Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change material.

We present the mechanisms underlying the redshifted and blueshifted photoluminescence (PL) of quantum dots (QDs) upon amorphization of phase change material (PCM). We calculated the stress and energy shift distribution induced by volume expansion using finite element method. Simulation result reveals that redshift is obtained beneath the flat part of amorphous mark, while blueshift is obtained beneath the edge region of amorphous mark. Simulation result is accompanied by two experimental studies; two-dimensional PL intensity mapping of InAs/InP QD sample deposited by a layer of PCM, and an analysis on the relationship between PL intensity ratio and energy shift were performed.