RESUMEN
Dielectric ceramics with a high energy storage capacity are key to advanced pulsed power capacitors. However, conventional materials face a mutual constraint between polarization strength and the breakdown strength bottleneck. To address this limitation, the concept of nanograined high-entropy ceramics is introduced in this work. By introducing a large number of constituent elements into the A-site of perovskite material lattice, high-entropy (Bi0.2K0.2Ba0.2Sr0.2Ca0.2)TiO3-0.2 'CuO relaxor ceramic with nanoscale grains have been successfully prepared, which breaks the mutual constraint between polarization strength and breakdown strength bottleneck and results a recoverable energy density (Wrec ⼠6.86 J/cm3) and an efficiency (η ⼠87.7%) at 670 kV/cm. Moreover, its excellent stability makes it potentially useful under a variety of extreme conditions, including at high temperatures and high/low frequencies. These obtained results demonstrate that this nanograined high-entropy lead-free perovskite ceramic has great potential for energy storage applications.
RESUMEN
The leakage behavior of ferroelectric film has an important effect on energy storage characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at different temperatures can effectively improve its wide-temperature storage performance. Here, the structures of a 1 mol% SiO2-doped BaZr0.35Ti0.65O3 (BZTS) layer sandwiched between two undoped BaZr0.35Ti0.65O3 (BZT35) layers was demonstrated, and the leakage mechanism was analyzed compared with BZT35 and BZTS single-layer film. It was found that interface-limited conduction of Schottky (S) emission and the Fowler-Nordheim (F-N) tunneling existing in BZT35 and BZTS films under high temperature and a high electric field are the main source of the increase of leakage current and the decrease of energy storage efficiency at high temperature. Only an ohmic conductive mechanism exists in the whole temperature range of BZT35/BZTS/BZT35(1:1:1) sandwich structure films, indicating that sandwich multilayer films can effectively simulate the occurrence of interface-limited conductive mechanisms and mention the energy storage characteristics under high temperature.
RESUMEN
Industry has been seeking a thin-film capacitor that can work at high temperature in a harsh environment, where cooling systems are not desired. Up to now, the working temperature of the thin-film capacitor is still limited up to 200 °C. Herein, we design a multilayer structure with layers of paraferroelectric (Ba0.3Sr0.7TiO3, BST) and relaxor ferroelectric (0.85BaTiO3-0.15Bi(Mg0.5Zr0.5)O3, BT-BMZ) to realize optimum properties with a flat platform of dielectric constant and high breakdown strength for excellent energy storage performance at high temperature. Through optimizing the multilayer structure, a highly stable relaxor ferroelectric state is obtained for the BST/BT-BMZ multilayer thin-film capacitor with a total thickness of 230 nm, a period number N = 8, and a layer thickness ratio of BST/BT-BMZ = 3/7. The optimized multilayer film shows significantly improved energy storage density (up to 30.64 J/cm3) and energy storage efficiency (over 70.93%) in an ultrawide temperature range from room temperature to 250 °C. Moreover, the multilayer system also exhibits excellent thermal stability in such an ultrawide temperature range with a change of 5.15 and 12.75% for the recoverable energy density and energy storage efficiency, respectively. Our results demonstrate that the designed thin-film capacitor is promising for the application in a harsh environment and open a way to tailor a thin-film capacitor toward higher working temperature with enhanced energy storage performance.
