1.
Adv Mater
; 25(23): 3222-6, 2013 Jun 18.
Artículo
en Inglés
| MEDLINE
| ID: mdl-23649904
RESUMEN
A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.