A Wearable Soft Haptic Communicator Based on Dielectric Elastomer Actuators.

Dielectric elastomer actuators exhibit an unusual combination of large displacements, moderate bandwidth, low power consumption, and mechanical impedance comparable with human skin, making them attractive for haptic devices. In this article, we propose a wearable haptic communication device based on a two-by-two array of dielectric elastomer linear actuators. We briefly describe the architecture of the actuators and their mechanical and electrical integration into a wearable armband. We then characterize the actuators' force, displacement, and thermal properties in a bench-top configuration. We also report on the power and drive circuit design. Finally, we perform a set of preliminary perception evaluations on participants using our haptic device, including detection threshold tests and identification tests for locations and directions on the forearm. Human testing with individual actuators demonstrates that the broadband actuation can be easily perceived on the forearm, providing the basis for both the development of a wearable actuator array and its use in more extensive perception evaluation as described herein.

Deterministic Integration of Out-of-Plane Sensor Arrays for Flexible Electronic Applications.

A design strategy for fully flexible electrode arrays with out-of-plane through polymer vias (TPVs) for monolithic 3D integration of sensor readout circuitry is presented. The TPVs are formed using copper embedded in thin polyimide structure for support. The copper interconnects offer a stable impedance frequency response from DC to 100 kHz (Z ≈ 20 Ω, θ ≈ 0°).

CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications.

Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today's digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered.

Three-terminal nanoelectromechanical switch based on tungsten nitride--an amorphous metallic material.

Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WN x thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WN x switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

Ultrastretchable and flexible copper interconnect-based smart patch for adaptive thermotherapy.

Unprecedented 800% stretchable, non-polymeric, widely used, low-cost, naturally rigid, metallic thin-film copper (Cu)-based flexible and non-invasive, spatially tunable, mobile thermal patch with wireless controllability, adaptability (tunes the amount of heat based on the temperature of the swollen portion), reusability, and affordability due to low-cost complementary metal oxide semiconductor (CMOS) compatible integration.

Flexible nanoscale high-performance FinFETs.

With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.

Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation.

An industry standard 8'' silicon-on-insulator wafer based ultra-thin (1 µm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.