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1.
Phys Rev Lett ; 111(2): 027601, 2013 Jul 12.
Artículo en Inglés | MEDLINE | ID: mdl-23889444

RESUMEN

By combining x-ray excited Auger electron diffraction experiments and multiple scattering calculations we reveal a layer-resolved shift for the Mg KL23L23 Auger transition in MgO ultrathin films (4-6 Å) on Ag(001). This resolution is exploited to demonstrate the possibility of controlling Mg atom incorporation at the MgO/Ag(001) interface by exposing the MgO films to a Mg flux. A substantial reduction of the MgO/Ag(001) work function is observed during the exposition phase and reflects both band-offset variations at the interface and band bending effects in the oxide film.

2.
Phys Rev Lett ; 102(17): 176801, 2009 May 01.
Artículo en Inglés | MEDLINE | ID: mdl-19518806

RESUMEN

Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

3.
Phys Rev Lett ; 90(16): 166601, 2003 Apr 25.
Artículo en Inglés | MEDLINE | ID: mdl-12731988

RESUMEN

We report on experiments in which a spin-polarized current is injected from a GaMnAs ferromagnetic electrode into a GaAs layer through an AlAs barrier. The resulting spin polarization in GaAs is detected by measuring how the tunneling current, to a second GaMnAs ferromagnetic electrode, depends on the orientation of its magnetization. Our results can be accounted for by sequential tunneling with the nonrelaxed spin splitting of the chemical potential, that is, spin accumulation, in GaAs. We discuss the conditions on the hole spin relaxation time in GaAs that are required to obtain the large effects we observe.

5.
Phys Rev B Condens Matter ; 41(3): 1327-1339, 1990 Jan 15.
Artículo en Inglés | MEDLINE | ID: mdl-9993848
6.
7.
Phys Rev Lett ; 61(5): 601-604, 1988 Aug 01.
Artículo en Inglés | MEDLINE | ID: mdl-10039378
8.
Phys Rev B Condens Matter ; 37(15): 8639-8646, 1988 May 15.
Artículo en Inglés | MEDLINE | ID: mdl-9944225
9.
Phys Rev B Condens Matter ; 33(6): 4352-4355, 1986 Mar 15.
Artículo en Inglés | MEDLINE | ID: mdl-9938880
10.
Opt Lett ; 6(1): 48-50, 1981 Jan 01.
Artículo en Inglés | MEDLINE | ID: mdl-19701322

RESUMEN

The amount of asymmetry of saturated-absorption peaks observed outside a cavity with two collinearly counter-propagating Gaussian beams is analyzed at different points in the cross section of the probe beam. Although the total beam exhibits a quasi-symmetric line shape, a spatial distribution of asymmetries with different amounts and signs is obtained versus the distance to the beam axis. A simple model taking account of pure focusing and defocusing effects induced by a saturated Gaussian beam leads to agreement between experiment and theory for the 5944-A neon line in the case of saturated-absorption spectroscopy.

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