Chemical effect on the Van Hove singularity in superconducting kagome metal AV3Sb5 (A = K, Rb, and Cs).

To understand the alkali-metal-dependent material properties of recently discovered AV3Sb5 (A = K, Rb, and Cs), we conducted a detailed electronic structure analysis based on first-principles density functional theory calculations. Contrary to the case of A = K and Rb, the energetic positions of the low-lying Van Hove singularities are reversed in CsV3Sb5, and the characteristic higher-order Van Hove point gets closer to the Fermi level. We found that this notable difference can be attributed to the chemical effect, apart from structural differences. Due to their different orbital compositions, Van Hove points show qualitatively different responses to the structure changes. A previously unnoticed highest lying point can be lowered, locating close to or even below the other ones in response to a reasonable range of bi- and uni-axial strain. Our results can be useful in better understanding the material-dependent features reported in this family and in realizing experimental control of exotic quantum phases.

First principles investigation of screened Coulomb interaction and electronic structure of low-temperature phase TaS2.

By means of ab initio computation schemes, we examine the electronic screening, Coulomb interaction strength, and the electronic structure of a quantum spin liquid candidate monolayer TaS2 in its low-temperature commensurate charge-density-wave phase. Not only local (U) but non-local (V) correlations are estimated within random phase approximation based on two different screening models. Using GW + EDMFT (GW plus extended dynamical mean-field theory) method, we investigate the detailed electronic structure by increasing the level of non-local approximation from DMFT (V=0) to EDMFT and GW + EDMFT.

Strain engineering and the hidden role of magnetism in monolayer VTe2.

Two-dimensional transition-metal dichalcogenides have attracted great attention recently. Motivated by a recent study of crystalline bulk VTe2, we theoretically investigated the spin-charge-lattice interplay in monolayer VTe2. To understand the controversial experimental reports on several different charge density wave ground states, we paid special attention to the 'hidden' role of antiferromagnetism as its direct experimental detection may be challenging. Our first-principles calculations show that the 4 × 1 charge density wave and the corresponding lattice deformation are accompanied by the 'double-stripe' antiferromagnetic spin order in its ground state. This phase has not only the lowest total energy but also dynamic phonon stability, which supports a group of previous experiments. Interestingly enough, this ground state is stabilized only by assuming the underlying spin order. By noticing this intriguing and previously unknown interplay between magnetism and other degrees of freedom, we further suggest a possible strain engineering. By applying tensile strain, monolayer VTe2 exhibits a phase transition first to a different charge density wave phase and then eventually to a ferromagnetically ordered one.

Metallization of Quantum Material GaTa4Se8 at High Pressure.

Pressure is a unique thermodynamic variable to explore the phase competitions and novel phases inaccessible at ambient conditions. The resistive switching material GaTa4Se8 displays several quantum phases under pressure, such as a Jeff = 3/2 Mott insulator, a correlated quantum magnetic metal, and d-wave topological superconductivity, which has recently drawn considerable interest. Using high-pressure Raman spectroscopy, X-ray diffraction, extended X-ray absorption, transport measurements, and theoretical calculations, we reveal a complex phase diagram for GaTa4Se8 at pressures exceeding 50 GPa. In this previously unattained pressure regime, GaTa4Se8 ranges from a Mott insulator to a metallic phase and exhibits superconducting phases. In contrast to previous studies, we unveil a hidden correlation between the structural distortion and band gap prior to the insulator-to-metal transition, and the metallic phase shows superconductivity with structural and magnetic properties that are distinctive from the lower-pressure phase. These discoveries highlight that GaTa4Se8 is a unique material to probe novel quantum phases from a structural, metallicity, magnetism, and superconductivity perspective.

Origin of ferromagnetism and the effect of doping on Fe3GeTe2.

Recent experimental findings of two dimensional ferromagnetism in Fe3GeTe2, whose critical temperature can reach room temperature by gating, has attracted great research interest. Here we performed elaborate ab initio studies using density functional theory, dynamical mean-field theory and magnetic force response theory. In contrast to the conventional wisdom, it is unambiguously shown that Fe3GeTe2 is not ferromagnetic but is antiferromagnetic, carrying zero net moment in its stoichiometric phase. Fe defect and hole doping are the keys to make this material ferromagnetic as supported by previously disregarded experiments. Furthermore, we found that electron doping also induces the antiferro- to ferro-magnetic transition. It is crucial to understand the notable recent experiments on gate-controlled ferromagnetism. Our results not only reveal the origin of ferromagnetism of this material but also show how it can be manipulated with defects and doping.

Polymorphic Spin, Charge, and Lattice Waves in Vanadium Ditelluride.

Lattice distortion, spin interaction, and dimensional crossover in transition metal dichalcogenides (TMDs) have led to intriguing quantum phases such as charge density waves (CDWs) and 2D magnetism. However, the combined effect of many factors in TMDs, such as spin-orbit, electron-phonon, and electron-electron interactions, stabilizes a single quantum phase at a given temperature and pressure, which restricts original device operations with various quantum phases. Here, nontrivial polymorphic quantum states, CDW phases, are reported in vanadium ditelluride (VTe2 ) at room temperature, which is unique among various CDW systems; the doping concentration determines the formation of either of the two CDW phases in VTe2 at ambient conditions. The two CDW polymorphs show different antiferromagnetic spin orderings in which the vanadium atoms create two different stripe-patterned spin waves. First-principles calculations demonstrate that the magnetic ordering is critically coupled with the corresponding CDW in VTe2 , which suggests a rich phase diagram with polymorphic spin, charge, and lattice waves all coexisting in a solid for new conceptual quantum state-switching device applications.

Direct experimental observation of the molecular J eff = 3/2 ground state in the lacunar spinel GaTa4Se8.

Strong spin-orbit coupling lifts the degeneracy of t 2g orbitals in 5d transition-metal systems, leaving a Kramers doublet and quartet with effective angular momentum of J eff = 1/2 and 3/2, respectively. These spin-orbit entangled states can host exotic quantum phases such as topological Mott state, unconventional superconductivity, and quantum spin liquid. The lacunar spinel GaTa4Se8 was theoretically predicted to form the molecular J eff = 3/2 ground state. Experimental verification of its existence is an important first step to exploring the consequences of the J eff = 3/2 state. Here, we report direct experimental evidence of the J eff = 3/2 state in GaTa4Se8 by means of excitation spectra of resonant inelastic X-ray scattering at the Ta L3 and L2 edges. We find that the excitations involving the J eff = 1/2 molecular orbital are absent only at the Ta L2 edge, manifesting the realization of the molecular J eff = 3/2 ground state in GaTa4Se8.The strong interaction between electron spin and orbital degrees of freedom in 5d oxides can lead to exotic electronic ground states. Here the authors use resonant inelastic X-ray scattering to demonstrate that the theoretically proposed J eff = 3/2 state is realised in GaTa4Se8.