1.
Opt Express
; 22(1): 1172-80, 2014 Jan 13.
Artículo
en Inglés
| MEDLINE
| ID: mdl-24515077
RESUMEN
We demonstrate a laser for the silicon photonics platform by hybrid integration with a III/V reflective semiconductor optical amplifier coupled to a 220 nm silicon-on-insulator half-cavity. We utilize a novel ultra-thin silicon edge coupler. A single adiabatic microring based inline reflector is used to select a lasing mode, as compared to the multiple rings and Bragg gratings used in many previous results. Despite the simplified design, the laser was measured to have on-chip 9.8 mW power, less than 220 KHz linewidth, over 45 dB side mode suppression ratio, less than -135 dB/Hz relative intensity noise, and 2.7% wall plug efficiency.