RESUMEN
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for integration into photonic structures allows for enhanced brightness through the Purcell effect, supporting efficient quantum communication technologies. Our work focuses on InAs/InP QDs created via droplet epitaxy MOVPE to operate within the telecoms C-band. We observe a short radiative lifetime of 340 ps, arising from a Purcell factor of 5, owing to integration of the QD within a low-mode-volume photonic crystal cavity. Through in-situ control of the sample temperature, we show both temperature tuning of the QD's emission wavelength and a preserved single photon emission purity at temperatures up to 25K. These findings suggest the viability of QD-based, cryogen-free C-band single photon sources, supporting applicability in quantum communication technologies.
RESUMEN
We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal-organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different etching processes are observed depending on the crystallization temperature: local drilling and long-range etching. In local drilling occurring at temperatures of ≤500 °C, the In droplet locally liquefies the InP underneath and the P atoms can easily diffuse out of the droplet to the edges. During crystallization, the As atoms diffuse into the droplet and crystallize at the solid-liquid interface, forming an InAs etch pit underneath the QD. In long-range etching, occurring at higher temperatures of >500 °C, the InP layer is destabilized and the In atoms from the surroundings migrate toward the droplet. The P atoms can easily escape from the surface into the vacuum, forming trenches around the QD. We show for the first time the formation of trenches and long-range etching in InAs/InP QDs with atomic resolution. Both etching processes can be suppressed by growing a thin layer of InGaAs prior to the droplet deposition. The QD composition is estimated by finite element modeling in combination with X-STM. The change in the morphology of QDs due to etching can strongly influence the fine structure splitting. Therefore, the current atomic-resolution study sheds light on the morphology and etching behavior as a function of crystallization temperature and provides a valuable insight into the formation of InAs/InP droplet epitaxy QDs which have potential applications in quantum information technologies.
RESUMEN
InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a metal organic vapor phase epitaxy (MOVPE) reactor. Formation of metallic indium droplets on the In0.53Ga0.47As lattice-matched layer and their crystallization into QDs is demonstrated for the first time in MOVPE. The presence of the In0.53Ga0.47As layer prevents the formation of an unintentional non-stoichiometric 2D layer underneath and around the QDs, via suppression of the As-P exchange. The In0.53Ga0.47As layer affects the surface diffusion leading to a modified droplet crystallization process, where unexpectedly the size of the resulting QDs is found to be inversely proportional to the indium supply. Bright single dot emission is detected via micro-photoluminescence at low temperature, ranging from 1440 to 1600 nm, covering the technologically relevant telecom C-band. Transmission electron microscopy investigations reveal buried quantum dots with truncated pyramid shape without defects or dislocations.
RESUMEN
Quantum networks are essential for realising distributed quantum computation and quantum communication. Entangled photons are a key resource, with applications such as quantum key distribution, quantum relays, and quantum repeaters. All components integrated in a quantum network must be synchronised and therefore comply with a certain clock frequency. In quantum key distribution, the most mature technology, clock rates have reached and exceeded 1GHz. Here we show the first electrically pulsed sub-Poissonian entangled photon source compatible with existing fiber networks operating at this clock rate. The entangled LED is based on InAs/InP quantum dots emitting in the main telecom window, with a multi-photon probability of less than 10% per emission cycle and a maximum entanglement fidelity of 89%. We use this device to demonstrate GHz clocked distribution of entangled qubits over an installed fiber network between two points 4.6km apart.
