabricated by the chemical vapor deposition (CVD) method. Photoluminescence (PL) studies demonstrated that an energy band structural transition from the indirect gap to the direct gap happened in the region away from the flower center in tB MoS2 (MoSe2) flower patterns, accompanied by an enhanced PL intensity. The indirect-to-direct-gap transition in the tB-MoS2 (MoSe2) flower dominantly originated from a gradually enlarged interlayer spacing and thus, interlayer decoupling during the spiral growth of tB flower patterns. Meanwhile, the expanded interlayer spacing resulted in a decreased effective mass of the electrons. This means that the charged exciton (trion) population was reduced and the neutral exciton density was increased to obtain the upgraded PL intensity in the off-center region. Our experimental results were further evidenced by the density functional theory (DFT) calculations of the energy band structures and the effective masses of electrons and holes for the artificial tB-MoS2 flower with different interlayer spacings. The single-layer behavior of tB flower-like homobilayers provided a viable route to finely manipulate the energy band gap and the corresponding exotic optical properties by locally tuning the stacked structures and to satisfy the real requirement in TMD-based optoelectronic devices.

Low-Temperature Synthesis of Boron Nitride as a Large-Scale Passivation and Protection Layer for Two-Dimensional Materials and High-Performance Devices.

Two-dimensional materials (2DMs) with extraordinary electronic and optical properties have attracted great interest in optoelectronic applications. Due to their atomically thin feature, 2DM-based devices are generally sensitive to oxygen and moisture in ambient air, and thus, practical application of durable 2DM-based devices remains challenging. Here, we report a novel strategy to directly synthesize amorphous BN film on various 2DMs and field-effect transistor (FET) devices at low temperatures by conventional chemical vapor deposition. The wafer-scale BN film with controllable thickness serves as a passivation and heat dissipation layer, further improving the long-term stability, the resistance to laser irradiation, and the antioxidation performance of the underneath 2DMs. In particular, the BN capping layer could be deposited directly on a WSe2 FET at low temperature to achieve a clean and conformal interface. The high performance of the BN-capped WSe2 device is realized with suppressed current fluctuations and 10-fold enhanced carrier mobility. The transfer-free amorphous BN synthesis technique is simple and applicable to various 2DMs grown on arbitrary substrates, which shows great potential for applications in future two-dimensional electronics.

Ionic Current Fluctuation and Orientation of Tetrahedral DNA Nanostructures in a Solid-State Nanopore.

Understanding the dynamic behavior of a nanostructure translocating through a nanopore is important for various applications. In this paper, the characteristics in ion current traces of tetrahedral DNA nanostructures (TDN) translocating through a solid-state nanopore are examined, by combined experimental and theoretical simulations. The results of finite element analysis reveal the correlation between orientation of TDN and the conductance blockade. The experimentally measured fluctuations in the conductance blockade, expressed as voltage-dependent histogram profiles, are consistent with the simulation, revealing the nature of a random distribution in orientation and weak influence of electrostatic and viscous torques. The step changes in orientation of a TDN during translocation are further explained by the collision with the nanopore, while the gradual changes in orientation illustrate the impact of a weak torque field in the nano-fluidic channel. The results demonstrate a general method and basic understanding in the dynamic behavior of nanostructures translocating through solid-state nanopores.

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling.

In two-dimensional transitional metal dichalcogenides, tuning the spin-valley-layer coupling via changing layer numbers and stacking orders remains desirable for their application in valleytronics. Herein, six-point star-like MoSe2 nanoflakes simultaneously containing different atom registration regions from monolayer to bilayer with 2H and 3R stacking order were fabricated, and the valley polarizations were comparably investigated by circular polarized photoluminescent spectroscopy. The degree of valley polarization was detected to be about 12.5% in the monolayer and 10% in the 2H bilayer, but greatly upgraded to about 40% in the 3R bilayer MoSe2. This enhancement was attributed to the multiband spin splitting and generation of spin-dependent layer polarization for the 3R MoSe2 bilayer, which is well evidenced by our ab initio calculations of the energy band structures. Our results demonstrate that preparing TMD crystals with controllable stacking orders and interlayer coupling is a promising route to tune the valley index in TMDs for developing valleytronics technology.

Robust atomic-structure of the 6 × 2 reconstruction surface of Ge(110) protected by the electronically transparent graphene monolayer.

Wafer-scale growth of the unidirectional graphene monolayer on Ge surfaces has rejuvenated the intense study of the surfaces and interfaces of semiconductors underneath graphene. Recently, it was reported that the Ge atoms in the Ge(110) surface beneath a graphene monolayer underwent a rearrangement and formed an ordered (6 × 2) reconstruction. However, a plausible atomic model related to this (6 × 2) reconstruction is still lacking. Here, by using scanning tunnelling microscopy/spectroscopy (STM/S) and density functional theory (DFT) calculations, we deeply investigated the structural and electronic properties of the Ge(110) (6 × 2) surface encapsulated by a graphene monolayer. The (6 × 2) surface reconstruction was confirmed for the post-annealing-graphene-covered Ge(110) surface via STM, and was found to be quite air-stable, owing to the protection of the graphene monolayer against surface oxidation. Our study disclosed that the topographic features of the topmost graphene monolayer and the Ge(110) surface could be selectively imaged by utilizing suitable scanning biases. According to the STM results and DFT calculations, a rational ball-and-stick model of the (6 × 2) reconstruction was successfully provided, in which an elemental building block comprising two Ge triangles and two isolated Ge atoms adsorbed on the unreconstructed ideal Ge(110) surface. Local density of states of the graphene/Ge surface was explored via scanning tunneling spectroscopy (STS), presenting four well-defined differential conductance (dI/dV) peaks, protruding at energies of 0.2, 0.4, 0.6 and 0.8 eV, respectively. The four peaks predominantly originated from the surface states of the reconstructing adatoms and were well reproduced by our theoretical simulation. This result means that the Ge surface is very robust after being encapsulated by the epitaxial graphene, which could be advantageous for directly fabricating graphene/Ge-hybrid high-speed electronics and optoelectronics based on conventional microelectronics technology.

Large linear magnetoresistance caused by disorder in WTe2- δ thin film.

Weyl semimetal WTe2 has attracted considerable attention owing to its extremely large, unsaturated and quadratic magnetoresistance. Here, we study the magnetotransport properties of WTe2-δ thin film, which shows an unsaturated and linear magnetoresistance of up to ∼1650%. A more complex and accurate method, known as the maximum entropy mobility spectrum, is used to analyze the mobility and density of carriers. The results show that linear magnetoresistance can be explained by the classical disorder model because the slope of linear magnetoresistance and the crossover field are proportional to the mobility and inverse mobility, respectively. Furthermore, the validity of the maximum entropy mobility spectrum is validated by the Shubnikov-de Haas oscillations. Moreover, at low temperature, we determined that the unsaturated and near-quadratic magnetoresistance in the WTe1.93 thin film can be explained by charge compensation. Note that the electron-hole compensation is broken in the WTe1.42 thin film, which indicates that the carrier scattering induced by the disorder may suppress the charge compensation in the WTe2 sample with defects/dopants. To summarize, the discovery of disorder-induced linear magnetoresistance allows us to explain different magnetoresistance behaviors of WTe2.

Enhancement of Rashba spin-orbit coupling by electron confinement at the LaAlO3/SrTiO3 interface.

Electrical transport property is closely related to the dimensionality of carriers' distribution. In this work, we succeed in tuning the carriers' distribution and the Rashba spin-orbit coupling at LaAlO3/SrTiO3 interface by varying the oxygen pressure (c-P O2) adopted in crystalline LaAlO3 growth. Measurements of the in-plane anisotropic magnetoresistance and the conducting-layer thickness indicate that the carriers' distribution changes from three to two dimensions with c-P O2 increasing, i.e. the electron confinement gets stronger. Importantly, by measuring the low-temperature out-of-plane magnetoresistance and analyzing the weak localization/weak anti-localization, we find that the strength of Rashba spin-orbit coupling can be enhanced by electron confinement. The electron confinement is a manifestation of breaking of spatial inversion symmetry. Therefore, our work reveals the intimate relationship between spatial inversion symmetry breaking and Rashba spin-orbit coupling at the LaAlO3/SrTiO3 interface, and provides a new method to tune the Rashba spin-orbit coupling, which is valuable in the application of oxide-spintronics.

Planar Hall effect induced by anisotropic orbital magnetoresistance in type-II Dirac semimetal PdTe2.

We measure planar Hall effect (PHE) and longitudinal anisotropic magnetoresistance (AMR) with a magnetic field rotating in the a-b plane in the type-II Dirac semimetal PdTe2. The measured PHE and AMR curves can be fitted by the theoretical equations; however, a detailed analysis of the extracted data demonstrates that the parameter related to PHE and AMR has no relationship with the chiral anomaly due to the absence of negative longitudinal magnetoresistance (MR) when the electric and magnetic fields are parallel to each other. Meanwhile, we prove that the origin of PHE in PdTe2 is the anisotropic orbital MR. Our work suggests that negative longitudinal MR is necessary to identify chiral anomaly, and we cannot in general use PHE as a signal for the presence of the chiral anomaly in Dirac/Weyl semimetals.

Mo Concentration Controls the Morphological Transitions from Dendritic to Semicompact, and to Compact Growth of Monolayer Crystalline MoS2 on Various Substrates.

The domain morphology in the growth of transition-metal dichalcogenides (TMDCs) is mostly triangular but rarely dendritic. Here, we report a robust chemical vapor deposition method to fabricate atomic-thin 2H-phase MoS2 dendrites on several single-crystalline substrates with different lattice structures, such as rutile-TiO2(001), SrTiO3(001), and sapphire(0001). It is found that by tuning the concentration of Mo adatoms, the morphology of MoS2 domains on these substrates evolves from tridentate dendrites at a low Mo concentration to semicompact fractal domains at an intermediate Mo concentration, and to a compact triangular shape at a high Mo concentration. First-principles calculations reveal that the edge diffusion barrier of Mo is comparable to the attachment barrier, inhibiting fast Mo atom diffusion along the edge. Kinetics Monte Carlo simulations with varying Mo concentrations well reproduce the experimental results. Our combined experimental and theoretical analyses evidently show that the growth of MoS2 dendritic domains at a low Mo concentration is a nonequilibrium process, which is dominated by the kinetics of Mo adatoms. Our study presents an effective route to control the morphology of TMDCs by simply tuning the transition-metal adatom concentration.

Translocation of tetrahedral DNA nanostructures through a solid-state nanopore.

Tetrahedral DNA nanostructures (TDNs) are programmable DNA nanostructures that have great potential in bio-sensing, cell imaging and therapeutic applications. In this study, we investigate the translocation behavior of individual TDNs through solid-state nanopores. Pronounced translocation signals for TDNs are observed that are sensitive to the size of the nanostructures. TDNs bound to linear DNA molecules produce an extra signal in the ionic current traces. Statistical analysis of its relative temporal position reveals distinct features between TDNs bound to the end and those bound to the middle of the linear DNA molecules. A featured current trace for two TDNs bound to the same linear DNA molecule has also been observed. Our study demonstrates the potential of using TDNs as sensitive bio-sensors to detect specific segments of a single DNA molecule in real time, based on solid-state nanopore devices.

Interaction between in-gap states and carriers at the conductive interface between perovskite oxides.

The 2D electron systems of SrTiO3/NdGaO3 (STO/NGO) and amorphous-LaAlO3/SrTiO3/NdGaO3 (a-LAO/STO/NGO) heterojunctions were explored. An obvious interaction between in-gap states (IGSs) and carriers was found. The IGSs can trap a large number of carriers and enhance carrier scattering. As a result of the high density of IGSs in STO, the conductivity of STO/NGO was severely weakened. However, for a-LAO/STO/NGO heterojunctions, the high carrier density can reduce the effect of IGSs through the electrostatic screening effect. The competition between IGSs and the screening effect of carriers results in an insulator-metal transition and a strange temperature dependence of carrier density. We also explored the interaction between IGSs and carriers theoretically. A mathematical description was proposed and the calculated results showed good agreement with experimental findings.

Influence of In-Gap States on the Formation of Two-Dimensional Election Gas at ABO3/SrTiO3 Interfaces.

We explored in-gap states (IGSs) in perovskite oxide heterojunction films. We report that IGSs in these films play a crucial role in determining the formation and properties of interfacial two-dimensional electron gas (2DEG). We report that electron trapping by IGSs opposes charge transfer from the film to the interface. The IGS in films yielded insulating interfaces with polar discontinuity and explained low interface carrier density of conducting interfaces. An ion trapping model was proposed to explain the physics of the IGSs and some experimental findings, such as the unexpected formation of 2DEG at the initially insulating LaCrO3/SrTiO3 interface and the influence of substitution layers on 2DEG.

Formation of Two-dimensional Electron Gas at Amorphous/Crystalline Oxide Interfaces.

Experimentally, we found the percentage of low valence cations, the ionization energy of cations in film, and the band gap of substrates to be decisive for the formation of two-dimensional electron gas at the interface of amorphous/crystalline oxide (a-2DEG). Considering these findings, we inferred that the charge transfer from the film to the interface should be the main mechanism of a-2DEG formation. This charge transfer is induced by oxygen defects in film and can be eliminated by the electron-absorbing process of cations in the film. Based on this, we propose a simple dipole model that successfully explains the origin of a-2DEG, our experimental findings, and some important properties of a-2DEG.

Building chessboard-like supramolecular structures on Au(111) surfaces.

We investigate an anthracene derivative, 3(5)-(9-anthryl) pyrazole (ANP), self-assembled on the Au(111) surface by means of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. A chessboard-like network structure composed of ANP molecules is found, covering the whole Au(111) substrate. Our STM results and DFT calculations reveal that the formation of chessboard-like networks originates from a basic unit cell, a tetramer structure, which is formed by four ANP molecules connected through C-H…N hydrogen bonds. The hydrogen bonds inside each tetramer and the molecule-substrate interaction are fundamentally important in providing a driving force for formation of the supramolecular networks.

Liquid-assisted tip manipulation: fabrication of twisted bilayer graphene superlattices on HOPG.

We use the tip of a scanning tunneling microscope (STM) to manipulate single weakly bound nanometer-sized sheets on a highly oriented pyrolytic graphite (HOPG) surface through artificially increasing the tip and sample interaction by pretreatment of the surface using a liquid thiol molecule. By this means it is possible to tear apart a graphite sheet against a step and fold this part onto the HOPG surface and thus generate graphene superlattices with hexagonal symmetry. The tip and sample surface interactions, including the van der Waals force, electrostatic force and capillary attraction force originating from the Laplace pressure due to the formation of a highly curved fluid meniscus connecting the tip and sample, are discussed quantitatively to understand the formation mechanism of a graphene superlattice induced by the STM tip. The capillary force plays a key role in manipulating the graphite surface sheet under humid conditions. Our approach provides a simple and feasible route to prepare controllable superlattices and graphene nanoribbons and also to better understand the process of generation of a graphene superlattice on the surface of HOPG with the tip.

Strain and curvature induced evolution of electronic band structures in twisted graphene bilayer.

It is well established that strain and geometry could affect the band structure of graphene monolayer dramatically. Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature, which are found to strongly affect the local band structures of the twisted graphene bilayer. The energy difference of the two low-energy van Hove singularities decreases with increasing lattice deformation and the states condensed into well-defined pseudo-Landau levels, which mimic the quantization of massive chiral fermions in a magnetic field of about 100 T, along a graphene wrinkle. The joint effect of strain and out-of-plane distortion in the graphene wrinkle also results in a valley polarization with a significant gap. These results suggest that strained graphene bilayer could be an ideal platform to realize the high-temperature zero-field quantum valley Hall effect.

Angle-dependent van Hove singularities in a slightly twisted graphene bilayer.

Recent studies show that two low-energy van Hove singularities (VHSs) seen as two pronounced peaks in the density of states could be induced in a twisted graphene bilayer. Here, we report angle-dependent VHSs of a slightly twisted graphene bilayer studied by scanning tunneling microscopy and spectroscopy. We show that energy difference of the two VHSs follows ΔE(vhs)∼ℏν(F)ΔK between 1.0° and 3.0° [here ν(F)∼1.1 × 10(6) m/s is the Fermi velocity of monolayer graphene, and ΔK = 2Ksin(θ/2) is the shift between the corresponding Dirac points of the twisted graphene bilayer]. This result indicates that the rotation angle between graphene sheets does not result in a significant reduction of the Fermi velocity, which quite differs from that predicted by band structure calculations. However, around a twisted angle θ∼1.3°, the observed ΔE(vhs)∼0.11 eV is much smaller than the expected value ℏν(F)ΔK∼0.28 eV at 1.3°. The origin of the reduction of ΔE(vhs) at 1.3° is discussed.

Scanning tunnelling microscope studies of angstrom-scale Co3O4 nanowires.

We report the bottom-up assembly of an atomic-scale building block, which consists of four Co(3+) cations, two Co(2+) cations, and eight O(2-) anions, for generating one-dimensional Co(3)O(4) nanostructures with diameters ranging from 0.5 to 3 nm. Controlled experiments were carried out and the growth mechanism of the Co(3)O(4) nanowires was investigated. The effects of a single cation defect on the epitaxial growth of the one-dimensional nanostructures were investigated. We proposed a self-rectifying growth mechanism on the basis of direct experimental observations. This mechanism will help us to understand synthesized crystals usually exhibiting homogeneous composition and uniform morphology, though the existence of defects is inevitable in the growth process.

Self-assembled monolayers of CH3COS- terminated surfactant-encapsulated polyoxometalate complexes.

Self-assembled monolayers (SAMs) on gold surfaces based on three kinds of acetylthio-surfactant-encapsulated polyoxometalate clusters (thio-SECs) terminated with multiple CH(3)COS- groups, (NC(26)H(55)S(CO)CH(3))(6)H(2)[Co(H(2)O)CoW(11)O(39)], (NC(26)H(55)S(CO)CH(3))(13)H(3)[Co(4)(H(2)O)(2)(P(2)W(15)O(56))(2)], and (NC(26)H(55)S(CO)CH(3))(13)[Fe(4)(H(2)O)(2)(P(2)W(15)O(56))(2)]Br, have been prepared, which is representative of a general methodology to fabricate polyoxometalate-based SAMs. Thio-SECs self-assembled into monolayers on gold surfaces through the hydrolysis of CH(3)COS- groups and the subsequent formation of S-Au bonds, which was confirmed by grazing angle infrared spectroscopy, X-ray photoelectron spectroscopy, and ellipsometric and scanning tunneling microscopy (STM) measurements. Furthermore, the SAMs of the thio-SECs possess closely packed structures, and the local short-range order is clearly observed in the magnified STM image. We have also investigated the electrochemical behavior of SAMs of thio-SECs by cyclic voltammetry in detail, and the redox potential of the original polyoxometalates has been well retained. The electrochemical signals of the SAMs are very weak because of the small moiety of thio-SECs that are electrochemically accessible in the cyclic voltammetry experiments. The polyoxometalate-modified electrodes that we prepared are not only highly ordered in the local short range but also stable in electrochemical cycling because of the multiple S-Au bonds of thio-SECs on the gold substrates that aid in the construction of functional materials such as electrochemical and electrocatalytic devices.