Achieving a Highly Stable Perovskite Photodetector with a Long Lifetime Fabricated via an All-Vacuum Deposition Process.

Hybrid organic-inorganic metal halide perovskites (HOIP) have become a promising visible light sensing material due to their excellent optoelectronic characteristics. Despite the superiority, overcoming the stability issue for commercialization remains a challenge. Herein, an extremely stable photodetector was demonstrated and fabricated with Cs0.06FA0.94Pb(I0.68Br0.32)3 perovskite by an all-vacuum process. The photodetector achieves a current density up to 1.793 × 10-2 A cm-2 under standard one sun solar illumination while maintaining a current density as low as 8.627 × 10-10 A cm-2 at zero bias voltage. The linear dynamic range (LDR) and transient voltage response were found to be comparable to the silicon-based photodetector (Newport 818-SL). Most importantly, the device maintains 95% of the initial performance after 960 h of incessant exposure under one sun solar illumination. The achievements of these outstanding results contributed to the all-vacuum deposition process delivering a film with high stability and good uniformity, which in turn delays the degradation process. The degradation mechanism is further investigated by impedance spectroscopy to reveal the charge dynamics in the photodetector under different exposure times.

A New Dioxasilepine-Aryldiamine Hybrid Electron-Blocking Material for Wide Linear Dynamic Range and Fast Response Organic Photodetector.

A new dioxasilepine and aryldiamine hybrid material DPSi-DBDTA is designed to act as the electron-blocking layer (EBL) for vacuum-processed organic photodetector (OPD). The O-Si-O-linked cyclic structure leads DPSi-DBDTA to have dipolar character, high LUMO, and good thermal and morphology stability suitable for vacuum deposition. An initial trial with C60-based single active layer OPD device manifests the superior capability of DPSi-DBDTA for dark current suppression compared to the typical aryldiamines. Here, the bare and MoO3-doped DPSi-DBDTA is further examined as EBLs for the visible light responsive OPD comprising DTDCPB/C70 bulk heterojunction (BHJ) as the active layer. In sync with the result of C60-based OPD, the low dark current density and high specific detectivity D* (7.085 × 1012 cm Hz1/2 W-1) are achieved. The device with 5% MoO3-doped EBL can exhibit a wide linear dynamic range (LDR) up to 154.166 dB, which is attributed to suppression of both dark current density and carrier recombination. Additionally, the devices also manifest fast time-resolved performance in both frequency and transient response measurements. Especially for the device with 20% MoO3-doped EBL, a wide cutoff frequency response 692.047 kHz and record-high transient response demonstrating ≤0.683 µs for transient photovoltage (TPV) and ≤0.478 µs for transient photocurrent (TPC) have been realized, which is possibly owing to the balance of mobility that mitigates the damage from traps. Such submicrosecond response is comparable with the state-of-the-art perovskite-PDs and Si-PDs.