1.
Phys Rev Lett
; 97(15): 155701, 2006 Oct 13.
Artículo
en Inglés
| MEDLINE
| ID: mdl-17155336
RESUMEN
The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.