Spin-Lattice Coupled Metamagnetism in Frustrated van der Waals Magnet CrOCl.

The long-range magnetic ordering in frustrated magnetic systems is stabilized by coupling magnetic moments to various degrees of freedom, for example, by enhancing magnetic anisotropy via lattice distortion. Here, the unconventional spin-lattice coupled metamagnetic properties of atomically-thin CrOCl, a van der Waals antiferromagnet with inherent magnetic frustration rooted in the staggered square lattice, are reported. Using temperature- and angle-dependent tunneling magnetoconductance (TMC), in complementary with magnetic torque and first-principles calculations, the antiferromagnetic (AFM)-to-ferrimagnetic (FiM) metamagnetic transitions (MTs) of few-layer CrOCl are revealed to be triggered by collective magnetic moment flipping rather than the established spin-flop mechanism, when external magnetic field (H) enforces a lattice reconstruction interlocked with the five-fold periodicity of the FiM phase. The spin-lattice coupled MTs are manifested by drastic jumps in TMC, which show anomalous upshifts at the transition thresholds and persist much higher above the AFM Néel temperature. While the MTs exhibit distinctive triaxial anisotropy, reflecting divergent magnetocrystalline anisotropy of the c-axis AFM ground state, the resulting FiM phase has an a-c easy plane in which the magnetization axis is freely rotated by H. At the 2D limit, such a field-tunable FiM phase may provide unique opportunities to explore exotic emergent phenomena and novel spintronics devices.

Designing Ultra-flat Bands in Twisted Bilayer Materials at Large Twist Angles: Theory and Application to Two-Dimensional Indium Selenide.

Intertwisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses a challenge for experimental studies and practical applications. Here, we propose a new design principle to achieve low-energy ultra-flat bands with increased twist angles. The key condition is to have a 2D semiconducting material with a large energy difference of band edges controlled by stacking. We show that the interlayer interaction leads to defect-like states under twisting, which forms a flat band in the semiconducting band gap with dispersion strongly suppressed by the large energy barriers in the moiré superlattice even for large twist angles. We explicitly demonstrate our idea in bilayer α-In2Se3 and bilayer InSe. For bilayer α-In2Se3, we show that a twist angle of ∼13.2° is sufficient to achieve the band flatness comparable to that of twist bilayer graphene at the magic angle ∼1.1°. In addition, the appearance of ultra-flat bands here is not sensitive to the twist angle as in bilayer graphene, and it can be further controlled by external gate fields. Our finding provides a new route to achieve ultra-flat bands other than reducing the twist angles and paves the way toward engineering such flat bands in a large family of 2D materials.

Van der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

Magnetic tunnel junctions (MTJs), ferroelectric/antiferroelectric tunnel junctions (FTJs/AFTJs), and multiferroic tunnel junctions (MFTJs) have recently attracted significant interest for technological applications of nanoscale memory devices. Until now, most of them are based on perovskite oxide heterostructures with a relatively high resistance-area (RA) product and low resistance difference unfavorable for practical applications. The recent discovery of the two-dimensional (2D) van der Waals (vdW) ferroelectric (FE) and magnetic materials has opened a new route to realize tunnel junctions with high performance and atomic-scale dimensions. Here, using first-principles calculations, we propose a new type of 2D tunnel junction: an antiferroelectric magnetic tunnel junction (AFMTJ), which inherits the features of both MTJ and AFTJ. This AFMTJ is composed of monolayer CuInP2S6 (CIPS) sandwiched between 2D magnetic electrodes of CrSe2. The AFTJ with nonmagnetic electrodes of TiSe2 on both sides of CIPS and the asymmetric AFTJ with both CrSe2 and TiSe2 electrodes are also investigated. Based on quantum-mechanical modeling of the electronic transport, sizeable tunneling electroresistance effects and multiple nonvolatile resistance states are demonstrated. More importantly, a remarkably low RA product (less than 0.1 Ω·µm2) makes the proposed vdW AFMTJs superior to the conventional MFTJs in terms of their promising nonvolatile memory applications. Our calculations provide new guidance for the experiment and application of nanoscale memory devices.

Coexistence of Ferroelectricity and Ferromagnetism in One-Dimensional SbN and BiN Nanowires.

Ferroelectricity exists in a variety of three- and two-dimensional materials and is of great significance for the development of electronic devices. However, the presence of ferroelectricity in one-dimensional materials is extremely rare. Here, we predict ferroelectricity in one-dimensional SbN and BiN nanowires. Their polarization strengths are 1 order of magnitude higher than ever reported values in one-dimensional structures. Moreover, we find that spontaneous spin polarization can be generated in SbN and BiN nanowires by moderate hole doping. This is the first time the coexistence of both ferroelectricity and ferromagnetism in a one-dimensional system has been reported. Our finding not only broadens the family of one-dimensional ferroelectric materials but also offers a promising platform for novel electronic and spintronic applications.

Nonvolatile electrical control of 2D Cr2Ge2Te6 and intrinsic half metallicity in multiferroic hetero-structures.

The electrical control of two-dimensional (2D) van der Waals ferromagnets is a step forward for the realization of spintronic devices. However, using this approach for practical applications remains challenging due to its volatile memory. Herein, we adopt an alternative strategy, where the bistable ferroelectric switches (P↑ and P↓) of Sc2CO2 (SCO) assist the ferromagnetic states of Cr2Ge2Te6 (CGT) in order to achieve non-volatile memories. Moreover, MXene SCO, being an aided layer in multiferroic CGT/SCO hetero-structures, also modifies the electronic properties of CGT to half metal by its polarized P↓ state. In contrast, the P↑ state does not change the semiconducting nature of CGT. Hence, non-volatile, electrical-controlled switching of ferromagnetic CGT can be engineered by the two opposite ferroelectric states of single layer SCO. Importantly, the magnetic easy axis of CGT switches from in-plane to out-of-plane when the direction of electric polarization of SCO is altered from P↓ to P↑.

First-principles study of stability, electronic structure and quantum capacitance of B-, N- and O-doped graphynes as supercapacitor electrodes.

The structures, stability, electronic properties, and quantum capacitance (C q) of α-, ß-, and γ-graphyne monatomic layer doped with B, N, and O atoms, respectively, were studied using density functional theory. Two different doping sites (i.e. D1 and D2) were considered. Upon replacement of C atoms in the three graphynes with B and N atoms, the structure of graphynes was minimally distorted. This change was mainly manifested as a negligible adjustment of bond length around the doped atoms and lattice constant. However, with O atom doping, the structural distortion of graphynes was obvious in the majority of cases. The doping of these atoms significantly improved the electronic state of the original graphyne near the Fermi level, thereby improving graphyne C q. Pristine graphynes with large pores and specific surface area exhibited better C q performance than that of pure graphene. C q of graphynes doped with B, N, and O showed significant advantage over that of doped graphene, especially that of α-, ß-, and γ-graphyne with B doping at D1 and α-graphyne with O doping at D1. Interestingly, ß-graphyne with O doping at D2 showed a considerably symmetrical C q. Thus, element-doped graphynes have great potential as electrode materials for supercapacitors.

The investigation of cobalt intercalation underneath epitaxial graphene on 6H-SiC(0 0 0 1).

The intercalation behaviour of cobalt underneath both epitaxial graphene monolayer and bilayer on 6H-SiC(0001) have been investigated by scanning tunneling microscopy (STM) and density functional theory (DFT). Upon deposition, cobalt atoms prefer to agglomerate into clusters on the epitaxial graphene. After annealing the sample to 850 °C, the intercalation of the adsorbed cobalt atoms into both monolayer and bilayer epitaxial graphene on SiC takes place, as observed by the atomically resolved STM images. Further studies based on DFT modeling and simulated STM images show that, resulting from the interplay between the intercalated cobalt atoms and the carbon layers sandwiching it, the most energetically favourable intercalation sites of cobalt atoms underneath monolayer and bilayer graphene differ. Furthermore, the results show energy barriers of 0.60 eV and 0.41 eV for cobalt penetration through mono-vacancy defects at monolayer and bilayer graphene.

Bottom-up fabrication of graphene nanostructures on Ru(1010).

Investigations on the bottom-up fabrication of graphene nanostructures with 10, 10'-dibromo-9, 9'-bianthryl (DBBA) as a precursor on Ru(1010) were carried out using scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations. Upon annealing the sample at submonolayer DBBA coverage, N = 7 graphene nanoribbons (GNRs) aligned along the [1210] direction form. Higher DBBA coverage and higher annealing temperature lead to the merging of GNRs into ribbon-like graphene nanoflakes with multiple orientations. These nanoflakes show different Moiré patterns, and their structures were determined by DFT simulations. The results showed that GNRs possess growth preference on the Ru(1010) substrate with a rectangular unit cell, and GNRs with armchair and zigzag boundaries are obtainable. Further DFT calculations suggest that the interaction between graphene and the substrate controls the orientations of the graphene overlayer and the growth of graphene on Ru(1010).

Bottom-up fabrication of graphene on Ru(0001) via molecular self-assembly.

A bottom-up fabrication of graphene via molecular self-assembly of p-Terphenyl on Ru(0001) has been investigated by scanning tunneling microcopy and density functional theory. Upon annealing of the sample at 450 °C, the intermediate stage is observed, in which the adsorbed p-Terphenyl molecules and graphitized flakes converted from the molecules coexist, implying the onset of dehydrogenation of p-Terphenyl. At the annealing temperature of 480 °C, the graphitized flakes start to convert into graphene. An adsoption energy of 5.99 eV is calculated for an individual p-Terphenyl molecule on Ru(0001), denoting a strong interaction between the adsorbate and substrate. The intermolecular interaction brings an extra adsorption energy of 0.28 eV for each molecule in the di-molecule adsorption system. During the conversion process from adsorbed molecule into graphene, the intermolecular interaction leads to the increase of the dehydrogenation barrier from 1.52 to 1.64 eV.

Topological properties determined by atomic buckling in self-assembled ultrathin Bi(110).

Topological insulators (TIs) are a new type of electronic materials in which the nontrivial insulating bulk band topology governs conducting boundary states with embedded spin-momentum locking. Such edge states are more robust in a two-dimensional (2D) TI against scattering by nonmagnetic impurities than in its three-dimensional (3D) variant, because in 2D the two helical edge states are protected from the only possible backscattering. This makes the 2D TI family a better candidate for coherent spin transport and related applications. While several 3D TIs are already synthesized experimentally, physical realization of 2D TI is so far limited to hybrid quantum wells with a tiny bandgap that does not survive temperatures above 10 K. Here, combining first-principles calculations and scanning tunneling microscopy/spectroscopy (STM/STS) experimental studies, we report nontrivial 2D TI phases in 2-monolayer (2-ML) and 4-ML Bi(110) films with large and tunable bandgaps determined by atomic buckling of Bi(110) films. The gapless edge states are experimentally detected within the insulating bulk gap at 77 K. The band topology of ultrathin Bi(110) films is sensitive to atomic buckling. Such buckling is sensitive to charge doping and could be controlled by choosing different substrates on which Bi(110) films are grown.

Electronic and structural properties at the interface between iron-phthalocyanine and Cu(110).

Electronic structure and adsorption geometry of Iron-Phthalocyanine (FePc) adsorbed on Cu(110) were investigated by using ultraviolet photoelectron spectroscopy (UPS) and first-principles density functional theory (DFT) calculations. The emission features α, ß, γ, and δ originating from the FePc molecules in UPS spectra are located at 3.42, 5.04, 7.36, and 10.28 eV below Fermi level. The feature α is mostly deriving from Fe 3d orbital with some contributions from C 2p orbital. A considerable charge transfer from the Cu substrate to the Fe 3d orbital occurs upon the adsorption of FePc molecules. The angle-resolved UPS measurements indicate that FePc molecules adopt lying-down configurations with their molecular plane nearly parallel to the Cu(110) substrate at monolayer stage. In combination with the DFT calculations, the adsorption structure is determined to be that FePc molecule adsorbs on the top site of Cu(110) with an angle of 45° between the lobes of FePc and the [110] azimuth of the substrate.

Templating ultra-small manganese isomers with preference for adsorption sites and narrow distribution tuned by different moiré periodicities of monolayer graphene on Ru(0001).

The process of templating a manganese nanocluster with the 12 × 12 moiré and other two slightly distorted graphene/Ru(0001) moirés was investigated by scanning tunneling microscopy (STM). At the initial stage of nucleation, different adsorption modes for Mn monomer, dimer and trimer guided by various moiré periodicities were observed. Upon Mn coverage increasing, STM measurements revealed that Mn clusters exhibit a detectable preference for adsorption sites on all the three different moirés. The most favorable adsorption sites for Mn clusters are the fcc regions, where ordering of Mn clusters was observable, and the lateral size of the clusters are tunable with coverage. A density functional theory calculation also showed that magnetism appears with a magnetic moment of 3.79µ(B) for Mn monomer on MLG/Ru(0001).

Cluster-assembled materials based on M12N12 (M = Al, Ga) fullerene-like clusters.

We report the results of density functional theory calculations on cluster-assembled materials based on M(12)N(12) (M = Al, Ga) fullerene-like clusters. Our results show that the M(12)N(12) fullerene-like structure with six isolated four-membered rings (4NRs) and eight six-membered rings (6NRs) has a T(h) symmetry and a large HOMO-LUMO gap, indicating that the M(12)N(12) cluster would be ideal building blocks for the synthesis of cluster-assembled materials. Via the coalescence of M(12)N(12) building blocks, we find that the M(12)N(12) clusters can bind into stable assemblies by either 6NR or 4NR face coalescence, which enables the construction of rhombohedral or cubic nanoporous framework of varying porosity. The rhombohedral-MN phase is energetically more favorable than the cubic-MN phase. The M(12)N(12) fullerene-like structures in both phases are maintained and the M-N bond lengths between M(12)N(12) monomers are slightly larger than that in isolated M(12)N(12) clusters and the bulk wurtzite phases. The band analysis of both phases reveals that they are all wide-gap semiconductors. Because of the nanoporous character of these phases, they could be used for gas storage, heterogeneous catalysis, filtration and so on.

The initial growth behavior of perylene on Cu(100).

Using scanning tunneling microscopy (STM) together with density functional theory (DFT) the growth behavior of perylene on the Cu(100) substrate has been investigated. As revealed by STM images, perylene molecules prefer to adopt lying configuration with their molecular plane parallel to the substrate, and two symmetrically equivalent ordered domains were observed. DFT calculations show that perylene molecule prefers to adsorb on the top site of substrate Cu atoms with its long molecular axis aligning along the [011] or [01-1] azimuth of the substrate which is the most stable adsorption geometry according to its highest binding energy. Consequently, two adsorption structures of c(8×4) and c(8×6), each containing two perylene molecules per unit cell, are proposed based on our STM images. The growth mechanism for ordered perylene domains on Cu(100) can be attributed to the balance between weak adsorbate-adsorbate interaction and comparable adsorbate-substrate interaction.

The chemisorption of tetracene on Si(100)-2x1 surface.

The adsorption of tetracene on Si(100)-2x1 substrate has been studied by ultraviolet photoemission spectroscopy (UPS). Six features deriving from the organic material are located at 1.22, 2.41, 3.63, 4.67, 7.11, and 8.77 eV below the Fermi level. These features shift in binding energy with increasing the thickness of the organic film. In the case of a monolayer, angle-resolved UPS measurements suggest that the molecular plane is parallel to the substrate. Further theoretical density functional theory calculation reveals the most stable structure of tetracene molecule on Si substrate in which six covalent Si-C chemical bonds are formed between carbon atoms of the tetracene molecule and the Si atoms on the substrate.

Interfacial electronic states of tetracene deposited on Si(111).

The interfacial electronic states of tetracene on Si(111) 7x7 substrate were studied by using ultraviolet photoelectron spectroscopy (UPS). After deposition of tetracene on the Si(111) 7x7 surface, the features originating from the tetracene molecule appear at 1.55, 3.36, 6.78, 9.24, and 10.76 eV below the Fermi level; they shift in binding energy with increasing organic film coverage. From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the submonolayer range suggesting that an interfacial dipole is formed. A density functional theory calculation had also been carried out to determine the favorable adsorption structure. The molecule near the top of a center adatom with the longer molecular axis along the [110] azimuth is the most favorable.

Study of the electronic structure at the interface between fluorene-1-carboxylic acid molecules and Cu(110).

The interface electronic properties of fluorene-1-carboxylic acid (FC-1) adsorbed on Cu(110) have been studied by ultraviolet photoemission spectroscopy (UPS) and first-principles calculations. Both the molecular orbitals and the Cu valence band are significantly modified upon adsorption. FC-1 is chemically bonded to Cu(110) through charge donation and back donation involving the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO) of the molecule. An observed reduction of the work function can be attributed to the adsorption induced charge redistribution, and the positive interface dipole.

Monolayer structure of tetracene on Cu (100) surface: parallel geometry.

The geometrical arrangement of tetracene on Cu (100) surface at monolayer coverage is studied by using scanning tunneling microscopy measurement and density functional theory (DFT) calculations. Tetracene molecule is found to be oriented with its molecular plane parallel to the substrate surface, and no perpendicular geometry is observed at this coverage. The molecule is aligned either in the [011] or [011] direction due to the fourfold symmetry of the Cu (100) surface. DFT calculations show that the molecule with the "flat-lying" mode has larger adsorption energy than that with the "upright standing" mode, indicating that the former is the more stable structure. With the flat-lying geometry, the carbon atoms prefer to be placed between surface Cu atoms. The molecular center prefers to be located at the bridge site between two nearest surface Cu atoms.

Valence electronic properties of n-channel organic materials based on fluorinated derivatives of perylene diimides.

The valence electronic states of three kinds of fluorinated derivatives of perylene diimides, D2MFPP, D3MFPP, and D4MFPP, on Cu(110) and SiO(2)Si surface were studied by photoemission and density functional calculations. When these organic molecules were deposited on the Cu(110) and thermally oxidized SiO(2) surfaces, five well-resolved photoemission features originating from the molecules were observed. On Cu(110) surface, two emission features with pi-like character increased their binding energy with increasing the coverage of organic molecule, indicating a strong interaction between the organic molecules and Cu substrate. The density functional calculations suggest flat-lying adsorption geometry for D3MFPP and D4MFPP on Cu(110) surface.

Study on the interaction between tetracene and Cu(110) surface.

The electronic structure of tetracene on Cu (110) surface has been studied by using ultraviolet photoemission spectroscopy (UPS). The emission features from the organic molecule are located from 1 to 10 eV below the Fermi level, and they shift in binding energy with increasing the coverage of the organic material. For the surface with multilayer of tetracene, six well-resolved features were found at 1.90, 3.40, 4.70, 5.95, 6.95, and 9.15 eV below the Fermi level, respectively. On the surface with a lower coverage of tetracene, angle-resolved UPS measurements suggest that the molecular plane is parallel to the substrate. Density functional theory calculation confirms the flat-lying adsorption mode and shows that the tetracene molecule prefers to be adsorbed on the long bridge site with its long axis in the [110] azimuth.