Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 4 de 4
Filtrar
Más filtros










Base de datos
Intervalo de año de publicación
1.
ACS Nano ; 12(6): 5753-5760, 2018 Jun 26.
Artículo en Inglés | MEDLINE | ID: mdl-29733575

RESUMEN

Advances in nanomechanics within recent years have demonstrated an always expanding range of devices, from top-down structures to appealing bottom-up MoS2 and graphene membranes, used for both sensing and component-oriented applications. One of the main concerns in all of these devices is frequency noise, which ultimately limits their applicability. This issue has attracted a lot of attention recently, and the origin of this noise remains elusive to date. In this article we present a very simple technique to measure frequency noise in nonlinear mechanical devices, based on the presence of bistability. It is illustrated on silicon-nitride high-stress doubly clamped beams, in a cryogenic environment. We report on the same T/ f dependence of the frequency noise power spectra as reported in the literature. But we also find unexpected damping fluctuations, amplified in the vicinity of the bifurcation points; this effect is clearly distinct from already reported nonlinear dephasing and poses a fundamental limit on the measurement of bifurcation frequencies. The technique is further applied to the measurement of frequency noise as a function of mode number, within the same device. The relative frequency noise for the fundamental flexure δ f/ f0 lies in the range 0.5-0.01 ppm (consistent with the literature for cryogenic MHz devices) and decreases with mode number in the range studied. The technique can be applied to any type of nanomechanical structure, enabling progress toward the understanding of intrinsic sources of noise in these devices.

2.
Phys Rev Lett ; 114(16): 165301, 2015 Apr 24.
Artículo en Inglés | MEDLINE | ID: mdl-25955054

RESUMEN

We report the results of flow experiments in which two chambers containing solid ^{4}He are connected by a superfluid Vycor channel. At low temperatures and pressures, mechanically squeezing the solid in one chamber produced a pressure increase in the second chamber, a measure of mass transport through our solid-superfluid-solid junction. This pressure response is very similar to the flow seen in recent experiments at the University of Massachusetts: it began around 600 mK, increased as the temperature was reduced, then decreased dramatically at a temperature, T_{d}, which depended on the ^{3}He impurity concentration. Our experiments indicate that the flow is limited by mass transfer across the solid-liquid interface near the Vycor ends, where the ^{3}He collects at low temperature, rather than by flow paths within the solid ^{4}He.

3.
Phys Rev Lett ; 111(11): 119602, 2013 Sep 13.
Artículo en Inglés | MEDLINE | ID: mdl-24074125
4.
Phys Rev Lett ; 110(3): 035301, 2013 Jan 18.
Artículo en Inglés | MEDLINE | ID: mdl-23373930

RESUMEN

When submitted to large stresses at high temperature, usual crystals may irreversibly deform. This phenomenon is known as plasticity and it is due to the motion of crystal defects such as dislocations. We have discovered that, in the absence of impurities and in the zero temperature limit, helium 4 crystals present a giant plasticity that is anisotropic and reversible. Direct measurements on oriented single crystals show that their resistance to shear nearly vanishes in one particular direction because dislocations glide freely parallel to the basal planes of the hexagonal structure. This plasticity disappears as soon as traces of helium 3 impurities bind to the dislocations or if their motion is damped by collisions with thermal phonons.

SELECCIÓN DE REFERENCIAS
DETALLE DE LA BÚSQUEDA