RESUMEN
Short-pulse high-peak-power lasers are crucial laser sources for various applications such as non-thermal ultrafine material processing and eye-safe high-resolution remote sensing. Realizing such operation in a single semiconductor laser chip without amplifiers or external resonators is expected to contribute to the development of compact, affordable laser sources for such applications. In this paper, we demonstrate short-pulse high-peak-power photonic-crystal surface-emitting lasers based on simultaneous absorptive and radiative Q-switching. The proposed device induces an instantaneous and simultaneous decrease in both absorptive and out-of-plane radiation losses due to saturable absorption and self-evolution of the photonic band, respectively, which results in drastic Q-switching operation of the device. Based on this concept, we experimentally demonstrate short-pulse generation with 200-W-class peak power and a pulse width of < 30 ps. In addition, via pulse compression with dispersion compensation, we achieve an even higher peak power of â¼300 W with a shorter pulse width of â¼10 ps.
RESUMEN
Realizing large-scale single-mode, high-power, high-beam-quality semiconductor lasers, which rival (or even replace) bulky gas and solid-state lasers, is one of the ultimate goals of photonics and laser physics. Conventional high-power semiconductor lasers, however, inevitably suffer from poor beam quality owing to the onset of many-mode oscillation1,2, and, moreover, the oscillation is destabilized by disruptive thermal effects under continuous-wave (CW) operation3,4. Here, we surmount these challenges by developing large-scale photonic-crystal surface-emitting lasers with controlled Hermitian and non-Hermitian couplings inside the photonic crystal and a pre-installed spatial distribution of the lattice constant, which maintains these couplings even under CW conditions. A CW output power exceeding 50 W with purely single-mode oscillation and an exceptionally narrow beam divergence of 0.05° has been achieved for photonic-crystal surface-emitting lasers with a large resonant diameter of 3 mm, corresponding to over 10,000 wavelengths in the material. The brightness, a figure of merit encapsulating both output power and beam quality, reaches 1 GW cm-2 sr-1, which rivals those of existing bulky lasers. Our work is an important milestone toward the advent of single-mode 1-kW-class semiconductor lasers, which are expected to replace conventional, bulkier lasers in the near future.
RESUMEN
Flash light sources with a wide field of view (FOV) are indispensable in various fields such as light detection and ranging (LiDAR), optical wireless communication, and adaptive lighting. However, conventional flash light sources, which combine lasers with external optical elements, tend to suffer from high complexity, large size, and high cost. In this study, we investigate a new wide-FOV flash light source which does not require external optical elements, based on a dually modulated photonic crystal surface-emitting laser (PCSEL). First, we propose and design the concept of a photonic crystal into which information of gradually varying diffraction vectors is introduced in order to artificially broaden the divergence angle. We then experimentally demonstrate photonic crystals based on this concept. Finally, by arraying 100 such lasers with mutually different central emission angles and driving all of these lasers simultaneously, we successfully achieve optics-free, 4-W flash illumination over a FOV of 30° × 30° at a wavelength of 940â nm.
RESUMEN
Realization of one-chip, ultra-large-area, coherent semiconductor lasers has been one of the ultimate goals of laser physics and photonics for decades. Surface-emitting lasers with two-dimensional photonic crystal resonators, referred to as photonic-crystal surface-emitting lasers (PCSELs), are expected to show promise for this purpose. However, neither the general conditions nor the concrete photonic crystal structures to realize 100-W-to-1-kW-class single-mode operation in PCSELs have yet to be clarified. Here, we analytically derive the general conditions for ultra-large-area (3~10 mm) single-mode operation in PCSELs. By considering not only the Hermitian but also the non-Hermitian optical couplings inside PCSELs, we mathematically derive the complex eigenfrequencies of the four photonic bands around the Γ point as well as the radiation constant difference between the fundamental and higher-order modes in a finite-size device. We then reveal concrete photonic crystal structures which allow the control of both Hermitian and non-Hermitian coupling coefficients to achieve 100-W-to-1-kW-class single-mode lasing.
RESUMEN
Mechanical-free, high-power, high-beam-quality two-dimensional (2D) beam scanning lasers are in high demand for various applications including sensing systems for smart mobility, object recognition systems, and adaptive illuminations. Here, we propose and demonstrate the concept of dually modulated photonic crystals to realize such lasers, wherein the positions and sizes of the photonic-crystal lattice points are modulated simultaneously. We show using nano-antenna theory that this photonic nanostructure is essential to realize 2D beam scanning lasers with high output power and high beam quality. We also fabricate an on-chip, circuit-driven array of dually modulated photonic-crystal lasers with a 10 × 10 matrix configuration having 100 resolvable points. Our device enables the scanning of laser beams over a wide range of 2D directions in sequence and in parallel, and can be flexibly designed to meet application-specific demands.
RESUMEN
Achieving high brightness (where brightness is defined as optical power per unit area per unit solid angle) in semiconductor lasers is important for various applications, including direct-laser processing and light detection and ranging for next-generation smart production and mobility. Although the brightness of semiconductor lasers has been increased by the use of edge-emitting-type resonators, their brightness is still one order of magnitude smaller than that of gas and solid-state/fibre lasers, and they often suffer from large beam divergence with strong asymmetry and astigmatism. Here, we develop a so-called 'double-lattice photonic crystal', where we superimpose two photonic lattice groups separated by one-quarter wavelength in the x and y directions. Using this resonator, an output power of 10 W with a very narrow-divergence-angle (<0.3°) symmetric surface-emitted beam is achieved from a circular emission area of 500 µm diameter under pulsed conditions, which corresponds to a brightness of over 300 MW cm-2 sr-1. In addition, an output power up to ~7 W is obtained under continuous-wave conditions. Detailed analyses on the double-lattice structure indicate that the resonators have the potential to realize a brightness of up to 10 GW cm-2 sr-1, suggesting that compact, affordable semiconductor lasers will be able to rival existing gas and fibre/disk lasers.
