Low-power-consumption modulation of short-cavity DBR laser on SiO2/Si substrate.

We developed short-active-length distributed Bragg reflector (DBR) lasers to reduce the power consumption of chip-to-chip optical interconnects. These lasers have buried bulk InGaAsP waveguides to increase the coupling efficiency between the active region and DBR to 99.79% from the 98.14% of our previous DBR lasers that had InP channel waveguides. We achieved continuous wave operation of 5- to 80-µm active-length DBR lasers and the 5-µm-long laser consumed 24 fJ/bit with a 10-Gbps NRZ signal. The threshold current of the 5-µm laser was 51 µA, which compares favorably to our previous 10-µm DBR lasers with a threshold current of 170 µA.

Cross-gain modulation-based photonic reservoir computing using low-power-consumption membrane SOA on Si.

We demonstrate photonic reservoir computing (RC) utilizing cross-gain modulation (XGM) in a membrane semiconductor optical amplifier (SOA) on a Si platform. The membrane SOA's features of small active volume and strong optical confinement enable low-power nonlinear operation of the reservoir, with 101-mW-scale power consumption and 102-µW-scale optical input power. The power consumption is about an order of magnitude lower than that of conventional SOAs that exhibit saturable nonlinearity. The XGM-based reservoir is configured by injecting a delayed feedback signal into the SOA from a direction opposite to the input signal. This configuration provides robust operation of the feedback circuit because of the phase insensitivity and the elimination of loop oscillation risk. The RC performance is evaluated via the information processing capacity (IPC) and a nonlinear benchmark task. It is revealed that the XGM-based reservoir performs strong nonlinear transformation of input time-series signals. The series of results consistently show that the membrane SOA performs RC-applicable nonlinear operations through XGM at a low power scale.

Heterogeneously integrated widely tunable laser using lattice filter and ring resonator on Si photonics platform.

We fabricated a tunable laser consisting of a Si lattice filter, a Si ring resonator, and a III-V gain region. The lattice filter, a cascade of interferometers with the same delay length, has periodic transmission peaks with a wide free spectral range (FSR). By connecting the lattice filter to a ring resonator with a narrow FSR, the lasing mode is selected from one of the resonance modes of the ring resonator. The lasing wavelength can be tuned by changing the transmission peak wavelength of the lattice filter, in which an integrated micro heater controls the refractive index of the longer or shorter arm. Since the length of the refractive index control region on both arms of the lattice filter can be extended while maintaining a wide FSR, a wide tuning range can be obtained. This laser facilitates the control of the lasing wavelength because of the simple configuration. The Si lattice filter and the Si ring resonator were fabricated on a Si photonics platform by a Si photonics foundry, and III-V gain region was heterogeneously integrated. The lasing wavelength is shifted to a longer (shorter) one by heating the longer (shorter) arm of the lattice filter, in which the tuning wavelength is 1529 to 1561 nm and side-mode suppression ratio is more than 40 dB. A Lorentzian linewidth for lasing wavelengths narrower than 40 kHz is also demonstrated.

Optical links on silicon photonic chips using ultralow-power consumption photonic-crystal lasers.

Ultrashort-distance optical interconnects are becoming increasingly important due to continuous improvements in servers and high-performance computers. As light sources in such interconnects, directly modulated semiconductor lasers with an ultrasmall active region are promising. In addition, using Si waveguides is important to provide low loss optical links with functions such as wavelength filtering and switching. In this paper, we demonstrate a wafer-scale heterogeneous integration of lambda-scale embedded active-region photonic-crystal (LEAP) lasers and Si waveguides, achieved through precise alignment. We numerically and experimentally demonstrated the coupling design between the LEAP lasers and Si waveguides; it is important to match propagation constants of Si waveguides and wavenumber of the optical cavity modes. The LEAP lasers exhibit an ultralow threshold current of 13.2-µA and 10-Gbit/s direct modulation. We also achieved the first data transmission using an optical link consisting of a LEAP laser, Si waveguide, and photodetector and obtained an averaged eye diagram at a bit rate of 10 Gbit/s with a bias current of 150 µA.

Integration of a high-efficiency Mach-Zehnder modulator with a DFB laser using membrane InP-based devices on a Si photonics platform.

We demonstrate a wafer-level integration of a distributed feedback laser diode (DFB LD) and high-efficiency Mach-Zehnder modulator (MZM) using InGaAsP phase shifters on Si waveguide circuits. The key to integrating materials with different bandgaps is to combine direct wafer bonding of a multiple quantum well layer for the DFB LD and regrowth of a bulk layer for the phase shifter. Buried regrowth of an InP layer is also employed to define the waveguide cores for the LD and phase shifters on a Si substrate. Both the LD and phase shifters have 230-nm-thick lateral diodes, whose thickness is less than the critical thickness of the III-V compound semiconductor layers on the Si substrate. The fabricated device has a 500-µm-long DFB LD and 500-µm-long carrier-depletion InGaAsP-bulk phase shifters, which provide a total footprint of only 1.9 × 0.31 mm2. Thanks to the low losses of the silica-based fiber couplers, InP/Si narrow tapers, and the phase shifters, the fiber-coupled output power of 3.2 mW is achieved with the LD current of 80 mA. The MZM has a VπL of around 0.4 Vcm, which overcomes the VπL limit of typical carrier-depletion Si MZMs. Thanks to the high modulation efficiency, the device shows an extinction ratio of 5 dB for 50-Gbit/s NRZ signal with a low peak-to-peak voltage of 2.5 V, despite the short phase shifters and single-arm driving.

Membrane buried-heterostructure DFB laser with an optically coupled III-V/Si waveguide.

We have developed a membrane buried-heterostructure (BH) distributed feedback (DFB) laser consisting of an optically coupled III-V/Si waveguide and SiN surface grating. A 230-nm-thick membrane III-V layer enables us to construct an optical supermode in a 220-nm-thick Si waveguide and control the optical confinement factor in both the III-V and Si layers by changing Si waveguide width. This makes it possible to use a conventional Si photonics platform because the Si waveguides widely used on it are around 220-nm thick. To fabricate the BH-the key component for constructing a membrane laser with a lateral current-injection structure-we used direct wafer bonding and regrowth by metalorganic vapor phase epitaxy. Light output from the DFB laser is transferred to the Si waveguide through a short inverse-taper InP waveguide. A fiber-chip interface constructed by using inverse-taper Si waveguides and SiOx waveguides provides 2-dB fiber coupling loss. Fiber coupling power of 7.9 mW is obtained with a λ/4-shifted DFB laser with a 500-µm-long cavity. Single-mode lasing with a side-mode suppression ratio of 50 dB and lasing up to 120°C are also demonstrated.

Membrane InGaAsP Mach-Zehnder modulator with SiN:D waveguides on Si platform.

A high-efficiency InGaAsP Mach-Zehnder modulator is integrated with hydrogen-free deuterated silicon nitride (SiN:D) waveguide circuits on a Si substrate. A thin InP-based layer provides a high optical confinement factor of around 50% and enables easy optical coupling to the SiN:D waveguides, which are fabricated by a low-temperature backend process. The fabricated Mach-Zehnder modulator with a 300-µm-long phase shifter shows a VπL of 0.4 Vcm, insertion loss of ~4.5 dB, and an error-free operation for 40-Gbit/s non-return-to-zero signal.

Room temperature continuous-wave nanolaser diode utilized by ultrahigh-Q few-cell photonic crystal nanocavities.

Few-cell point-defect photonic crystal (PhC) nanocavities (such as LX and H1 type cavities), have several unique characteristics including an ultra-small mode volume (Vm), a small device footprint advantageous for dense integration, and a large mode spacing advantageous for high spontaneous-emission coupling coefficient (ß), which are promising for energy-efficient densely-integratable on-chip laser light sources enhanced by the cavity QED effect. To achieve this goal, a high quality factor (Q) is essential, but conventional few-cell point-defect cavities do not have a sufficiently high Q. Here we adopt a series of modified designs of LX cavities with a buried heterostructure (BH) multi-quantum-well (MQW) active region that can achieve a high Q while maintaining their original advantages and fabricate current-injection laser devices. We have successfully observed continuous-wave (CW) lasing in InP-based L1, L2, L3 and L5 PhC nanocavities at 23°C with a DC current injection lower than 10 µA and a bias voltage lower than 0.9 V. The active volume is ultra-small while maintaining a sufficiently high confinement factor, which is as low as ~10-15 cm3 for a single-cell (L1) nanocavity. This is the first room-temperature current-injection CW lasing from any types of few-cell point-defect PhC nanocavities (LX or H1 types). Our report marks an important step towards realizing a nanolaser diode with a high cavity-QED effect, which is promising for use with on-chip densely integrated laser sources in photonic networks-on-chip combined with CMOS processors.

Twin-mirror membrane distributed-reflector lasers using 20-µm-long active region on Si substrates.

We demonstrate 20-µm-long twin-mirror membrane distributed-reflector (DR) lasers for chip-to-chip optical interconnects. The lasers employ distributed Bragg reflectors (DBRs) at both ends of a 20-µm-long λ/4-phase shifted distributed feedback (DFB) section. We achieve single-mode lasing in a λ/4-phase shifted DFB mode at room temperature with a threshold current of 0.39 mA. The lasing wavelength remains stable while the injected current is varied, and it is determined by the λ/4 phase-shifted DFB. The modulation current efficiency is 11.4 GHz/mA1/2, which is measured by using relative intensity noise spectra. We also demonstrate the direct modulation of the DR lasers at a bit rate of 25.8 Gbit/s with an energy cost of 163 fJ/bit.

Membrane distributed-reflector laser integrated with SiOx-based spot-size converter on Si substrate.

We demonstrate monolithic integration of a 50-µm-long-cavity membrane distributed-reflector laser with a spot-size converter, consisting of a tapered InP wire waveguide and an SiOx waveguide, on SiO2/Si substrate. The device exhibits 9.4-GHz/mA0.5 modulation efficiency with a 2.2-dB fiber coupling loss. We demonstrate 25.8-Gbit/s direct modulation with a bias current of 2.5 mA, resulting in a low energy cost of 132 fJ/bit.

Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects.

We demonstrate the continuous-wave operation of lambda-scale embedded active-region photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The on-Si LEAP lasers exhibit a threshold current of 31 µA, which is the lowest reported value for any type of semiconductor laser on Si. This reveals the great potential of LEAP lasers as light sources for on- or off-chip optical interconnects with ultra-low power consumption in future information communication technology devices including CMOS processors.

Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer.

We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO2/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO2/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate high-efficiency lasers at a low cost.

Tuning of gate adsorption: modification of a flexible metal-organic framework by secondary organic ligands.

For realizing selective adsorption of targeted molecules, a flexible metal-organic framework (MOF) was modified with monodentate secondary ligands. Although the modified MOF retains CO2 adsorptivities with a vertical adsorption uptake, the material also shows gate adsorptivities of a specific gas molecule that the pristine MOF does not adsorb.

A fusion-spliced near-field optical fiber probe using photonic crystal fiber for nanoscale thermometry based on fluorescence-lifetime measurement of quantum dots.

We have developed a novel nanoscale temperature-measurement method using fluorescence in the near-field called fluorescence near-field optics thermal nanoscopy (Fluor-NOTN). Fluor-NOTN enables the temperature distributions of nanoscale materials to be measured in vivo/in situ. The proposed method measures temperature by detecting the temperature dependent fluorescence lifetimes of Cd/Se quantum dots (QDs). For a high-sensitivity temperature measurement, the auto-fluorescence generated from a fiber probe should be reduced. In order to decrease the noise, we have fabricated a novel near-field optical-fiber probe by fusion-splicing a photonic crystal fiber (PCF) and a conventional single-mode fiber (SMF). The validity of the novel fiber probe was assessed experimentally by evaluating the auto-fluorescence spectra of the PCF. Due to the decrease of auto-fluorescence, a six- to ten-fold increase of S/N in the near-field fluorescence lifetime detection was achieved with the newly fabricated fusion-spliced near-field optical fiber probe. Additionally, the near-field fluorescence lifetime of the quantum dots was successfully measured by the fabricated fusion-spliced near-field optical fiber probe at room temperature, and was estimated to be 10.0 ns.

Initial and long-term outcomes of sirolimus-eluting stents for calcified lesions compared with bare-metal stents.

The aim of this study was to compare the initial and long-term outcomes of sirolimus-eluting stents (SES) and bare-metal stents (BMS) in patients with calcified lesions without performing rotational atherectomy. The subjects were 79 consecutive lesions (38 in the SES group and 41 in the BMS group) which were confirmed to have superficially calcified lesions by intravascular ultrasound. In all lesions, the stent was implanted after predilatation with a balloon. The patient characteristics were not different between the 2 groups. All procedures were successfully performed in both groups. Vessel area was significantly smaller in the SES group than in the BMS group (11.01 +/- 3.88 mm(2) versus 13.08 +/- 3.49 mm(2), P < 0.005), as was the lumen area (5.41 +/- 2.31mm(2) versus 6.48 +/- 2.04 mm(2), P < 0.005). Minimum stent area was significantly smaller in the SES group than in the BMS group (5.61 +/- 1.54 mm(2) versus 6.69 +/- 1.74 mm(2), P < 0.01). In cases in whom angiographic follow-ups were performed, the late loss was significantly smaller in the SES group than in the BMS group (0.19 +/- 0.49 mm versus 0.76 +/- 0.48 mm, P < 0.001). The restenosis rate was significantly lower in the SES group than in the BMS group (8.8% versus 33.3%, P < 0.05) and the TLR rate tended to be lower in the SES group (7.9% versus 19.5%). Stent thrombosis was not observed in either group. The results suggest that SES are more effective than BMS and can be used safely when treating calcified lesions if predilatation with a balloon is possible.