Decoherence and Turbulence Sources in a Long Laser.

We investigate the turn-on process in a laser cavity where the round-trip time is several orders of magnitude greater than the active medium timescales. In this long delay limit, we show that the universal evolution of the photon statistics from thermal to Poissonian distribution involves the emergence of power dropouts. While the largest number of these dropouts vanish after a few round-trips, some of them persist and seed coherent structures similar to dark solitons or Nozaki-Bekki holes described by the complex Ginzburg-Landau equation. These coherent structures connect stationary laser emission domains having different optical frequencies. Moreover, they emit intensity bursts which travel at a different speed, and, depending on the cavity dispersion sign, they may collide with other coherent structures, thus leading to an overall turbulent dynamics. The dynamics is well-modeled by delay differential equations from which we compute the laser coherence time evolution at each round-trip and quantify the decoherence induced by the collisions between coherent structures.

Turbulent coherent structures in a long cavity semiconductor laser near the lasing threshold: publisher's note.

This publisher's note contains corrections to Opt. Lett.45, 4903 (2020)OPLEDP0146-959210.1364/OL.397840.

Turbulent coherent structures in a long cavity semiconductor laser near the lasing threshold.

We report on the formation of novel turbulent coherent structures in a long cavity semiconductor laser near the lasing threshold. Experimentally, the laser emits a series of power dropouts within a roundtrip, and the number of dropouts per series depends on a set of parameters including the bias current. At fixed parameters, the drops remain dynamically stable, repeating over many roundtrips. By reconstructing the laser electric field in the case where the laser emits one dropout per roundtrip and simulating its dynamics using a time-delayed model, we discuss the reasons for long-term sustainability of these solutions. We suggest that the observed dropouts are closely related to the coherent structures of the cubic complex Ginzburg-Landau equation.

Convective Nozaki-Bekki holes in a long cavity OCT laser.

We show, both experimentally and theoretically, that the loss of coherence of a long cavity optical coherence tomography (OCT) laser can be described as a transition from laminar to turbulent flows. We demonstrate that in this strongly dissipative system, the transition happens either via an absolute or a convective instability depending on the laser parameters. In the latter case, the transition occurs via formation of localised structures in the laminar regime, which trigger the formation of growing and drifting puffs of turbulence. Experimentally, we demonstrate that these turbulent bursts are seeded by appearance of Nozaki-Bekki holes, characterised by the zero field amplitude and π phase jumps. Our experimental results are supported with numerical simulations based on the delay differential equations model.

Dispersive Time-Delay Dynamical Systems.

We present a theoretical approach to investigate the effect of dispersion in dynamical systems commonly described by time-delay models. The introduction of a polarization equation provides a means to introduce dispersion as a distributed delay term. The expansion of this term in power series, as usually performed to study the propagation of waves in spatially extended systems, can lead to the appearance of spurious instabilities. This approach is illustrated using a long cavity laser, where in the normal dispersion regime both the experiment and theory show a stable operation, while a modulation instability, commonly referred as the Benjamin-Feir instability, is observed in the anomalous dispersion regime.

Realization of high-contrast gratings operating at 10 µm.

We present a new material pairing that can be used to realize high-contrast gratings at wavelengths of 10 µm and greater. Using only optical lithography, the material pair solves the absorption issue limiting the popular Si/SiO2 pairing from operation above 6 µm. We describe the obstacles that exist with the currently used grating materials for this wavelength range and outline why our chosen materials overcome this obstacle. We numerically demonstrate that gratings utilizing these materials are capable of wideband high reflectivity. We experimentally show that the spectral response of gratings that are fabricated using such a process show good agreement with theoretically predicted performance.

All-optical switching with a dual-state, single-section quantum dot laser via optical injection.

An all-optical switching mechanism via optical injection of an InAs/GaAs quantum dot laser is presented. Relative state suppression in excess of 40 dB is achieved, and experimental switching times of the order of a few hundred picoseconds are demonstrated.

Coherence and incoherence in an optical comb.

We demonstrate a coexistence of coherent and incoherent modes in the optical comb generated by a passively mode-locked quantum dot laser. This is experimentally achieved by means of optical linewidth, radio frequency spectrum, and optical spectrum measurements and confirmed numerically by a delay-differential equation model showing excellent agreement with the experiment. We interpret the state as a chimera state.

Experimental high numerical aperture focusing with high contrast gratings.

We demonstrate high aperture (up to NA~0.64) three-dimensional focusing in free space based on wavefront-engineered diffraction gratings. The grating lens' optical response is tailored by spatially varying the grating ridge and groove width in two dimensions to achieve focal lengths of order 100 µm that are crucial for micro-optical applications. The phase profile of the lens includes multiple 2π phase jumps and was obtained by applying an algorithm for finding the optimal path for both phase and amplitude. Experimental measurements reveal a lateral spot size of 5 µm that is close to the size of a corresponding Airy disk.

Bistable regimes in an optically injected mode-locked laser.

We study experimentally the dynamics of quantum-dot (QD) passively mode-locked semiconductor lasers under external optical injection. The lasers demonstrated multiple dynamical states, with bifurcation boundaries that depended upon the sign of detuning variation. The area of the hysteresis loops grew monotonically at small powers of optical injection and saturated at moderate powers. At high injection levels the hysteresis decreased and eventually disappeared.

Feature issue introduction: quantum dots for photonic applications.

Quantum dots (QDs) are semiconductor nanocrystals with peculiar optoelectronic properties. Their wide application in light-emitting diodes, solar cells, and the medical and defense fields makes them a potential candidate in the area of photonics and biophotonics. In this feature issue of Optical Materials Express, together with Optics Express we focus on different aspects of semiconducting nanocrystals research, especially on the advances in the synthesis, physical properties, and application of QDs.

Transition from unidirectional to delayed bidirectional coupling in optically coupled semiconductor lasers.

We investigate the transition from unidirectional to delayed bidirectional coupling of semiconductor lasers. By tuning the coupling strength in one direction we show how the locking region evolves as a function of the detuning and coupling strength. We consider two representative values of the relaxation oscillation damping: one where the relaxation oscillations are very underdamped and one where they are very overdamped. Qualitatively different dynamical scenarios are shown to emerge for each case. Several features of the delayed bidirectional system can be seen as remaining from the unidirectional system while others clearly arise due to the delayed coupling and are similar to effects seen in delayed feedback configurations.

GaSb/GaAs type-II quantum dots grown by droplet epitaxy.

We demonstrate the formation of GaSb quantum dots (QDs) on a GaAs(001) substrate by droplet epitaxy using molecular beam epitaxy. The high crystal quality and bimodal size distribution of the QDs are confirmed using atomic force and transmission electron microscope images. A staggered type-II QD band structure is suggested by a photoluminescence peak that is blue shifted with increasing excitation intensity, a large emission polarization of 60%, and a long carrier decay time of 11.5 ns. Our research provides a different approach to fabricating high quality GaSb type-II QDs.

Experimental investigation of different regimes of mode-locking in a high repetition rate passively mode-locked semiconductor quantum-dot laser.

We report experimental investigations on a two-section 16-GHz repetition rate InAs/GaAs quantum dot passively mode-locked laser. Near the threshold current, pseudo-periodic Q-switching with complex dynamics is exhibited. Mode-locking operation regimes characterized by different repetition rates and timing jitter levels are encountered up to twice the threshold current. Evolution of the RF spectrum and optical spectrum with current is compared. The different mode-locked regimes are shown to be associated with different spectral and temporal shapes, ranging from 1.3 to 6 ps. This point is discussed by introducing the existence of two different supermodes. Repetition rate evolution and timing jitter increase is attributed to the coupling between the dominant and the secondary supermodes.

Phase-locked mutually coupled 1.3 microm quantum-dot lasers.

Fabry-Perot InAs quantum-dot lasers grown on GaAs substrates are mutually coupled with a delay of several nanoseconds. Stable phase-locked output with narrow linewidth is obtained when the frequency detuning between the two lasers is less than 4 GHz. This simple locking scheme could find application in a variety of photonics applications.

Long-cavity quantum dot laser.

We propose a delay-differential equation to model dynamical instabilities in a quantum dot laser. We focus on a laser with a small gain section and a long empty section. A long cavity reduces the strong damping of the relaxation oscillation frequency. It leads to the appearance of dropouts at the delay period, which evolve to chaos.

Simultaneous achievement of narrow pulse width and low pulse-to-pulse timing jitter in 1.3 microm passively mode-locked quantum-dot lasers.

We have analyzed pulse width and timing jitter in passively mode-locked two-section InAs quantum-dot lasers emitting at 1310 nm and have identified two distinct, extensive mode-locked regions with robust short pulses and low timing jitter. A record combination of 2 ps pulses and 25 fs/cycle timing jitter (500 fs, 1-100 MHz), with 1 mW average output power per facet, is demonstrated.

Low-frequency fluctuations in two-state quantum dot lasers.

We study the feedback-induced instabilities in a quantum dot semiconductor laser emitting in both ground and excited states. Without optical feedback the device exhibits dynamics corresponding to antiphase fluctuations between ground and excited states, while the total output power remains constant. The introduction of feedback leads to power dropouts in the ground state and intensity bursts in the excited state, resulting in a practically constant total output power.

Synchronization and clustering in a multimode quantum dot laser.

We analyze experimentally the intensity oscillations of the longitudinal modes of quantum dot semiconductor lasers. We show that the modal intensities can oscillate chaotically with different average frequencies, but obey a highly organized antiphase dynamics leading to a constant total output power. The fluctuations are in the MHz range. We report the first experimental observation of frequency clustering associated with synchronization. We also observe the propagation of perturbations across the optical spectrum from blue to red.

The linewidth enhancement factor alpha of quantum dot semiconductor lasers.

We show that the various techniques commonly used to measure the linewidth enhancement factor can lead to different values when applied to quantum dot semiconductor lasers. Such behaviour is a direct consequence of the intrinsic capture/escape dynamics of quantum dot materials and of the free carrier plasma effects. This provides an explanation for the wide range of values experimentally measured and the linewidth re-broadening recently measured.