Single-frequency optical parametric oscillator intracavity-pumped by a visible VECSEL for low-noise down-conversion to 1.55 µm.

We report, to the best of our knowledge, the first optical parametric oscillator (OPO) pumped by a visible AlGaInP-based vertical-external-cavity surface-emitting laser (VECSEL). Tunable emission over 1155-1300 nm in the signal and 1474-1718 nm in the idler are observed by temperature adjustment of a 40 mm-long 5%-MgO:PPLN crystal intracavity-pumped at 690 nm. When optimized for low oscillation threshold, and by implementing resonant idler output-coupling (TOC = 1.7%), extracted output powers of 26.2 mW (signal) and 5.6 mW (idler; one-way) are measured, corresponding to a total down-conversion efficiency and extraction efficiency of 70.2% and 43%, respectively. Further, a total down-conversion efficiency of 72.1% is achieved in the absence of idler output-coupling. Of particular interest for high-precision applications, including quantum optics experiments and squeezed light generation, high stability and single-frequency operation are also demonstrated. We measure RMS stabilities of 0.4%, 1.8% and 2.3% for the VECSEL fundamental, signal and idler, with (resolution-limited) frequency linewidths of 2.5 MHz (VECSEL) and 7.5 MHz (signal and idler).

Monolithic VECSEL for stable kHz linewidth.

Vertical-external-cavity surface-emitting semiconductor lasers (VECSELs) are of increasing interest for applications requiring ultra-coherence and/or low noise at novel wavelengths; performance that is currently achieved via high-Q, air-spaced resonators to achieve long intra-cavity photon lifetimes (for the so-called class-A low noise regime), power scaling and high beam quality. Here, we report on the development of a compact, electronically tunable, monolithic-cavity, class-A VECSEL (monolithic VECSEL) for ultra-narrow free-running linewidths. A multi-quantum-well, resonant periodic gain structure with integrated distributed Bragg reflector (DBR) was optically-bonded to an air-gap-free laser resonator created inside a right-angle fused-silica prism to suppress the influence of environmental noise on the external laser oscillation, thus achieving high stability. Mode-hop-free wavelength tuning is performed via the stabilized temperature; or electronically, and with low latency, via a shear piezo-electric transducer mounted on the top of the prism. The free-running linewidth, estimated via the frequency power spectral density (PSD), is sub-kHz over ms timescales and <1.9 kHz for time sampling as long as 1s, demonstrating at least two orders-of-magnitude improvement in noise performance compared to previously reported single frequency VECSELs. The stable, total internal reflection resonator concept is akin to the prevalent monolithic non-planar ring oscillator (NPRO), however the monolithic VECSEL has several important advantages: tailored emission wavelength (via semiconductor bandgap engineering), no relaxation oscillations, no applied magnetic field, and low requirements on the pump beam quality. This approach is power-scalable in principle and could be applied to VECSELs at any of the wavelengths from the visible to the mid-infrared at which they are already available, to create a range of robust, ultra-coherent laser systems with reduced bulkiness and complexity. This is of particular interest for remote metrology and the translation of quantum technologies, such as optical clocks, from research laboratories into real world applications.

Low phase noise operation of a cavity-stabilized 698†nm AlGaInP-based VECSEL.

We report for the first time a high performance, single frequency AlGaInP-based VECSEL (vertical-external-cavity surface-emitting-laser) with emission at 698 nm, targeting the clock transition of neutral strontium atoms. Furthermore, we present comprehensive noise characterization of this class-A semiconductor laser, including the residual fast phase noise in addition to the frequency and relative intensity noise. The low noise VECSEL has output power at around 135 mW with an estimated linewidth of 115 Hz when frequency stabilized via the Pound-Drever-Hall (PDH) technique to a high finesse reference cavity, without intermediate stabilization. The phase noise is measured to be below -126 dBc/Hz for frequencies between 10 kHz and 15 MHz with a total integrated phase noise of 3.2 mrad, suitable not only for ultra-cold neutral strontium-based quantum technologies, such as optical clocks, but also with potential for atom-interferometry applications.

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm.

We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

Sub-kHz-linewidth VECSELs for cold atom experiments.

We report and characterize sub-kHz linewidth operation of an AlGaInP-based VECSEL system suitable for addressing the narrow cooling transition of neutral strontium atoms at 689 nm. When frequency-stabilized to a standard air-spaced Fabry-Perot cavity (finesse 1000) via the Pound-Drever-Hall (PDH) technique, it delivers output power >150 mW in a circularly-symmetric single transverse mode with low frequency and intensity noise. The optical field was reconstructed from the frequency noise error signal via autocorrelation and the Wiener-Khintchine theorem, leading to an estimated linewidth of (125 ± 2) Hz. Optical beat note measurements were performed against a commercial locked laser system and a second, almost identical, VECSEL system resulting in linewidths of 200 Hz and 160 Hz FWHM, respectively. To the best of our knowledge, this is the first demonstration of a VECSEL compatible with the narrowest of lines (few hundred Hz) used for cooling and trapping atoms and ions.

1.4 µm continuous-wave diamond Raman laser.

The longest wavelength (~1.4 µm) emitted by a diamond Raman laser pumped by a semiconductor disk laser (SDL) is reported. The output power of the intracavity-pumped Raman laser reached a maximum of 2.3 W with an optical conversion efficiency of 3.4% with respect to the absorbed diode pump power. Narrow Stokes emission (FWHM <0.1 nm) was attained using etalons to limit the fundamental spectrum to a single etalon peak. Tuning of the Raman laser over >40 nm was achieved via rotation of an intracavity birefringent filter that tuned the SDL oscillation wavelength.

Tunable narrow linewidth AlGaInP semiconductor disk laser for Sr atom cooling applications.

We report a frequency-stabilized semiconductor disk laser based on AlGaInP and operating at 689 nm, a wavelength of interest for atomic clocks based on strontium atoms. With a gain structure designed for emission at around 690 nm, more than 100 mW of output power are generated in single-frequency operation. We show that the source can be tuned over 8 nm with pm precision. By servo-locking the frequency to the side of fringe of a reference cavity, we demonstrate rms frequency noise of 5.2 kHz.

Intracavity Raman conversion of a red semiconductor disk laser using diamond.

We demonstrate a diamond Raman laser intracavity-pumped by a red semiconductor disk laser (~675 nm) for laser emission at around 740 nm. Output power up to 82 mW of the Stokes-shifted field was achieved, limited by the available pump power, with an output coupling of 1.5%. We also report wavelength tuning of the diamond Raman laser over 736 - 750 nm.

Frequency stabilization of an ultraviolet semiconductor disk laser.

We report a tunable, narrow-linewidth UV laser based on intracavity second-harmonic generation in a red semiconductor disk laser. Single-frequency operation is demonstrated with a total UV output power of 26 mW. By servo-locking the fundamental frequency to a reference Fabry-Pérot cavity, the linewidth of the UV beam has been reduced to 16 kHz on short timescales and 50 kHz on a 1 s timescale, relative to the reference.

Tunable continuous-wave diamond Raman laser.

Continuous-wave operation of a diamond Raman laser, intracavity-pumped by a diode-pumped InGaAs semiconductor disk laser (SDL), is reported. The Raman laser, which utilized a 6.5-mm-long synthetic single-crystal diamond, reached threshold for 5.3 W of diode laser pump power absorbed by the SDL. Output power up to 1.3 W at the first Stokes wavelength of 1227 nm was demonstrated with excellent beam quality and optical conversion efficiency of 14.4% with respect to absorbed diode laser pump power. Broad tuning of the Raman laser output between 1217 and 1244 nm was achieved via intracavity tuning of the SDL oscillation wavelength.

1.6 W continuous-wave Raman laser using low-loss synthetic diamond.

Low-birefringence (Δn<2x10(-6)), low-loss (absorption coefficient <0.006 cm(-1) at 1064 nm), single-crystal, synthetic diamond has been exploited in a CW Raman laser. The diamond Raman laser was intracavity pumped within a Nd:YVO4 laser. At the Raman laser wavelength of 1240 nm, CW output powers of 1.6 W and a slope efficiency with respect to the absorbed diode-laser pump power (at 808 nm) of ~18% were measured. In quasi-CW operation, maximum on-time output powers of 2.8 W (slope efficiency ~24%) were observed, resulting in an absorbed diode-laser pump power to the Raman laser output power conversion efficiency of 13%.

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity.

A KGd(WO4)2 Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.

Continuous-wave diamond Raman laser.

Continuous-wave operation of a diamond Raman laser is demonstrated. Low-birefringence synthetic single-crystal diamond is used and is intracavity pumped by a Nd:YVO(4) laser. A cw output power of 200 mW is achieved at the Raman wavelength (1240 nm), and 1.6 W of on-time output power is obtained in quasi-cw mode. Losses in the diamond (approximately 1% per pass) and thermal effects in the Nd:YVO(4) limit the efficiency.

An intra-cavity Raman laser using synthetic single-crystal diamond.

Low birefringence synthetic single-crystal diamond was used as a Raman laser medium inside a Q-switched Nd:YVO(4) laser. A maximum average output power of 375 mW was achieved at a wavelength of 1240 nm and a repetition rate of 6.3 kHz. This equates to a conversion efficiency of 4% from the diode laser to the first Stokes component at 1240 nm. Optical losses within the diamond (approximately 1% per single pass) limited the performance and are currently the main barrier to the demonstration of an efficient CW diamond Raman laser.

InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm.

Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (Al(x)Ga(1-x))(0.51)In(0.49)P based semiconductor disk laser with monolithic Al(x)Ga(1-x)As distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532 nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52 mW at 739 nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser.

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a single-pass of the solid-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible spectrum, by appropriate choice of semiconductor material and single-pass laser wavelength.

Intracavity diamond heatspreaders in lasers: the effects of birefringence.

The birefringence of a number of commercially-available diamond platelets is assessed in the context of their use for intracavity thermal management in lasers. Although diamond is normally thought of as isotropic, significant birefringence is found to be present in some samples, with considerable variation from batch to batch, and in some cases across an individual sample. Nonetheless, low-loss operation is achieved in a laser cavity containing a Brewster element, either by rotating the sample or by using a diamond platelet with low birefringence.