Tailoring the dispersion behavior of silicon nanophotonic slot waveguides.

We investigate the chromatic dispersion properties of silicon channel slot waveguides in a broad spectral region centered at ~1.5 µm. The variation of the dispersion profile as a function of the slot fill factor, i.e., the ratio between the slot and waveguide widths, is analyzed. Symmetric as well as asymmetric geometries are considered. In general, two different dispersion regimes are identified. Furthermore, our analysis shows that the zero and/or the peak dispersion wavelengths can be tailored by a careful control of the geometrical waveguide parameters including the cross-sectional area, the slot fill factor, and the slot asymmetry degree.

Ultrafast all-optical switching in a silicon-nanocrystal-based silicon slot waveguide at telecom wavelengths.

We demonstrate experimentally all-optical switching on a silicon chip at telecom wavelengths. The switching device comprises a compact ring resonator formed by horizontal silicon slot waveguides filled with highly nonlinear silicon nanocrystals in silica. When pumping at power levels about 100 mW using 10 ps pulses, more than 50% modulation depth is observed at the switch output. The switch performs about 1 order of magnitude faster than previous approaches on silicon and is fully fabricated using complementary metal oxide semiconductor technologies.

Highly efficient crossing structure for silicon-on-insulator waveguides.

A compact waveguide crossing structure with low transmission losses and negligible crosstalk is demonstrated for silicon-on-insulator circuits. The crossing structure is based on a mode expander optimized by means of a genetic algorithm leading to transmission losses lower than 0.2 dB and crosstalk and reflection losses below 40 dB in a broad bandwidth of 20 nm. Furthermore, the resulting crossing structure has a footprint of only 6x6 microm(2) and does not require any additional fabrication steps.