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1.
Opt Express ; 31(20): 33475-33485, 2023 Sep 25.
Artículo en Inglés | MEDLINE | ID: mdl-37859129

RESUMEN

In this work we perform a theoretical and simulation analysis of the behavior of an integrated four section distributed Bragg reflector semiconductor laser under optical injection and Q-switching operation. An electro-absorption modulator is introduced into the laser cavity to control the total losses and perform Q-switching. The simulations are done using a rate equation model. Q-switching operation produces very short and high power pulses. This, together with the use of optical injection, allows obtaining flat and broad optical frequency combs with up to 2100 optical lines within 10 dB (642 lines within 3 dB) at a repetition frequency of 100 MHz. The high chirp of the pulses is responsible for the broad spectra of these combs in comparison with gain switched combs, and the device structure allows fabrication in commercial foundries using standard building blocks.

2.
Opt Express ; 20(20): 22481-9, 2012 Sep 24.
Artículo en Inglés | MEDLINE | ID: mdl-23037397

RESUMEN

We propose a pulse shaping and shortening technique for pulses generated from gain switched single mode semiconductor lasers, based on a Mach Zehnder interferometer with variable delay. The spectral and temporal characteristics of the pulses obtained with the proposed technique are investigated with numerical simulations. Experiments are performed with a Distributed Feedback laser and a Vertical Cavity Surface Emitting Laser, emitting at 1.5 µm, obtaining pulse duration reduction of 25-30%. The main asset of the proposed technique is that it can be applied to different devices and pulses, taking advantage of the flexibility of the gain switching technique.


Asunto(s)
Amplificadores Electrónicos , Diseño Asistido por Computadora , Interferometría/instrumentación , Láseres de Estado Sólido , Diseño de Equipo , Análisis de Falla de Equipo
3.
Opt Express ; 20(5): 4979-87, 2012 Feb 27.
Artículo en Inglés | MEDLINE | ID: mdl-22418302

RESUMEN

A new method for measuring the linewidth enhancement factor (α-parameter) of semiconductor lasers is proposed and discussed. The method itself provides an estimation of the measurement error, thus self-validating the entire procedure. The α-parameter is obtained from the temporal profile and the instantaneous frequency (chirp) of the pulses generated by gain switching. The time resolved chirp is measured with a polarization based optical differentiator. The accuracy of the obtained values of the α-parameter is estimated from the comparison between the directly measured pulse spectrum and the spectrum reconstructed from the chirp and the temporal profile of the pulse. The method is applied to a VCSEL and to a DFB laser emitting around 1550 nm at different temperatures, obtaining a measurement error lower than ± 8%.


Asunto(s)
Análisis de Falla de Equipo/instrumentación , Análisis de Falla de Equipo/métodos , Láseres de Semiconductores , Diseño de Equipo
4.
Opt Express ; 19(11): 10805-12, 2011 May 23.
Artículo en Inglés | MEDLINE | ID: mdl-21643337

RESUMEN

We present a novel implementation of the "phase reconstruction using optical ultra fast differentiation" (PROUD) technique and apply it to characterize the time resolved chirp of a gain switched semiconductor laser. The optical temporal differentiator is a fiber based polarization interferometer. The method provides a fast and simple recovery of the instantaneous frequency from two temporal intensity measurements, obtained by changing the spectral response of the interferometer. Pulses with different shapes and durations of hundreds of picoseconds are fully characterized in amplitude and phase. The technique is validated by comparing the measured pulse spectra with the reconstructed spectra obtained from the intensity and the recovered phase.

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