Nanowire Superinductance Fluxonium Qubit.

We characterize a fluxonium qubit consisting of a Josephson junction inductively shunted with a NbTiN nanowire superinductance. We explain the measured energy spectrum by means of a multimode theory accounting for the distributed nature of the superinductance and the effect of the circuit nonlinearity to all orders in the Josephson potential. Using multiphoton Raman spectroscopy, we address multiple fluxonium transitions, observe multilevel Autler-Townes splitting and measure an excited state lifetime of T_{1}=20 µs. By measuring T_{1} at different magnetic flux values, we find a crossover in the lifetime limiting mechanism from capacitive to inductive losses.

Shuttling a single charge across a one-dimensional array of silicon quantum dots.

Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent single spin-photon coupling. Coupling arbitrary pairs of spatially separated qubits in a quantum register poses a significant challenge as most qubit systems are constrained to two dimensions with nearest neighbor connectivity. For spins in silicon, new methods for quantum state transfer should be developed to achieve connectivity beyond nearest-neighbor exchange. Here we demonstrate shuttling of a single electron across a linear array of nine series-coupled silicon quantum dots in ~50 ns via a series of pairwise interdot charge transfers. By constructing more complex pulse sequences we perform parallel shuttling of two and three electrons at a time through the array. These experiments demonstrate a scalable approach to physically transporting single electrons across large silicon quantum dot arrays.

Undoped accumulation-mode Si/SiGe quantum dots.

We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function-control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrated over more than nine orders of magnitude and independently confirmed by direct measurement within the bandwidth of our amplifiers. The inter-dot tunnel coupling at the [Formula: see text] charge configuration anti-crossing is directly measured to quantify the control of a single inter-dot tunnel barrier gate. A simple exponential dependence is sufficient to describe each of these tunneling processes as a function of the controlling gate voltage.