High-resolution three-dimensional imaging of topological textures in nanoscale single-diamond networks.

Topological defects-extended lattice deformations that are robust against local defects and annealing-have been exploited to engineer novel properties in both hard and soft materials. Yet, their formation kinetics and nanoscale three-dimensional structure are poorly understood, impeding their benefits for nanofabrication. We describe the fabrication of a pair of topological defects in the volume of a single-diamond network (space group Fd 3 ¯ m) templated into gold from a triblock terpolymer crystal. Using X-ray nanotomography, we resolve the three-dimensional structure of nearly 70,000 individual single-diamond unit cells with a spatial resolution of 11.2 nm, allowing analysis of the long-range order of the network. The defects observed morphologically resemble the comet and trefoil patterns of equal and opposite half-integer topological charges observed in liquid crystals. Yet our analysis of strain in the network suggests typical hard matter behaviour. Our analysis approach does not require a priori knowledge of the expected positions of the nodes in three-dimensional nanostructured systems, allowing the identification of distorted morphologies and defects in large samples.

Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions.

We study the timescale of random telegraph noise (RTN) of nanomagnets in stochastic magnetic tunnel junctions (MTJs). From analytical and numerical calculations based on the Landau-Lifshitz-Gilbert and the Fokker-Planck equations, we reveal mechanisms governing the relaxation time of perpendicular easy-axis MTJs (p-MTJs) and in-plane easy-axis MTJs (i-MTJs), showing that i-MTJs can be made to have faster RTN. Superparamagnetic i-MTJs with small in-plane anisotropy and sizable perpendicular effective anisotropy show relaxation times down to 8 ns at negligible bias current, which is more than 5 orders of magnitude shorter than that of typical stochastic p-MTJs and about 100 times faster than the shortest time of i-MTJs reported so far. The findings give a new insight and foundation in developing stochastic MTJs for high-performance probabilistic computers.

Neuromorphic Spintronics.

Neuromorphic computing uses basic principles inspired by the brain to design circuits that perform artificial intelligence tasks with superior energy efficiency. Traditional approaches have been limited by the energy area of artificial neurons and synapses realized with conventional electronic devices. In recent years, multiple groups have demonstrated that spintronic nanodevices, which exploit the magnetic as well as electrical properties of electrons, can increase the energy efficiency and decrease the area of these circuits. Among the variety of spintronic devices that have been used, magnetic tunnel junctions play a prominent role because of their established compatibility with standard integrated circuits and their multifunctionality. Magnetic tunnel junctions can serve as synapses, storing connection weights, functioning as local, nonvolatile digital memory or as continuously varying resistances. As nano-oscillators, they can serve as neurons, emulating the oscillatory behavior of sets of biological neurons. As superparamagnets, they can do so by emulating the random spiking of biological neurons. Magnetic textures like domain walls or skyrmions can be configured to function as neurons through their non-linear dynamics. Several implementations of neuromorphic computing with spintronic devices demonstrate their promise in this context. Used as variable resistance synapses, magnetic tunnel junctions perform pattern recognition in an associative memory. As oscillators, they perform spoken digit recognition in reservoir computing and when coupled together, classification of signals. As superparamagnets, they perform population coding and probabilistic computing. Simulations demonstrate that arrays of nanomagnets and films of skyrmions can operate as components of neuromorphic computers. While these examples show the unique promise of spintronics in this field, there are several challenges to scaling up, including the efficiency of coupling between devices and the relatively low ratio of maximum to minimum resistances in the individual devices.

Spin-orbit torque switching of an antiferromagnetic metallic heterostructure.

The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructure. A comparison of electrical transport measurements in PtMn with and without the Pt layer, corroborated by x-ray imaging, reveals reversible switching of the thermally-stable antiferromagnetic Néel vector by spin-orbit torques. The presented results demonstrate the potential of polycrystalline metals for antiferromagnetic spintronics.

Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions.

Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin transfer torque and high thermal stability, along with a continuous reduction of junction size. Perpendicular easy-axis CoFeB/MgO stacks possessing interfacial anisotropy have paved the way down to 20-nm scale, below which a new approach needs to be explored. Here we show magnetic tunnel junctions that satisfy the requirements at ultrafine scale by revisiting shape anisotropy, which is a classical part of magnetic anisotropy but has not been fully utilized in the current perpendicular systems. Magnetization switching solely driven by current is achieved for junctions smaller than 10 nm where sufficient thermal stability is provided by shape anisotropy without adopting new material systems. This work is expected to push forward the development of magnetic tunnel junctions toward single-digit nm-scale nano-magnetics/spintronics.

A spin-orbit torque switching scheme with collinear magnetic easy axis and current configuration.

Spin-orbit torque, a torque brought about by in-plane current via the spin-orbit interactions in heavy-metal/ferromagnet nanostructures, provides a new pathway to switch the magnetization direction. Although there are many recent studies, they all build on one of two structures that have the easy axis of a nanomagnet lying orthogonal to the current, that is, along the z or y axes. Here, we present a new structure with the third geometry, that is, with the easy axis collinear with the current (along the x axis). We fabricate a three-terminal device with a Ta/CoFeB/MgO-based stack and demonstrate the switching operation driven by the spin-orbit torque due to Ta with a negative spin Hall angle. Comparisons with different geometries highlight the previously unknown mechanisms of spin-orbit torque switching. Our work offers a new avenue for exploring the physics of spin-orbit torque switching and its application to spintronics devices.

Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure.

A compact nonvolatile programmable switch (NVPS) using 90 nm CMOS technology together with perpendicular magnetic tunnel junction (p-MTJ) devices is fabricated for zero-standby-power field-programmable gate array. Because routing information does not change once it is programmed into an NVPS, high-speed read and write accesses are not required and a write-control transistor can be shared among all the NVPSs, which greatly simplifies structure of the NVPS. In fact, the effective area of the proposed NVPS is reduced by 40% compared to that of a conventional MTJ-based NVPS. The instant on/off behavior without external nonvolatile memory access is also demonstrated using the fabricated test chip.

Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents.

Current-induced magnetic domain wall motion is attractive for manipulating magnetization direction in spintronics devices, which open a new era of electronics. Up to now, in spite of a crucial significance to applications, investigation on a current-induced domain wall depinning probability, especially in sub-nano to a-few-nanosecond range has been lacking. Here we report on the probability of the depinning in perpendicularly magnetized Co/Ni nanowires in this timescale. A high depinning probability was obtained even for 2-ns pulses with a current density of less than 10¹² A m⁻². A one-dimensional Landau-Lifshitz-Gilbert calculation taking into account thermal fluctuations reproduces well the experimental results. We also calculate the depinning probability as functions of various parameters and found that parameters other than the coercive field do not affect the transition width of the probability. These findings will allow one to design high-speed and reliable magnetic devices based on the domain wall motion.

Current-induced magnetic domain wall motion below intrinsic threshold triggered by Walker breakdown.

Controlling the position of a magnetic domain wall with electric current may allow for new types of non-volatile memory and logic devices. To be practical, however, the threshold current density necessary for domain wall motion must be reduced below present values. Intrinsic pinning due to magnetic anisotropy, as recently observed in perpendicularly magnetized Co/Ni nanowires, has been shown to give rise to an intrinsic current threshold J(th)(0). Here, we show that domain wall motion can be induced at current densities 40% below J(th)(0) when an external magnetic field of the order of the domain wall pinning field is applied. We observe that the velocity of the domain wall motion is the vector sum of current- and field-induced velocities, and that the domain wall can be driven against the direction of a magnetic field as large as 2,000 Oe, even at currents below J(th)(0). We show that this counterintuitive phenomenon is triggered by Walker breakdown, and that the additive velocities provide a unique way of simultaneously determining the spin polarization of current and the Gilbert damping constant.

Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization.

Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.

Electrical control of the ferromagnetic phase transition in cobalt at room temperature.

Electrical control of magnetic properties is crucial for device applications in the field of spintronics. Although the magnetic coercivity or anisotropy has been successfully controlled electrically in metals as well as in semiconductors, the electrical control of Curie temperature has been realized only in semiconductors at low temperature. Here, we demonstrate the room-temperature electrical control of the ferromagnetic phase transition in cobalt, one of the most representative transition-metal ferromagnets. Solid-state field effect devices consisting of a ultrathin cobalt film covered by a dielectric layer and a gate electrode were fabricated. We prove that the Curie temperature of cobalt can be changed by up to 12 K by applying a gate electric field of about ±2 MV cm(-1). The two-dimensionality of the cobalt film may be relevant to our observations. The demonstrated electric field effect in the ferromagnetic metal at room temperature is a significant step towards realizing future low-power magnetic applications.

Observation of the intrinsic pinning of a magnetic domain wall in a ferromagnetic nanowire.

The spin transfer torque is essential for electrical magnetization switching. When a magnetic domain wall is driven by an electric current through an adiabatic spin torque, the theory predicts a threshold current even for a perfect wire without any extrinsic pinning. The experimental confirmation of this 'intrinsic pinning', however, has long been missing. Here, we give evidence that this intrinsic pinning determines the threshold, and thus that the adiabatic spin torque dominates the domain wall motion in a perpendicularly magnetized Co/Ni nanowire. The intrinsic nature manifests itself both in the field-independent threshold current and in the presence of its minimum on tuning the wire width. The demonstrated domain wall motion purely due to the adiabatic spin torque will serve to achieve robust operation and low energy consumption in spintronic devices.

Development of virtual histology and virtual biopsy using laser-scanning confocal microscopy.

The aim of this project is to acquire a direct image of histology from in vivo gastrointestinal mucosa. In other words, the task of 'endo-microscope' is to observe the cellular architecture of tissue in vivo during routine endoscopic examination. As the first step to completing this study, resected fresh specimens from the oesophagus. stomach and colon were examined by laser-scanning confocal microscopy (LCM) (Fluoview, Olympus, Tokyo). Fresh untreated mucosal specimens obtained by endoscopic pinch biopsy, polypectomy or endoscopic mucosal resection were collected and placed in normal saline and examined by LCM, collecting the reflective light of a 488-nm wavelength argon laser beam. As the second step, a probe-type LCM 'endo-microscope' was designed and applied to observe the human oral-cavity mucosa. The probe has 4.5-mm outer diameter and 20-cm length, which enables easy access to oral cavity mucosa. The estimated special resolution of the probe is 1-5 microm. A real-time microscopic image directly from ex vivo fresh specimens was acquired. The acquired LCM images corresponded well with the conventional H-E light microscopic images. Cell wall, nucleus and cytoplasm were simultaneously visualized by LCM scanning. This novel method enables serial imaginary microscopic sections on fresh specimens. In addition, a probe-type LCM 'endo-microscope' was designed and was applied to observe human oral cavity mucosa. Virtual histological images from the living oral squamous cell were successfully obtained. LCM images from ex vivo fresh specimens demonstrated the features of the H-E staining histological image. In the next step to accomplish our project, we developed a LCM probe with 4.5-mm outer diameter to obtain a virtual image of human oral cavity mucosa.

The alpha and gamma subunit-dependent effects of local anesthetics on recombinant GABA(A) receptors.

Although convulsions due to local anesthetic systemic toxicity are thought to be due to inhibition of GABA(A) receptor-linked currents in the central nervous system, the mechanism of action remains unclear. We therefore examined the effects of local anesthetics on gamma-aminobutyric acid (GABA)-induced currents using recombinant GABA(A) receptors with specific combinations of subunits. Murine GABA(A) receptors were expressed by injection of cRNAs encoding each subunit into Xenopus oocytes. The effects of local anesthetics (lidocaine, bupivacaine, procaine and tetracaine) on GABA-induced currents of receptors expressing different subunit combinations (alpha1beta2, alpha1beta2gamma2s, alpha4beta2gamma2s and beta2) were examined via the two electrode voltage clamp method. At alpha1beta2, alpha1beta2gamma2s and alpha4beta2gamma2s GABA(A) receptors, all local anesthetics inhibited GABA-induced currents in a dose-dependent manner. The presence of the gamma2s subunit resulted in a greater inhibition by all local anesthetics, but the presence of the alpha4 subunit resulted in less inhibition. At beta2 homomeric receptors, local anesthetics directly induced an outward current similar to that of picrotoxin. These data indicated that (1) the alpha and gamma subunits of GABA(A) receptors modulated the inhibitory effects of local anesthetics on GABA(A) function, and (2) local anesthetics can activate the beta2 subunit and may block the GABA(A) receptor channel pore.

Mouse suppressor of fused is a negative regulator of sonic hedgehog signaling and alters the subcellular distribution of Gli1.

The Hedgehog (Hh) signaling pathway has critical functions during embryogenesis of both invertebrate and vertebrate species [1]; defects in this pathway in humans can cause developmental disorders as well as neoplasia [2]. Although the Gli1, Gli2, and Gli3 zinc finger proteins are known to be effectors of Hh signaling in vertebrates, the mechanisms regulating activity of these transcription factors remain poorly understood [3] [4]. In Drosophila, activity of the Gli homolog Cubitus interruptus (Ci) is likely to be modulated by its interaction with a cytoplasmic complex containing several other proteins [5] [6], including Costal2, Fused (Fu), and Suppressor of fused (Su(fu)), the last of which has been shown to interact directly with Ci [7]. We have cloned mouse Suppressor of fused (mSu(fu)) and detected its 4.5 kb transcript throughout embryogenesis and in several adult tissues. In cultured cells, mSu(fu) overexpression inhibited transcriptional activation mediated by Sonic hedgehog (Shh), Gli1 and Gli2. Co-immunoprecipitation of epitope-tagged proteins indicated that mSu(fu) interacts with Gli1, Gli2, and Gli3, and that the inhibitory effects of mSu(fu) on Gli1's transcriptional activity were mediated through interactions with both amino- and carboxy-terminal regions of Gli1. Gli1 was localized primarily to the nucleus of both HeLa cells and the Shh-responsive cell line MNS-70; co-expression with mSu(fu) resulted in a striking increase in cytoplasmic Gli1 immunostaining. Our findings indicate that mSu(fu) can function as a negative regulator of Shh signaling and suggest that this effect is mediated by interaction with Gli transcription factors.

The effects of a point mutation of the beta2 subunit of GABA(A) receptor on direct and modulatory actions of general anesthetics.

The gamma-aminobutyric acid type A receptor (GABA(A) receptor) sites involved in the direct and modulatory actions of general anesthetics remain to be elucidated. The mutation of tyrosine at position 157 in the beta2 GABA(A) receptor subunit was reported to reduce sensitivity to activation by GABA, but not pentobarbital. We examined whether this mutation of the beta2 subunit (Tyr157-->Phe) affects the direct and modulatory actions of other general anesthetics such as propofol and etomidate. Using the two-electrode voltage clamp method, we recorded Cl- current in Xenopus oocytes expressing alpha1beta2gamma2s and alpha1-mutated beta2gamma2s subunits. The mutation of the beta2 subunit reduced the apparent affinity for propofol. However, the mutation had no effect on both the direct actions of pentobarbital and etomidate or on the modulatory actions of pentobarbital, propofol and etomidate. These results suggest that unique loci may exist for the direct action of propofol and that the GABA binding site may not mediate the modulatory actions of general anesthetics at GABA(A) receptors.

Gamma subunit dependent modulation by nitric oxide (NO) in recombinant GABAA receptor.

The effect of nitric oxide (NO) on GABA induced Cl- current of recombinant GABAA receptors was studied. Either alpha 1 beta 2 gamma 2s or alpha 1 beta 2 subunit mRNAs synthesized from cDNA of mouse brain were injected into Xenopus oocytes and functional GABAA receptors were expressed. GABA-induced Cl- current was measured with the two electrode voltage clamp technique. The NO donor NOC-18 reduced the GABA-induced Cl- current in the alpha 1 beta 2 gamma 2s subunit receptor in a dose-dependent manner. In alpha 1,beta 2 subunit receptor, NOC-18 had no effects on GABA-induced currents at low concentrations but showed potentiation at high concentration. These effects were antagonized by the NO extinguisher, carboxy-PTIO. The cGMP analogue 8-Br-cGMP failed to induce NO-like effects. NO directly acts at the GABAA receptor and the gamma 2s subunit is involved in its action.

Kabuki make-up syndrome associated with West syndrome.

A Japanese boy with Kabuki make-up syndrome associated with West syndrome is reported. He developed periodic tonic spasms at 6 months of age while his electro-encephalogram also revealed hypsarrhythmia. Although only a few previously reported cases of Kabuki make-up syndrome have been associated with epilepsy, it is likely that epileptic seizures are another primary feature of Kabuki make-up syndrome.

[HELP syndrome and anesthetic management].

From January 1990 to December 1994, 24 parturients were diagnosed as having HELLP syndrome alone or combined with preeclampsia/eclampsia among 8,224 patients who were delivered at our institution. They consisted of 14 primiparous and 10 multiparous patients. Mean maternal age was 28.9 +/- 3.3 and gestational age was 34.8 +/- 5.6 weeks. Of 24 parturients, 8 had vaginal delivery and the remaining 16 were delivered by caesarean section. Serious maternal morbidity included eclampsia (n = 3), preeclampsia (n = 18), renal failure (n = 5), hydrothorax (n = 4), and DIC (n = 1). There was no maternal death. There were 3 intrauterine fetal deaths and two neonatal deaths. Perinatal deaths were 2 (0.9%, 2/26). Three caesarean sections were performed under general anesthesia, and 13 under spinal anesthesia. In cases with apparent bleeding tendency, spinal and epidural anesthesia should be avoided. In providing general anesthesia, hypertension should be controlled, and the uterus is preferably dilated before the delivery and contracted there-after.