RESUMEN
Miniaturized organic single-crystal arrays that are addressed by reading-out circuits are crucial for high performance and high-level integration organic electronics. Here, we report a lithography compatible strategy to fabricate organic single-crystal arrays via area-selective growth and solvent vapor annealing (SVA). The organic semiconducting molecules can first selectively grow on photographically patterned drain-source electrodes, forming ordered amorphous aggregates that can further be converted to discrete single-crystal arrays by SVA. This strategy can be applied to self-align the microsized organic single crystals on predesigned locations. With this method, suppression of cross-talk among devices, organic field-effect transistors, and basic logic gate arrays with reading-out electrodes are further demonstrated.
RESUMEN
A general concept for parallel near-field photochemical and radiation-induced chemical processes for the fabrication of nanopatterns of a self-assembled monolayer (SAM) of (3-aminopropyl)triethoxysilane (APTES) is explored with three different processes: 1) a near-field photochemical process by photochemical bleaching of a monomolecular layer of dye molecules chemically bound to an APTES SAM, 2) a chemical process induced by oxygen plasma etching as well as 3) a combined near-field UV-photochemical and ozone-induced chemical process, which is applied directly to an APTES SAM. All approaches employ a sandwich configuration of the surface-supported SAM, and a lithographic mask in form of gold nanostructures fabricated through colloidal sphere lithography (CL), which is either exposed to visible light, oxygen plasma or an UV-ozone atmosphere. The gold mask has the function to inhibit the photochemical reactions by highly localized near-field interactions between metal mask and SAM and to inhibit the radiation-induced chemical reactions by casting a highly localized shadow. The removal of the gold mask reveals the SAM nanopattern.
