THz quantum cascade lasers operating on the radiative modes of a 2D photonic crystal.

Photonic-crystal lasers operating on Γ-point band-edge states of a photonic structure naturally exploit the so-called "nonradiative" modes. As the surface output coupling efficiency of these modes is low, they have relatively high Q factors, which favor lasing. We propose a new 2D photonic-crystal design that is capable of reversing this mode competition and achieving lasing on the radiative modes instead. Previously, this has only been shown in 1D structures, where the central idea is to introduce anisotropy into the system, both at unit-cell and resonator scales. By applying this concept to 2D photonic-crystal patterned terahertz frequency quantum cascade lasers, surface-emitting devices with diffraction-limited beams are demonstrated, with 17 mW peak output power.

Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors.

We report the fabrication of a photonic platform consisting of single wire light-emitting diodes (LED) and photodetectors optically coupled by waveguides. MOVPE-grown (metal-organic vapor-phase epitaxy) InGaN/GaN p-n junction core-shell nanowires have been used for device fabrication. To achieve a good spectral matching between the emission wavelength and the detection range, different active regions containing either five narrow InGaN/GaN quantum wells or one wide InGaN segment were employed for the LED and the detector, respectively. The communication wavelength is ∼400 nm. The devices are realized by means of electron beam lithography on Si/SiO2 templates and connected by ∼100 µm long nonrectilinear SiN waveguides. The photodetector current trace shows signal variation correlated with the LED on/off switching with a fast transition time below 0.5 s.

Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI.

We report a high lasing wavelength uniformity of optically pumped InP-based microdisk lasers processed with electron-beam lithography, heterogeneously integrated with adhesive bonding on silicon-on-insulator (SOI) waveguide circuits and evanescently coupled to an underlying waveguide. We study the continuous wave laser emission coupling out of the SOI via a grating coupler etched at one side of the waveguide, and demonstrate a standard deviation in lasing wavelength of nominally identical devices on the same chip lower than 500 pm. The deviation in the diameter of the microdisks as low as a few nanometers makes all-optical signal processing applications requiring cascadability possible.

Hybrid III-V semiconductor/silicon nanolaser.

Heterogeneous integration of III-V compound semiconductors on Silicon on Insulator is one the key technology for next-generation on-chip optical interconnects. In this context, the use of photonic crystals lasers represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we propose and fabricate very compact laser sources integrated with a passive silicon waveguide circuitry. Using a subjacent Silicon-On-Insulator waveguide, the emitted light from a photonic crystal based cavity laser is efficiently captured. We study experimentally the evanescent wave coupling responsible for the funneling of the emitted light into the silicon waveguide mode as a function of the hybrid structure parameters, showing that 90% of coupling efficiency is possible.