Dual-axis control of magnetic anisotropy in a single crystal Co2MnSi thin film through piezo-voltage-induced strain.

Voltage controlled magnetic anisotropy (VCMA) has been considered as an effective method in traditional magnetic devices with lower power consumption. In this article, we have investigated the dual-axis control of magnetic anisotropy in Co2MnSi/GaAs/PZT hybrid heterostructures through piezo-voltage-induced strain using longitudinal magneto-optical Kerr effect (LMOKE) microscopy. The major modification of in-plane magnetic anisotropy of the Co2MnSi thin film is controlled obviously by the piezo-voltages of the lead zirconate titanate (PZT) piezotransducer, accompanied by the coercivity field and magnetocrystalline anisotropy significantly manipulated. Because in-plane cubic magnetic anisotropy and uniaxial magnetic anisotropy coexist in the Co2MnSi thin film, the initial double easy axes of cubic split to an easiest axis (square loop) and an easier axis (two-step loop). While the stress direction is parallel to the [1-10] easiest axis (sample I), the square loop of the [1-10] direction could transform to a two-step loop under the negative piezo-voltages (compressed state). At the same time, the initial two-step loop of the [110] axis simultaneously changes to a square loop (the easiest axis). Otherwise, we designed and fabricated the sample II in which the PZT stress is parallel to the [110] two-step axis. The phenomenon of VCMA was also obtained along the [110] and [1-10] directions. However, the manipulated results of sample II were in contrast to those of the sample I under the piezo-voltages. Thus, an effective dual-axis regulation of the in-plane magnetization rotation was demonstrated in this work. Such a finding proposes a more optimized method for the magnetic logic gates and memories based on voltage-controlled magnetic anisotropy in the future.

Nomogram for accurate and quantitative prediction of the risk of psoriatic arthritis in Chinese adult patients with moderate and severe plaque psoriasis.

BACKGROUND: Psoriatic arthritis (PsA) is an inflammatory form of arthritis that appears approximately 7-10 years after psoriasis and remains undiagnosed in most of patients. Currently, only a few quantitative and succinct PsA-risk prediction models are available. OBJECTIVES: The aim of this study was to establish and validate a prediction model for quantitatively assessing the risk of PsA in moderate and severe plaque psoriasis patients. MATERIALS & METHODS: A non-interventional and cross-sectional study was conducted. Demographic, clinical, and laboratory records were collected and blindly reviewed. Logistic regression was used to develop this prediction model. With C-index and calibration curve, internal validation was performed. Five-fold cross validation, external validation and decision curve analysis (DCA) were also applied to assess this model. RESULTS: Among 405 patients, 111 patients had PsA. Arthralgia (OR = 39.346; 95% CI: 20.139-82.579), C-reactive protein (OR = 2.008; 95% CI: 1.051-3.838), lymphocyte level (OR = 0.341; 95% CI: 0.177-0.621), hypertension (OR = 0.235; 95% CI: 0.077-0.660) and disease duration (OR = 1.033; 95% CI: 0.998-1.071) were identified as potential predictors affecting the risk of transition from moderate and severe PsO to PsA. C-index for the prediction nomogram was 0.911 (95% CI: 0.879-0.943), and was confirmed to be 0.905 through 1000-time bootstrapping internal validation. Cross validation and external validation were preformed and proved the accuracy and generalizability of this prediction model. CONCLUSION: This study establishes a quantitative predictive nomogram with good predictive power for assessing the risk of PsA in patients with moderate and severe PsO.

Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate.

In this study, novel p-type scallop-shaped fin field-effect transistors (S-FinFETs) are fabricated using an all-last high-k/metal gate (HKMG) process on bulk-silicon (Si) substrates for the first time. In combination with the structure advantage of conventional Si nanowires, the proposed S-FinFETs provide better electrostatic integrity in the channels than normal bulk-Si FinFETs or tri-gate devices with rectangular or trapezoidal fins. It is due to formation of quasi-surrounding gate electrodes on scalloping fins by a special Si etch process. The entire integration flow of the S-FinFETs is fully compatible with the mainstream all-last HKMG FinFET process, except for a modified fin etch process. The drain-induced barrier lowering and subthreshold swing of the fabricated p-type S-FinFETs with a 14-nm physical gate length are 62 mV/V and 75 mV/dec, respectively, which are much better than those of normal FinFETs with a similar process. With an improved short-channel-effect immunity in the channels due to structure modification, the novel structure provides one of possibilities to extend the FinFET scalability to sub-10-nm nodes with little additional process cost.