A chip-scale second-harmonic source via self-injection-locked all-optical poling.

Second-harmonic generation allows for coherently bridging distant regions of the optical spectrum, with applications ranging from laser technology to self-referencing of frequency combs. However, accessing the nonlinear response of a medium typically requires high-power bulk sources, specific nonlinear crystals, and complex optical setups, hindering the path toward large-scale integration. Here we address all of these issues by engineering a chip-scale second-harmonic (SH) source based on the frequency doubling of a semiconductor laser self-injection-locked to a silicon nitride microresonator. The injection-locking mechanism, combined with a high-Q microresonator, results in an ultra-narrow intrinsic linewidth at the fundamental harmonic frequency as small as 41 Hz. Owing to the extreme resonant field enhancement, quasi-phase-matched second-order nonlinearity is photoinduced through the coherent photogalvanic effect and the high coherence is mapped on the generated SH field. We show how such optical poling technique can be engineered to provide efficient SH generation across the whole C and L telecom bands, in a reconfigurable fashion, overcoming the need for poling electrodes. Our device operates with milliwatt-level pumping and outputs SH power exceeding 2 mW, for an efficiency as high as 280%/W under electrical driving. Our findings suggest that standalone, highly-coherent, and efficient SH sources can be integrated in current silicon nitride photonics, unlocking the potential of χ(2) processes in the next generation of integrated photonic devices.

Erbium-doped hybrid waveguide amplifiers with net optical gain on a fully industrial 300 mm silicon nitride photonic platform.

Recently, erbium-doped integrated waveguide devices have been extensively studied as a CMOS-compatible and stable solution for optical amplification and lasing on the silicon photonic platform. However, erbium-doped waveguide technology still remains relatively immature when it comes to the production of competitive building blocks for the silicon photonics industry. Therefore, further progress is critical in this field to answer the industry's demand for infrared active materials that are not only CMOS-compatible and efficient, but also inexpensive and scalable in terms of large volume production. In this work, we present a novel and simple fabrication method to form cost-effective erbium-doped waveguide amplifiers on silicon. With a single and straightforward active layer deposition, we convert passive silicon nitride strip waveguide channels on a fully industrial 300 mm photonic platform into active waveguide amplifiers. We show net optical gain over sub-cm long waveguide channels that also include grating couplers and mode transition tapers, ultimately demonstrating tremendous progress in developing cost-effective active building blocks on the silicon photonic platform.

Dual-polarization silicon nitride Bragg filters with low thermal sensitivity.

Wideband and polarization-independent wavelength filters with low sensitivity to temperature variations have great potential for wavelength division multiplexing applications. However, simultaneously achieving these metrics is challenging for silicon-on-insulator photonics technology. Here, we harness the reduced index contrast and the low thermo-optic coefficient of silicon nitride to demonstrate waveguide Bragg grating filters with wideband apolar rejection and low thermal sensitivity. Filter birefringence is reduced by judicious design of a triangularly shaped lateral corrugation. Based on this approach, we demonstrate silicon nitride Bragg filters with a measured polarization-independent 40 dB optical rejection with negligible off-band excess loss, and a sensitivity to thermal variations below 20 pm/°C.

Diffraction-less propagation beyond the sub-wavelength regime: a new type of nanophotonic waveguide.

Sub-wavelength grating (SWG) metamaterials have garnered a great interest for their singular capability to shape the propagation of light. However, practical SWG implementations are limited by fabrication constraints, such as minimum feature size. Here, we present a new nanophotonic waveguide grating concept that exploits phase-matching engineering to suppress diffraction effects for a period three times larger than those with SWG approaches. This long-period grating not only facilitates fabrication, but also enables a new diffraction-less regime with additional degrees of freedom to control light propagation. More specifically, the proposed phase-matching engineering enables selective diffraction suppression, providing new tools to shape propagation in the grating. We harness this flexible diffraction control to yield single-mode propagation in, otherwise, highly multimode waveguides, and to implement Bragg filters that combine highly-diffractive and diffraction-less regions to dramatically increase light rejection. Capitalizing on this new concept, we experimentally demonstrate a Si membrane Bragg filter with record rejection value exceeding 60 dB. These results demonstrate the potential of the proposed long-period grating for the engineering of diffraction in nanophotonic waveguides and pave the way for the development of a new generation of high-performance Si photonics devices.

Polarization- and wavelength-agnostic nanophotonic beam splitter.

High-performance optical beam splitters are of fundamental importance for the development of advanced silicon photonics integrated circuits. However, due to the high refractive index contrast of silicon-on-insulator platforms, state-of-the-art nanophotonic splitters are hampered by trade-offs in bandwidth, polarization dependence and sensitivity to fabrication errors. Here, we present a new strategy that exploits modal engineering in slotted waveguides to overcome these limitations, enabling ultra-broadband polarization-insensitive optical power splitters with relaxed fabrication tolerances. The proposed splitter design relies on a single-mode slot waveguide that is gradually transformed into two strip waveguides by a symmetric taper, yielding equal power splitting. Based on this concept, we experimentally demonstrate -3 ± 0.5 dB polarization-independent transmission for an unprecedented 390 nm bandwidth (1260-1650 nm), even in the presence of waveguide width deviations as large as ±25 nm.

Tailoring carbon nanotubes optical properties through chirality-wise silicon ring resonators.

Semiconducting single walled carbon nanotubes (s-SWNT) have an immense potential for the development of active optoelectronic functionalities in ultra-compact hybrid photonic circuits. Specifically, s-SWNT have been identified as a very promising solution to implement light sources in the silicon photonics platform. Still, two major challenges remain to fully exploit the potential of this hybrid technology: the limited interaction between s-SWNTs and Si waveguides and the low quantum efficiency of s-SWNTs emission. Silicon micro-ring resonators have the potential capability to overcome these limitations, by providing enhanced light s-SWNT interaction through resonant light recirculation. Here, we demonstrate that Si ring resonators provide SWNT chirality-wise photoluminescence resonance enhancement, releasing a new degree of freedom to tailor s-SWNT optical properties. Specifically, we show that judicious design of the micro-ring geometry allows selectively promoting the emission enhancement of either (8,6) or (8,7) SWNT chiralities present in a high-purity polymer-sorted s-SWNT solution. In addition, we present an analysis of nanometric-sized silicon-on-insulator waveguides that predicts stronger light s-SWNT interaction for transverse-magnetic (TM) modes than for conventionally used transverse-electric (TE) modes.

Narrow-linewidth carbon nanotube emission in silicon hollow-core photonic crystal cavity.

Polymer-sorted semiconducting single-walled carbon nanotubes (SWNTs) provide room-temperature emission at near-infrared wavelengths, with potential for large volume production of high-quality solutions and wafer-scale deposition. These features make SWNTs a very attractive material for the realization of on-chip light sources. Coupling SWNT into optical microcavities could enhance and guide their emission, while enabling spectral selection by cavity resonance engineering. This could allow the realization of bright, narrowband sources. Here, we report the first demonstration of coupling SWNTs into the resonant modes of Si hollow-core photonic crystal cavities. We exploit the strong evanescent field in these resonators to interact with SWNT emission, coupling it into an integrated access waveguide. Based on this concept, we demonstrate narrowband SWNT emission resonantly coupled into a Si bus waveguide with a full width at half-maximum of 0.34 nm and an off-resonance rejection exceeding 5 dB.

Controlling leakage losses in subwavelength grating silicon metamaterial waveguides.

Subwavelength gratings (SWG) are photonic structures with a period small enough to suppress diffraction, thereby acting as artificial dielectric materials, also called all-dielectric metamaterials. This property has been exploited in many high-performance photonic integrated devices in the silicon-on-insulator (SOI) platform. While SWG waveguides are theoretically lossless, they may exhibit leakage penalty to the substrate due to a combination of reduced modal confinement and finite thickness of the buried oxide (BOX) layer. In this Letter, for the first time, to the best of our knowledge, we analyze substrate leakage losses in SWG waveguides. We establish a direct relation between the effective index of the waveguide mode and the leakage losses which, remarkably, is independent of the geometric parameters of the SWG waveguide. This universal relation is demonstrated both numerically and experimentally, and it provides practical design guidelines to mitigate leakage losses. For BOX thicknesses of 2 and 3 µm, we find negligible leakage losses when the mode effective index is higher than 1.65 and 1.55, respectively.