Quantum Hall effect in hydrogenated graphene.

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 cm2/V·s and corresponding Ioffe-Regel disorder parameter (k(F)λ)(-1) ≫ 1. In a zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of the order of 250h/e2. The application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of h/2e2 at 45 T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.

Graphene epitaxy by chemical vapor deposition on SiC.

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) and enables the controlled synthesis of a determined number of graphene layers with a defined doping level. The high quality of graphene is evidenced by a unique combination of angle-resolved photoemission spectroscopy, Raman spectroscopy, transport measurements, scanning tunneling microscopy and ellipsometry. Our measurements indicate that CVD grown graphene is under less compressive strain than its epitaxial counterpart and confirms the existence of an electronic energy band gap. These features are essential for future applications of graphene electronics based on wafer scale graphene growth.

Optical reflection and transmission properties of exfoliated graphite from a graphene monolayer to several hundred graphene layers.

The optical reflection contrast and optical transmission contrast of graphitic films on glass ranging in thickness from a monolayer to the limit of bulk graphite have been experimentally measured. For samples with more than 10 graphene layers where optical contrast quantization becomes difficult to observe, atomic force microscopy was used to measure the sample thickness. The visible optical reflection and transmission of thin graphitic films is found to depend strongly on the real component of the optical conductance per graphene layer, and comparatively weakly on the imaginary component of optical conductance. This observation in part explains the significant variation in the refractive index of graphene and graphite reported in the literature to date. Spectroscopic measurements reveal a strong dispersion in the optical conductance of even a 10 layer film, consistent with an imaginary conductance arising from virtual transitions at the band edges of the pi and sigma bands at the M and Gamma points, respectively.