RESUMEN
We measured the absorption recovery times in reverse biased AlInGaAs multiple quantum well material designed to emit at around 1.5 µm wavelength. Absorption recovery times as low as 2.5 ps were found at -4V bias, with values below 5 ps consistently found for biases above 3 V. The short absorption recovery times obtained under reverse bias were confirmed by using cross-absorption modulation in the material to demonstrate wavelength conversion of a 10 GHz pulse train, showing both up and down conversion of the incident pulses.
RESUMEN
We describe a new technique for random surface texturing of a gallium nitride (GaN) light-emitting diode wafer through a mask-less dry etch process. This involves depositing a sub-monolayer film of silica nanospheres (typical diameter of 200 nm) and then subjecting the coated wafer to a dry etch process with enhanced physical bombardment. The silica spheres acting as nanotargets get sputtered and silica fragments are randomly deposited on the GaN epi-layer. Subsequently, the reactive component of the dry etch plasma etches through the exposed GaN surface. Silica fragments act as nanoparticles, locally masking the underlying GaN. The etch rate is much reduced at these sites and consequently a rough topography develops. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) inspections show that random topographic features at the scale of a few tens of nanometres are formed. Optical measurements using angle-resolved photoluminescence show that GaN light-emitting diode material thus roughened has the capability to extract more light from within the epilayers.
RESUMEN
We characterized the reflectivity and the modal discrimination of intracavity reflectors (ICRs) with different numbers of slots and presented harmonic mode-locking operation of a monolithic semiconductor laser comprising a compound cavity formed by a single deeply etched slot ICR fabricated from 1.55 µm AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8 GHz repetition rate with a pulse duration of 1.67 ps and a time-bandwidth product of 0.81.
RESUMEN
At higher frequencies (visible and infrared) both the dimensions and the individual metal properties play an important role in determining the resonant response of arrays of SRRs. As a result, a substantial difference between the responses of gold- and Al-based SRR arrays has been observed. Additionally, deposition of gold SRRs onto a substrate typically involves the use of an additional adhesion layer. Titanium (Ti) is the most common adhesive thin-film material used to attach gold onto dielectric/semiconductor substrates. In this paper we investigate the impact of the Ti adhesion layer on the overall response of Au-based nano-scale SRRs. The results quantify the extent to which the overall difference in the resonance frequencies between Au- and Al-based SRRs is due to the presence of the Ti. We show that even a 2-nm-thick Ti layer can red-shift the position of SRR resonance by 20 nm. Finally, we demonstrate that by intentional addition of titanium in the Au-based SRRs, their overall resonant response can be tuned widely in frequency, but at the expense of resonance magnitude.
