Coherent Interaction of a Few-Electron Quantum Dot with a Terahertz Optical Resonator.

We have investigated light-matter hybrid excitations in a quantum dot (QD) THz resonator coupled system. We fabricate a gate-defined QD near a THz split-ring resonator (SRR) by using a AlGaAs/GaAs two-dimensional electron system. By illuminating the system with THz radiation, the QD shows a current change whose spectrum exhibits coherent coupling between the electrons in the QD and the SRR as well as coupling between the two-dimensional electron system and the SRR. The latter coupling enters the ultrastrong coupling regime and the electron excitation in the QD also exhibits coherent coupling with the SRR with the remarkably large coupling constant, despite the fact that only a few electrons reside in the QD.

Coexistence of Quantum-Spin-Hall and Quantum-Hall-Topological-Insulating States in Graphene/hBN on SrTiO3 Substrate.

SrTiO3 (STO) substrate, a perovskite oxide material known for its high dielectric constant (ɛ), facilitates the observation of various (high-temperature) quantum phenomena. A quantum Hall topological insulating (QHTI) state, comprising two copies of QH states with antiparallel two ferromagnetic edge-spin overlap protected by the U(1) axial rotation symmetry of spin polarization, has recently been achieved in low magnetic field (B) even as high as ≈100 K in a monolayer graphene/thin hexagonal boron nitride (hBN) spacer placed on an STO substrate, thanks to the high ɛ of STO. Despite the use of the heavy STO substrate, however, proximity-induced quantum spin Hall (QSH) states in 2D TI phases, featuring a topologically protected helical edge spin phase within time-reversal-symmetry, is not confirmed. Here, with the use of a monolayer hBN spacer, it is revealed the coexistence of QSH (at B = 0T) and QHTI (at B ≠ 0) states in the same single graphene sample placed on an STO, with a crossover regime between the two at low B. It is also classified that the different symmetries of the two nontrivial helical edge spin phases in the two states lead to different interaction with electron-puddle quantum dots, caused by a local surface pocket of the STO, in the crossover regime, resulting in a spin dephasing only for the QHTI state. The results obtained using STO substrates open the doors to investigations of novel QH spin states with different symmetries and their correlations with quantum phenomena. This exploration holds value for potential applications in spintronic devices.

Electrical Detection of Ultrastrong Coherent Interaction between Terahertz Fields and Electrons Using Quantum Point Contacts.

Light-matter interaction in the ultrastrong coupling regime is attracting considerable attention owing to its applications to coherent control of material properties by a vacuum fluctuation field. However, electrical access to such an ultrastrongly coupled system is very challenging. In this work, we have fabricated a gate-defined quantum point contact (QPC) near the gap of a terahertz (THz) split-ring resonator (SRR) fabricated on a GaAs two-dimensional (2D) electron system. By illuminating the system with external THz radiation, the QPC shows a photocurrent spectrum which exhibits significant anticrossing that arises from coupling between the cyclotron resonance of the 2D electrons and the SRR. The observed photocurrent signal can be explained by energy-selective transmission/reflection of the quantum Hall edge channels at the QPC. Furthermore, at the same gate voltage and magnetic field conditions under which the anticrossing signal was observed, the QPC exhibits anomalous conductance modulation even in the dark environment.

Single PbS colloidal quantum dot transistors.

Colloidal quantum dots are sub-10 nm semiconductors treated with liquid processes, rendering them attractive candidates for single-electron transistors operating at high temperatures. However, there have been few reports on single-electron transistors using colloidal quantum dots due to the difficulty in fabrication. In this work, we fabricated single-electron transistors using single oleic acid-capped PbS quantum dot coupled to nanogap metal electrodes and measured single-electron tunneling. We observed dot size-dependent carrier transport, orbital-dependent electron charging energy and conductance, electric field modulation of the electron confinement potential, and the Kondo effect, which provide nanoscopic insights into carrier transport through single colloidal quantum dots. Moreover, the large charging energy in small quantum dots enables single-electron transistor operation even at room temperature. These findings, as well as the commercial availability and high stability, make PbS quantum dots promising for the development of quantum information and optoelectronic devices, particularly room-temperature single-electron transistors with excellent optical properties.

Terahertz Detectors Using Microelectromechanical System Resonators.

The doubly clamped microelectromechanical system (MEMS) beam resonators exhibit extremely high sensitivity to tiny changes in the resonance frequency owing to their high quality (Q-) factors, even at room temperature. Such a sensitive frequency-shift scheme is very attractive for fast and highly sensitive terahertz (THz) detection. The MEMS resonator absorbs THz radiation and induces a temperature rise, leading to a shift in its resonance frequency. This frequency shift is proportional to the amount of THz radiation absorbed by the resonator and can be detected and quantified, thereby allowing the THz radiation to be measured. In this review, we present an overview of the THz bolometer based on the doubly clamped MEMS beam resonators in the aspects of working principle, readout, detection speed, sensitivity, and attempts at improving the performance. This allows one to have a comprehensive view of such a novel THz detector.

Sub-4 nm mapping of donor-acceptor organic semiconductor nanoparticle composition.

We report, for the first time, sub-4 nm mapping of donor : acceptor nanoparticle composition in eco-friendly colloidal dispersions for organic electronics. Low energy scanning transmission electron microscopy (STEM) energy dispersive X-ray spectroscopy (EDX) mapping has revealed the internal morphology of organic semiconductor donor : acceptor blend nanoparticles at the sub-4 nm level. A unique element was available for utilisation as a fingerprint element to differentiate donor from acceptor material in each blend system. Si was used to map the location of donor polymer PTzBI-Si in PTzBI-Si:N2200 nanoparticles, and S (in addition to N) was used to map donor polymer TQ1 in TQ1:PC71BM nanoparticles. For select material blends, synchrotron-based scanning transmission X-ray microscopy (STXM), was demonstrated to remain as the superior chemical contrast technique for mapping organic donor : acceptor morphology, including for material combinations lacking a unique fingerprint element (e.g. PTQ10:Y6), or systems where the unique element is in a terminal functional group (unsaturated, dangling bonds) and can hence be easily damaged under the electron beam, e.g. F on PTQ10 donor polymer in the PTQ10:IDIC donor : acceptor blend. We provide both qualitative and quantitative compositional mapping of organic semiconductor nanoparticles with STEM EDX, with sub-domains resolved in nanoparticles as small as 30 nm in diameter. The sub-4 nm mapping technology reported here shows great promise for the optimisation of organic semiconductor blends for applications in organic electronics (solar cells and bioelectronics) and photocatalysis, and has further applications in organic core-shell nanomedicines.

Thermal and Optical Properties of Porous Nanomesh Structures for Sensitive Terahertz Bolometric Detection.

Terahertz (THz) electromagnetic waves are attractive for use in nondestructive and biocompatible sensing applications. Thermal sensors are widely used for THz detection owing to the small photon energies of THz radiation, where this requires materials with low thermal conductivity and a small heat capacity to ensure the sensitive and fast operation of the sensors. In this study, we investigated the thermal and optical properties of porous nanomesh structures for sensitive THz bolometric detection. Nanometer (nm)-scale hole array structures were formed on gallium arsenide (GaAs) microelectromechanical system (MEMS) beams to improve their thermal properties. The thermal conductance of the porous MEMS beams was obtained by measuring their thermal bandwidths; it was found to decrease by as much as ~90% when the porosity (P) of the porous nanostructure was increased to ~0.69. We also measured the THz absorptance of the porous hole array structure. The results show that although the porous nanostructure has a much smaller area than the bulk material, it maintained a high coefficient of THz absorptance because the featured size was much smaller than the THz wavelength. The measured absorptance agreed well with that calculated by using the Drude model. These results demonstrate that the porous nanomesh structure is promising for developing highly sensitive THz thermal sensors.

Inelastic Electron Transport and Ortho-Para Fluctuation of Water Molecule in H2O@C60 Single Molecule Transistors.

Light molecules such as H2O are the systems in which we can have access to quantum mechanical information on their constituent atoms. Here, we have investigated electron transport through H2O@C60 single molecule transistors (SMTs). The H2O@C60 SMTs exhibit Coulomb stability diagrams that show multiple tunneling-induced excited states below 30 meV. Furthermore, we have performed terahertz (THz) photocurrent spectroscopy on H2O@C60 SMTs and confirmed the same excitations. From comparison between experiment and theory, the excitations observed below 10 meV are identified to be the quantum rotational excitations of the water molecule. Surprisingly, the quantum rotational excitations of both para- and ortho-water molecule are observed simultaneously even for a single water molecule, indicating that the fluctuation between the ortho- and para-water states takes place in a time scale shorter than our measurement time (∼1 min), probably by the interaction between the encapsulated water molecule and conducting electrons.

Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires.

We demonstrate a controllable p-n junction in a three-dimensional Dirac semimetal (DSM) Cd3As2 nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n-n and p-p) and bipolar (n-p and n-p) regimes, where p-n junctions are formed. The conductance in the p-n junction regimes decreases drastically when a magnetic field is applied perpendicular to the nanowire. In these regimes, the device shows quantum dot behavior, whereas the device exhibits conductance plateaus in the n-n regime at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.

Evaporative electron cooling in asymmetric double barrier semiconductor heterostructures.

Rapid progress in high-speed, densely packed electronic/photonic devices has brought unprecedented benefits to our society. However, this technology trend has in reverse led to a tremendous increase in heat dissipation, which degrades device performance and lifetimes. The scientific and technological challenge henceforth lies in efficient cooling of such high-performance devices. Here, we report on evaporative electron cooling in asymmetric Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) double barrier heterostructures. Electron temperature, Te, in the quantum well (QW) and that in the electrodes are determined from photoluminescence measurements. At 300 K, Te in the QW is gradually decreased down to 250 K as the bias voltage is increased up to the maximum resonant tunneling condition, whereas Te in the electrode remains unchanged. This behavior is explained in term of the evaporative cooling process and is quantitatively described by the quantum transport theory.

Terahertz Spectroscopy of Individual Carbon Nanotube Quantum Dots.

We have investigated the electronic structures of metallic carbon nanotube quantum dots (CNT QDs) by terahertz-induced photocurrent spectroscopy. Sharp peaks due to intersublevel transitions in the CNT QDs are observed at the sublevel energy spacings expected from the linear band dispersion. The line width of the photocurrent peak is as narrow as 0.3 meV and is governed by the tunnel coupling with the electrodes, indicating that the scattering time of electrons in the present CNTs is comparable to or longer than 10 ps. The observation of a sharp absorption peak at the bare quantization energy was not consistent with the Tomonaga-Luttinger liquid theory.

Single-electron charge sensing in self-assembled quantum dots.

Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating transport phenomena and outstanding optical functionalities. In this paper, we report charge sensing experiments in self-assembled quantum dots. We choose two adjacent dots, and fabricate source and drain electrodes on each dot, in which either dot works as a charge sensor for the other target dot. The sensor dot current significantly changes when the number of electrons in the target dot changes by one, demonstrating single-electron charge sensing. We have also demonstrated real-time detection of single-electron tunnelling events. This charge sensing technique will be an important step towards combining efficient electrical readout of single-electron with intriguing quantum transport physics or advanced optical and photonic technologies developed for self-assembled quantum dots.

Near-Field Radiative Nanothermal Imaging of Nonuniform Joule Heating in Narrow Metal Wires.

Probing spatial variation of temperature at the nanoscale provides key information for exploring diverse areas of modern science and technology. Despite significant progress in the development of contact thermometers with high spatial resolution, one inherent disadvantage is that the quantitative analysis of temperature can be complicated by the direct thermal contact. On the other hand, noncontact infrared radiation thermometer is free from such contact-induced disturbance, but suffers from insufficient spatial resolution stemming from diffraction-limit in the micrometer range. Combining a home-built sensitive infrared microscope with a noncontact scattering probe, we detected fluctuating electromagnetic evanescent fields on locally heated material surface, and thereby mapped temperature distribution in subwavelength scales. We visualize nanoscale Joule heating on current-carrying metal wires and find localized "hot-spots" developing along sharp corners of bended wires in the temperature mapping. Simulation calculations give quantitative account of the nanoscale temperature distribution, definitely indicating that the observed effect is caused by the nonuniform energy dissipation due to the current-crowding effect. The equipment in this work is a near-field version of infrared radiation thermometer with a spatial resolution far below the detection wavelength (<100 nm, or λ/140) in which local temperature distribution of operating nanoscale devices can be noninvasively mapped with a temperature resolution ∼2 K at room-temperature.

Quantum Dots Formed in Three-dimensional Dirac Semimetal Cd3As2 Nanowires.

We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd3As2 nanowires using two electrostatically tuned p-n junctions with a gate and magnetic fields. The linear conductance measured as a function of gate voltage under high magnetic fields is strongly suppressed at the Dirac point close to zero conductance, showing strong conductance oscillations. Remarkably, in this regime, the Cd3As2 nanowire device exhibits Coulomb diamond features, indicating that a clean single QD forms in the Dirac semimetal nanowire. Our results show that a p-type QD can be formed between two n-type leads underneath metal contacts in the nanowire by applying gate voltages under strong magnetic fields. Analysis of the quantum confinement in the gapless band structure confirms that p-n junctions formed between the p-type QD and two neighboring n-type leads under high magnetic fields behave as resistive tunnel barriers due to cyclotron motion, resulting in the suppression of Klein tunneling. The p-type QD with magnetic field-induced confinement shows a single hole filling. Our results will open up a route to quantum devices such as QDs or quantum point contacts based on Dirac and Weyl semimetals.

Stochastic resonance in bistable atomic switches.

We have investigated the conductance of bistable gold atomic switches as a function of periodic input voltages mixed with a random noise. With increasing noise amplitude, the atomic switches biased below the threshold voltage for conductance switching start exhibiting switching in conductance between two stable states. Clear synchronization between the input and output signals is observed when an optimized noise amplitude is mixed with the periodic input voltage, even when the atomic switches are driven by an input voltage as low as approximately 10% of the threshold voltage. The observed behavior can be explained in terms of the stochastic resonance. The results presented here indicate that utilization of noise can dramatically reduce the operation voltage of metal atomic switches.

Terahertz Field Enhancement and Photon-Assisted Tunneling in Single-Molecule Transistors.

We have investigated the electron transport in single-C_{60}-molecule transistors under the illumination of intense monochromatic terahertz (THz) radiation. By employing an antenna structure with a sub-nm-wide gap, we concentrate THz radiation beyond the diffraction limit and focus it onto a single molecule. Photon-assisted tunneling (PAT) in the single molecule transistors is observed in both the weak-coupling and Kondo regimes. The THz power dependence of the PAT conductance indicates that when the incident THz intensity is a few tens of mW, the THz field induced at the molecule exceeds 100 kV/cm, which is enhanced by a factor of ~10^{5} from the field in the free space.

Terahertz intersublevel transitions in single self-assembled InAs quantum dots with variable electron numbers.

We propose a method for performing terahertz spectroscopy on nanometer (nm)-scale systems by using metal nanogap electrodes. Intersublevel transition spectra of single self-assembled InAs quantum dots (QDs) have been measured with high signal/noise ratios by using a single electron transistor geometry that consists of a QD and nanogap metal electrodes as a terahertz detector. Photocurrent distribution with respect to the Coulomb diamonds indicates that there are two mechanisms for the photocurrent generation. When the p shell was fully occupied, we observed rather simple photocurrent spectra induced by the p → d transitions. However, when the p shell was half-filled, the photocurrent spectra exhibited a markedly different behavior, which we attribute to the fluctuation in electron configuration when the empty p state is filled back from the electrodes.

MEMS reconfigurable metamaterial for terahertz switchable filter and modulator.

We demonstrate a reconfigurable metamaterial developed by surface micromachining technique on a low loss quartz substrate for a tunable terahertz filter application. The device implements a reconfigurable RF-MEMS (radio frequency - micro electro mechanical systems) capacitor within a split-ring resonator (SRR). Time-domain spectroscopy confirms that the tunability of the SRR resonance and thus the terahertz transmittance are electrostatically controlled by the RF-MEMS capacitor. Due to the high transparency and low loss of quartz used as a substrate, the device exhibits a high contrast switching performance of 16.5 dB at 480 GHz, which is also supported by the terahertz dynamic modulation measurement results. The device shows promise for tunable transmission terahertz optics.

Waveguide coupled air-slot photonic crystal nanocavity for optomechanics.

We investigate a structure consisting of two parallel GaAs thin membranes with an air-slot type photonic crystal (PhC) nanocavity, which is designed to achieve highly efficient optomechanical coupling. The structure shows a large theoretical optomechanical coupling factor of ~990 GHz/nm. We designed, fabricated, and performed optical characterization of a system consisting of a grating coupler, a PhC waveguide, and a PhC nanocavity, which achieves highly efficient vertical emission using the band folding technique. The experimentally obtained overall efficiency is about 0.3% for a microscope objective lens with a moderate numerical aperture of 0.65. This waveguide coupled air-slot PhC nanocavity with efficient vertical light coupling can be useful for on-chip cavity optomechanical systems.

Large modulation of zero-dimensional electronic states in quantum dots by electric-double-layer gating.

Electrical manipulation and read-out of quantum states in zero-dimensional nanostructures by nano-gap metal electrodes is expected to bring about innovation in quantum information processing. However, electrical tunability of the quantum states in zero-dimensional nanostructures is limited by the screening of gate electric fields. Here we demonstrate a new way to realize wide-range electrical modulation of quantum states of single self-assembled InAs quantum dots (QDs) with a liquid-gated electric-double-layer (EDL) transistor geometry. The efficiency of EDL gating is 6-90 times higher than that of the conventional solid gating. The quantized energy level spacing is modulated from ~15 to ~25 meV, and the electron g-factor is electrically tuned over a wide range. Such a field effect tuning can be explained by the modulation in the confinement potential of electrons in the QDs. The EDL gating on the QDs also provides potential compatibility with optical manipulation of single-electron charge/spin states.