RESUMEN
Magnetic skyrmions have great potential for developing novel spintronic devices. The electrical manipulation of skyrmions has mainly relied on current-induced spin-orbit torques. Recently, it was suggested that the skyrmions could be more efficiently manipulated by surface acoustic waves (SAWs), an elastic wave that can couple with magnetic moment via the magnetoelastic effect. Here, by designing on-chip piezoelectric transducers that produce propagating SAW pulses, we experimentally demonstrate the directional motion of Néel-type skyrmions in Ta/CoFeB/MgO/Ta multilayers. We find that the shear horizontal wave effectively drives the motion of skyrmions, whereas the elastic wave with longitudinal and shear vertical displacements (Rayleigh wave) cannot produce the motion of skyrmions. A longitudinal motion along the SAW propagation direction and a transverse motion due to topological charge are simultaneously observed and further confirmed by our micromagnetic simulations. This work demonstrates that acoustic waves could be another promising approach for manipulating skyrmions, which could offer new opportunities for ultra-low power skyrmionics.
RESUMEN
Despite its important role in understanding ultrafast spin dynamics and revealing novel spin/orbit effects, the mechanism of the terahertz (THz) emission from a single ferromagnetic nanofilm upon a femtosecond laser pump still remains elusive. Recent experiments have shown exotic symmetry, which is not expected from the routinely adopted mechanism of ultrafast demagnetization. Here, by developing a bidirectional pump-THz emission spectroscopy and associated symmetry analysis method, we set a benchmark for the experimental distinction of the THz emission induced by various mechanisms. Our results unambiguously unveil a new mechanismâanomalous Nernst effect (ANE) induced THz emission due to the ultrafast temperature gradient created by a femtosecond laser. Quantitative analysis shows that the THz emission exhibits interesting thickness dependence where different mechanisms dominate at different thickness ranges. Our work not only clarifies the origin of the ferromagnetic-based THz emission but also offers a fertile platform for investigating the ultrafast optomagnetism and THz spintronics.
RESUMEN
The epitaxial growth of high-index Fe films on MgO(113) substrates is successfully achieved using direct current (DC) magnetron sputtering, despite the significant lattice constant mismatch between Fe and MgO. X-ray diffraction (XRD) analysis is employed to characterize the crystal structure of Fe films, revealing an Fe(103) out-of-plane orientation. Furthermore, our investigation reveals that the Fe[010] direction is parallel to the MgO[11¯0] direction within the films plane. These findings provide valuable insights into the growth of high-index epitaxial films on substrates with large lattice constant mismatch, thereby contributing to the advancement of research in this field.
RESUMEN
The spin-to-charge conversion of the Ag/Bi interface is studied in a device in which a spin current can be injected from either side selectively. The charge voltages generated by the two counterpropagating spin currents show opposite signs, that is consistent with the inverse spin Hall effect rather than the well-accepted inverse Rashba-Eldestein effect in the Ag/Bi bilayer. Femtosecond laser is further employed to generate the spin-current-induced terahertz signal in a Ag/Bi bilayer, which shows no evidence for the inverse Rashba-Eldestein effect, either. This work provides a clear-cut method to identify the spin-to-charge mechanism in a Rashba electronic state and delivers new understanding for the relevant spin-transport phenomena.
RESUMEN
van der Waals crystals exhibit excellent material performance when exfoliated to few-atomic-layer thickness. In contrast, the van der Waals thin films more than 10 nm thick are believed to show bulk properties, in which outstanding material performance is rarely found. Here we report the largest anomalous Hall conductivity observed so far in a 170 nm van der Waals ferromagnetic 1T-CrTe2 flake, which reaches 67,000 Ω-1 cm-1. Such a colossal anomalous Hall conductivity in 1T-CrTe2 is dominated by the extrinsic skew scattering process rather than the intrinsic Berry phase effect, as evidenced by the linear relation between the anomalous Hall conductivity and the longitudinal conductivity. Defying the dilemma of mutually exclusive large anomalous Hall angle and high electric conductivity for most ferromagnets, 1T-CrTe2 achieves both in a thin film sample. Considering the shared physics of the anomalous Hall effect and the spin Hall effect, our finding offers a guideline for searching large spin Hall materials of high conductivity which may overcome the bottleneck of overheating in spintronics devices.
RESUMEN
The presence of two-dimensional (2D) layer-stacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS3/Fe3GeTe2 when the temperature is below the Neel temperature of MnPS3. Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS3/Fe3GeTe2 heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe3GeTe2 during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.
RESUMEN
Half-metallic Heusler alloys are attracting considerable attention because of their unique half-metallic band structures, which exhibit high spin polarization and yield huge magnetoresistance ratios. Besides serving as ferromagnetic electrodes, Heusler alloys also have the potential to host spin-charge conversion. Here, we report on the spin-charge conversion effect in the prototypical Heusler alloy NiMnSb. An unusual charge signal was observed with a sign change at low temperature, which can be manipulated by film thickness and ordering structure. It is found that the spin-charge conversion has two contributions. First, the interfacial contribution causes a negative voltage signal, which is almost constant versus temperature. The second contribution is temperature dependent because it is dominated by minority states due to thermally excited magnons in the bulk part of the film. This work provides a pathway for the manipulation of spin-charge conversion in ferromagnetic metals by interface-bulk engineering for spintronic devices.
RESUMEN
Distinct from all the existing methods for determining the spin Hall angle with bilayers, we have developed a new approach based on the mesoscopic H-shaped structure, which generates and detects pure spin current in a single metal. Using this approach we have unequivocally addressed the long-standing controversy of the magnitude of the spin Hall angle of gold. By exploiting the long spin diffusion length of Cu and the large spin-orbit coupling of Bi, we have realized a very large spin Hall effect in 10 nm Cu films delta doped with 0.15 nm of Bi. This new artificial material can generate a large spin-orbit torque to switch an adjacent Fe layer. We have thus demonstrated new artificial materials with a simultaneously large spin Hall angle and long spin diffusion length.
RESUMEN
Colossal magnetoresistance (CMR) refers to a large change in electrical conductivity induced by a magnetic field in the vicinity of a metal-insulator transition and has inspired extensive studies for decades1,2. Here we demonstrate an analogous spin effect near the Néel temperature, TN = 296 K, of the antiferromagnetic insulator Cr2O3. Using a yttrium iron garnet YIG/Cr2O3/Pt trilayer, we injected a spin current from the YIG into the Cr2O3 layer and collected, via the inverse spin Hall effect, the spin signal transmitted into the heavy metal Pt. We observed a two orders of magnitude difference in the transmitted spin current within 14 K of the Néel temperature. This transition between spin conducting and non-conducting states was also modulated by a magnetic field in isothermal conditions. This effect, which we term spin colossal magnetoresistance (SCMR), has the potential to simplify the design of fundamental spintronics components, for instance, by enabling the realization of spin-current switches or spin-current-based memories.
RESUMEN
Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y3Fe5O12|CoO|Co, we find that the detection amplitude of spin currents emitted by ferromagnetic resonance spin pumping depends on the relative alignment of the Y3Fe5O12 and Co magnetization. This yields a spin valve-like behavior with an amplitude change of 120% in our systems. We demonstrate the reliability of the effect and identify its origin by both temperature-dependent and power-dependent measurements.
RESUMEN
Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature that increases with the NiO thickness. This is contrary to a conventional SMR theory picture applied to the Pt/YIG bilayer, which always predicts a positive SMR. The negative SMR is found to persist even when NiO blocks the spin transmission between Pt and YIG, indicating it is governed by the spin current response of the NiO layer. We explain the negative SMR by the NiO "spin flop" coupled with YIG, which can be overridden at higher temperature by positive SMR contribution from YIG. This highlights the role of magnetic structure in antiferromagnets for transport of pure spin current in multilayers.
RESUMEN
Spin fluctuation and transition have always been one of the central topics of magnetism and condensed matter science. Experimentally, the spin fluctuation is found transcribed onto scattering intensity in the neutron-scattering process, which is represented by dynamical magnetic susceptibility and maximized at phase transitions. Importantly, a neutron carries spin without electric charge, and therefore it can bring spin into a sample without being disturbed by electric energy. However, large facilities such as a nuclear reactor are necessary. Here we show that spin pumping, frequently used in nanoscale spintronic devices, provides a desktop microprobe for spin transition; spin current is a flux of spin without an electric charge and its transport reflects spin excitation. We demonstrate detection of antiferromagnetic transition in ultra-thin CoO films via frequency-dependent spin-current transmission measurements, which provides a versatile probe for phase transition in an electric manner in minute devices.
RESUMEN
Applying magnetic fields has been the method of choice to magnetize non-magnetic materials, but they are difficult to focus. The magneto-electric effect and voltage-induced magnetization generate magnetization by applied electric fields, but only in special compounds or heterostructures. Here we demonstrate that a simple metal such as gold can be magnetized by a temperature gradient or magnetic resonance when in contact with a magnetic insulator by observing an anomalous Hall-like effect, which directly proves the breakdown of time-reversal symmetry. Such Hall measurements give experimental access to the spectral spin Hall conductance of the host metal, which is closely related to other spin caloritronics phenomena such as the spin Nernst effect and serves as a reference for theoretical calculation.
RESUMEN
We derive a general scaling relation for the anomalous Hall effect in ferromagnetic metals involving multiple competing scattering mechanisms, described by a quadratic hypersurface in the space spanned by the partial resistivities. We also present experimental findings, which show strong deviation from previously found scaling forms when different scattering mechanisms compete in strength but can be nicely explained by our theory.
RESUMEN
The anomalous Hall effect in epitaxial face-centered-cubic Co film grown by molecular beam epitaxy on MgO(001) is investigated. The intrinsic anomalous Hall conductivity is separated from the scattering-related extrinsic contributions and determined to be 727 Ω(-1) cm(-1) and temperature independent. This result provides well defined experimental data for further theoretical justification.
