Integrated photon pair source based on a silicon nitride micro-ring resonator for quantum memories.

We report the design of an integrated photon pair source based on spontaneous four-wave mixing (SFWM), implemented in an integrated micro-ring resonator in the silicon nitride platform (Si3N4). The signal photon is generated with emission at 606 nm and bandwidth of 3.98 MHz, matching the spectral properties of praseodymium ions (Pr), while the idler photon is generated at 1430.5 nm matching the wavelength of a CWDM channel in the E-band. This novel, to the best of our knowledge, device is designed to interact with a quantum memory based on a Y2SiO5 crystal doped with Pr3+ ions, in which we used cavity-enhanced SFWM along with dispersion engineering to reach the required wavelength and the few megahertz signal photon spectral bandwidth.

Shaping the spectral correlation of bi-photon quantum frequency combs by multi-frequency excitation of an SOI integrated nonlinear resonator.

We reveal the generation of a broadband (> 1.9 THz) bi-photon quantum frequency comb (QFC) in a silicon-on-insulator (SOI) Fabry-Pérot micro-cavity and the control of its spectral correlation properties. Correlated photon pairs are generated through three spontaneous four-wave mixing (SFWM) processes by using a co-polarized bi-chromatic coherent input with power P1 and P2 on adjacent resonances of the nonlinear cavity. Adjusting the spectral power ratio r = P1/(P1 + P2) allows control over the influence of each process leading to an enhancement of the overall photon pair generation rate (PGR) µ(r) by a maximal factor of µ(r = 0.5)/µ(r = 0) ≈ 1.5, compared to the overall PGR provided by a single-pump configuration with the same power budget. We demonstrate that the efficiency aND of the non-degenerate excitation SFWM process (NDP) doubles the efficiency a1 ≈ a2 of the degenerate excitation SFWM processes (DP), showing a good agreement with the provided model.

Design and fabrication of Mach-Zehnder interferometers in soda-lime glass for temperature sensing applications.

High sensitivity represents one of the main goals that sensing devices need to satisfy for their applications. This work presents to the best of our knowledge the first integrated Mach-Zehnder interferometer (MZI) embedded in soda-lime glass with comparable sensitivity to silicon-on-insulator (SOI) devices. We manufactured the MZIs by the femtosecond direct laser writing (FDLW) technique and characterized them with temperature. Four buried MZIs were manufactured by slightly increasing the optical path due to separation between the arms of the interferometer (Δ s). We achieved a fringe shift of ∼8n m for an increase of 0.18 µm. We have characterized one of these devices with temperature from 30°C to 70°C obtaining a sensitivity of ∼28p m/ ∘ C. We improved the sensitivity of the device to ∼54p m/ ∘ C due to the advantage of the unique three-dimensional (3D) capabilities that FDLW provides, overcoming the characteristically low thermo-optic coefficient of soda-lime glass just by rotating the MZI structure 11°.