Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction.

Memristors, a cornerstone for neuromorphic electronics, respond to the history of electrical stimuli by varying their electrical resistance across a continuum of states. Much effort has been recently devoted to developing an analogous response to optical excitation. Here we realize a novel tunnelling photo-memristor whose behaviour is bimodal: its resistance is determined by the dual electrical-optical history. This is obtained in a device of ultimate simplicity: an interface between a high-temperature superconductor and a transparent semiconductor. The exploited mechanism is a reversible nanoscale redox reaction between both materials, whose oxygen content determines the electron tunnelling rate across their interface. The redox reaction is optically driven via an interplay between electrochemistry, photovoltaic effects and photo-assisted ion migration. Besides their fundamental interest, the unveiled electro-optic memory effects have considerable technological potential. Especially in combination with high-temperature superconductivity which, in addition to facilitating low-dissipation connectivity, brings photo-memristive effects to the realm of superconducting electronics.

An Oxygen Vacancy Memristor Ruled by Electron Correlations.

Resistive switching effects offer new opportunities in the field of conventional memories as well as in the booming area of neuromorphic computing. Here the authors demonstrate memristive switching effects produced by a redox-driven oxygen exchange in tunnel junctions based on NdNiO3 , a strongly correlated electron system characterized by the presence of a metal-to-insulator transition (MIT). Strikingly, a strong interplay exists between the MIT and the redox mechanism, which on the one hand modifies the MIT itself, and on the other hand radically affects the tunnel resistance switching and the resistance states' lifetime. That results in a very unique temperature behavior and endows the junctions with multiple degrees of freedom. The obtained results bring up fundamental questions on the interplay between electronic correlations and the creation and mobility of oxygen vacancies in nickelates, opening a new avenue toward mimicking neuromorphic functions by exploiting the electric-field control of correlated states.

Observation of an antiferromagnetic quantum critical point in high-purity LaNiO3.

Amongst the rare-earth perovskite nickelates, LaNiO3 (LNO) is an exception. While the former have insulating and antiferromagnetic ground states, LNO remains metallic and non-magnetic down to the lowest temperatures. It is believed that LNO is a strange metal, on the verge of an antiferromagnetic instability. Our work suggests that LNO is a quantum critical metal, close to an antiferromagnetic quantum critical point (QCP). The QCP behavior in LNO is manifested in epitaxial thin films with unprecedented high purities. We find that the temperature and magnetic field dependences of the resistivity of LNO at low temperatures are consistent with scatterings of charge carriers from weak disorder and quantum fluctuations of an antiferromagnetic nature. Furthermore, we find that the introduction of a small concentration of magnetic impurities qualitatively changes the magnetotransport properties of LNO, resembling that found in some heavy-fermion Kondo lattice systems in the vicinity of an antiferromagnetic QCP.

Selective-Area Superconductor Epitaxy to Ballistic Semiconductor Nanowires.

Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in nanowires has been shown, the majority of these experiments are marked by significant disorder. In particular, the interfacial inhomogeneity between the superconductor and nanowire is strongly believed to be the main culprit for disorder and the resulting "soft superconducting gap" ubiquitous in tunneling studies of hybrid semiconductor-superconductor systems. Additionally, a lack of ballistic transport in nanowire systems can create bound states that mimic Majorana signatures. We resolve these problems through the development of selective-area epitaxy of Al to InSb nanowires, a technique applicable to other nanowires and superconductors. Epitaxial InSb-Al devices generically possess a hard superconducting gap and demonstrate ballistic 1D superconductivity and near-perfect transmission of supercurrents in the single mode regime, requisites for engineering and controlling 1D topological superconductivity. Additionally, we demonstrate that epitaxial InSb-Al superconducting island devices, the building blocks for Majorana-based quantum computing applications, prepared using selective-area epitaxy can achieve micron-scale ballistic 1D transport. Our results pave the way for the development of networks of ballistic superconducting electronics for quantum device applications.