RESUMEN
ß-Crystalline phase gallium oxide (ß-Ga2O3) is an ultrawide bandgap material with prospective applications in electronics and deep ultraviolet (DUV) optoelectronics and optics. The monoclinic crystal structure of ß-Ga2O3 results in optical anisotropy to incident light with different polarization states. This attribute can lead to different optical applications in the DUV. In this article, we investigated the optical properties of ß-Ga2O3 thin films grown by pulsed laser deposition technique on sapphire substrates with different crystallographic orientations. Marked in-plane polarization anisotropy, determined by reflectance and Raman spectroscopy, was observed for ß-Ga2O3 films deposited on an r-cut sapphire substrate. In contrast, isotropic optical properties were observed in ß-Ga2O3 films deposited on a c-cut sapphire substrate.
RESUMEN
Vanadium dioxide (VO2) has been proposed as a phase-change material in tunable photonic and optoelectronic devices. In such devices, a thin layer of VO2 is typically deposited on metallic or insulating surfaces. In this Letter, we report the reflectance spectra of a subwavelength structure consisting of a thin layer of VO2 deposited on a gold film in the near-infrared spectral range, particularly near the wavelength of 1550â nm, which is significant for telecommunication applications. Our results indicate that in the insulating phase of VO2, the air/VO2/Au structure can be considered as a Gires-Tournois resonant cavity whose maximum absorption wavelength can be tuned by adjusting the thickness of the VO2 layer. In contrast, in the metallic phase of VO2, the reflectance of the structure increases by an amount of the order of a few tens of units. The proposed structure can prospectively lead to new design concepts in tunable photonic and optoelectronic devices.
RESUMEN
The organic polymer solar cell is recognized as one of the most competitive technologies of the next generation. Au nanoparticles and ZnO nanorods were combined to improve the inverted-structure low-bandgap polymer solar cells and enhance the absorption and efficiency of the devices. However, the Au nanoparticles tend to aggregate in solution, thus reducing the localized surface plasmon resonance (LSPR) effect. The cluster effect on the spectral range of enhancement in the absorption is investigated and the absorption characteristics of the LSPR receive proper modification through our experiment. After reducing the number of Au nanoparticle clusters, the LSPR effect in the devices was clearly verified. The proper combination of the Au nanoparticles and ZnO nanorods leads to the power conversion efficiency of the PTB7 : PC71BM inverted organic solar cell reaching 8.04% after optimizing the process conditions.
RESUMEN
We report phosphorescent sensitized fluorescent near-infrared (NIR) light-emitting electrochemical cells (LECs) utilizing a phosphorescent cationic transition metal complex [Ir(ppy)(2)(dasb)](+)(PF(6)(-)) (where ppy is 2-phenylpyridine and dasb is 4,5-diaza-9,9'-spirobifluorene) as the host and two fluorescent ionic NIR emitting dyes 3,3'-diethyl-2,2'-oxathiacarbocyanine iodide (DOTCI) and 3,3'-diethylthiatricarbocyanine iodide (DTTCI) as the guests. Photoluminescence measurements show that the host-guest films containing low guest concentrations effectively quench host emission due to efficient host-guest energy transfer. Electroluminescence (EL) measurements reveal that the EL spectra of the NIR LECs doped with DOTCI and DTTCI center at ca. 730 and 810 nm, respectively. Moreover, the DOTCI and DTTCI doped NIR LECs achieve peak EQE (power efficiency) up to 0.80% (5.65 mW W(-1)) and 1.24% (7.84 mW W(-1)), respectively. The device efficiencies achieved are among the highest reported for NIR LECs and thus confirm that phosphorescent sensitized fluorescence is useful for achieving efficient NIR LECs.