Pseudocapsule and pseudocapsule-based extracapsular resection in pituitary neuroendocrine tumors.

Since Costello et al. proposed the concept of pseudocapsule of pituitary neuroendocrine tumors (PitNETs) in 1936, many studies have been published on its occurrence, development process, histopathology, and morphology. Pseudocapsule has been proposed as the anatomical interface between PitNETs and normal pituitary gland, therefore the so-called pseudocapsule-based extracapsular resection (ER) technique was developed as an extracapsular surgery method for PitNETs,which differs from the conventional intracapsular resection (IR). In recent years, ER has also been widely used in patients of different tumor types, sizes, and age groups, because the pseudocapsule can be identified more clearly under the endoscopy. Endoscopic transsphenoidal resection for PitNETs has become the preferred surgical method. We reviewed relevant literatures in the past 10 years, showing that ER could achieve better rate of gross total resection (GTR) and biochemical remission, and reduce tumor recurrence than IR, without increasing postoperative complications. Therefore, the pseudocapsule and ER should be valued by neurosurgeons and actively promoted clinically.

[Carbon density distribution characteristics and influencing factors in aerially seeded Pinus massoniana plantations]. / é£žæ’­é©¬å°¾æ¾æž—ç¢³å¯†åº¦åˆ†é ç‰¹å¾åŠå ¶å½±å“å› ç´ .

The distribution characteristics of carbon density under aerially seeded Pinus massoniana plantations in Ganzhou City of Jiangxi Province were studied. Total 15 factors, including site, stand, understory vegetation, litter and so on were selected to establish a relationship model between stand carbon density and influencing factors, and the main influencing factors were also screened. The results showed that the average carbon density was 98.29 t·hm-2 at stand level with soil layer (49.58 t·hm-2) > tree layer (45.25 t·hm-2) > understory vegetation layer (2.23 t·hm-2) > litter layer (1.23 t·hm-2). Significantly positive correlations were found among the tree, litter and soil layers, but not among the other layers. The main factors were tree density, avera-ge diameter at breast height (DBH), soil thickness, slope position, stand age and canopy density to affect carbon density in aerially seeded P. massoniana plantations. The partial correlation coefficients of the six main factors ranged from 0.331 to 0.434 with significance by t test. The multiple correlation coefficient of quantitative model I reached 0.796 with significance by F test (F=9.28). For stand density, the best tree density and canopy density were 1500-2100 plants·hm-2 and 0.4-0.7, respectively. The moderate density was helpful to improve ecosystem carbon sequestration. The carbon density increased with increasing stand age, DBH and soil thickness, and was higher in lower than middle and upper slope positions.

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2.

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Herein, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, therefore eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on a way to obtain smaller quantum dots on TMDCs with the same top gate geometry compared to traditional GaAs/AlGaAs heterostructures with further research.

Suspending effect on low-frequency charge noise in graphene quantum dot.

Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Such information is not yet available for QDs made out of the new material graphene, where both substrate and edge states are known to have important effects. Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET), increasing linearly with temperature. To understand its origin, we suspended the graphene QD above the substrate. In contrast to large area graphene FETs, we find that a suspended graphene QD has an almost-identical noise level as an unsuspended one. Tracking noise levels around the Coulomb blockade peak as a function of gate voltage yields potential fluctuations of order 1 µeV, almost one order larger than in GaAs/GaAlAs QDs. Edge states and surface impurities rather than substrate-induced disorders, appear to dominate the 1/f noise, thus affecting the coherency of graphene nano-devices.