High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices.

We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. The optimization of these parameters leads to a successful separation of operation regimes; we demonstrate experimentally three-color photodiodes without using additional terminal contacts. As the applied bias voltage varies, the photodiodes exhibit sequentially the behavior of three different colors, corresponding to the bandgap of three absorbers. Well defined cut-offs and high quantum efficiency in each channel are achieved. Such all-in-one devices also provide the versatility of working as single or dual-band photodetectors at high operating temperature. With this design, by retaining the simplicity in device fabrication, this demonstration opens the prospect for three-color infrared imaging.

Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application.

An InAs/GaSb type-II superlattice-based mid-wavelength infrared (MWIR) 320×256 unipolar focal plane array (FPA) using pMp architecture exhibited excellent infrared image from 81 to 150 K and ∼98% operability, which illustrated the possibility for high operation temperature application. At 150 K and -50 mV operation bias, the 27 µm pixels exhibited dark current density to be 1.2×10(-5) A/cm(2), with 50% cutoff wavelength of 4.9 µm, quantum efficiency of 67% at peak responsivity (4.6 µm), and specific detectivity of 1.2×10(12) Jones. At 90 K and below, the 27 µm pixels exhibited system limited dark current density, which is below 1×10(-9) A/cm(2), and specific detectivity of 1.5×10(14) Jones. From 81 to 100 K, the FPA showed ∼11 mK NEDT by using F/2.3 optics and a 9.69 ms integration time.

Active and passive infrared imager based on short-wave and mid-wave type-II superlattice dual-band detectors.

A versatile dual-band detector capable of active and passive use is demonstrated using short-wave (SW) and mid-wave (MW) IR type-II superlattice photodiodes. A bilayer etch-stop scheme is introduced for back-side-illuminated detectors, which enhanced the external quantum efficiency both in the SWIR and MWIR spectral regions. Temperature-dependent dark current measurements of pixel-sized 27 µm detectors found the dark current density to be ~1 × 10(-5) A/cm(2) for the ~4.2 µm cutoff MWIR channel at 140 K. This corresponded to a reasonable imager noise equivalent difference in temperature of ~49 mK using F/2.3 optics and a 10 ms integration time (t(int)), which lowered to ~13 mK at 110 K using t(int)=30 ms, illustrating the potential for high-temperature operation. The SWIR channel was found to be limited by readout noise below 150 K. Excellent imagery from the dual-band imager exemplifying pixel coincidence is shown.