High-power sampled-grating-based master oscillator power amplifier system with 23.5 nm wavelength tuning around 970 nm.

Tunable high-power diode lasers are key components in various established and emerging applications. In this work, we present a compact hybrid master oscillator power amplifier (MOPA) laser system. The system utilizes a tunable GaAs-based sampled-grating (SG) distributed Bragg reflector (DBR) laser as the master oscillator (MO), which emits around a wavelength of 970 nm in a single longitudinal mode with a spectral width below 20 pm. The SG-DBR laser consists of two SGs, each of which can be thermally tuned with microheaters. By tuning one of the two SGs, a discrete wavelength tuning of 21.1 nm can be obtained with a Vernier mode spacing of about 2.3 nm. By tuning both SGs, 23.5 nm of quasi-continuous tuning is obtained, with a mode spacing of about 115 pm. The coupling of the beam emitted by the MO into a tapered power amplifier provides an amplified output power in the watt range having a nearly diffraction-limited beam with a propagation factor of M1/e22=1.6. The combination of high power and wide wavelength tuning in a compact system makes this light source ideal for, among other things, nonlinear frequency conversion.

Watt-level second-harmonic generation at 589 nm with a PPMgO:LN ridge waveguide crystal pumped by a DBR tapered diode laser.

A DBR tapered diode laser in continuous wave operation was used to generate second-harmonic radiation at 589 nm in a PPMgO:LN ridge waveguide crystal. An optical output power of 0.86 W at an optical-to-optical and an electrical-to-optical efficiency of 42% and 11%, respectively, was achieved. The visible radiation was characterized by a spectral bandwidth ΔνFWHM of 230 MHz and a beam propagation parameter M1/e22 better than 1.1. The integration of such a system into a housing of a small footprint will enable a portable and highly efficient module featuring a visible output power in the watt-level range.

Single-mode master-oscillator power amplifier at 647 nm with more than 500 mW output power.

Using an AlGaInP-based truncated tapered power amplifier, it was possible to boost the output power of a 647-nm distributed Bragg reflector laser from 50 mW to more than 500 mW. The light source has the potential to replace bulky Kr ion lasers still in use at this wavelength.

High-power diode lasers at 1178 nm with high beam quality and narrow spectra.

High-power distributed Bragg reflector tapered diode lasers (DBR-TPLs) at 1180 nm were developed based on highly strained InGaAs quantum wells. The lasers emit a nearly diffraction-limited beam with more than two watts with a narrow spectral width. These features are believed to make this type of diode laser a key component for the manufacturing of miniaturized laser modules in the yellow and orange spectral range by second-harmonic generation to cover a spectral region currently not accessible with direct emitting diode lasers. Future applications might be the laser-cooling of sodium, high-resolution glucose-content measurements, as well as spectroscopy on rare earth elements.

Monolithic 626 nm single-mode AlGaInP DBR diode laser.

Single-mode lasers below 630 nm are still realized using complex laser systems. We present distributed Bragg reflector (DBR) ridge waveguide lasers (RWL) based on AlGaInP. When packaged into sealed TO-3 housings and cooled internally to about 0°C the DBR-RWL emit more than 50 mW at a wavelength of 626.0 nm into a nearly diffraction-limited single longitudinal mode with a spectral width below 1 MHz. These new monolithic diode lasers have the potential to drastically miniaturize existing set-ups e.g. for quantum information processing.

96 mW longitudinal single mode red-emitting distributed Bragg reflector ridge waveguide laser with tenth order surface gratings.

Red-emitting ridge waveguide lasers with integrated tenth order surface distributed Bragg reflector gratings were developed. The grating was implemented by the use of a BCl3-Ar-plasma, while the shape of the grating trench was controlled by additional He-backside cooling of the wafer. The devices exhibit longitudinal single mode operation up to 96 mW at 635.3 nm with a side mode suppression ratio of 18 dB and a good beam quality of M2<3. The spectrum is free of mode hops for a span of more than 55 pm.

High-power distributed Bragg reflector ridge-waveguide diode laser with very small spectral linewidth.

We manufactured and investigated distributed Bragg reflector ridge-waveguide diode lasers having sixth-order surface gratings and an emission wavelength around 974 nm. The single-mode output power of the lasers with a total length of 4 mm exceeded 1 W. A very small spectral linewidth of 1.4 MHz (3 dB) consisting of a Lorentzian part of 146 kHz and a Gaussian part of 1308 MHz was measured using a self-delayed heterodyne measurement technique.